相关论文: Giant optical anisotropy in a single InAs quantum …
We present an optical spectroscopy study of non-polar GaN/AlN quantum dots by time-resolved photoluminescence and by microphotoluminescence. Isolated quantum dots exhibit sharp emission lines, with linewidths in the 0.5-2 meV range due to…
The optical spectroscopy of a single InAs quantum dot doped with a single Mn atom is studied using a model Hamiltonian that includes the exchange interactions between the spins of the quantum dot electron-hole pair, the Mn atom and the…
We study the optical properties of coupled quantum dot-microcavity systems with elliptical cross section. First, we develop an analytic model that describes the spectrum of the cavity modes that are split due to the reduced symmetry of the…
We demonstrate by time-resolved resonance fluorescence measurements on a single self-assembled quantum dot an internal photo-effect that emits electrons from the dot by an intra-band excitation. We find a linear dependence of the optically…
In this work the intersubband electronic properties of two laterally coupled dome-shaped InAs/GaAs quantum dots were investigated. The envelope functions and eigenenergies were calculated as function of distance between the dots. The…
We study experimentally and theoretically polarization-dependent luminescence from an ensemble of quantum-dot-like nanostructures with a very large in-plane shape anisotropy (quantum dashes). We show that the measured degree of linear…
We present the discovery of a large gradual apparent fading event in optical and near-infrared wavelengths in a quasar at z=1.767 by a factor of 20-30 (in optical) over a period of ~20 years in the observed frame. This pronounced fading…
Nanowire (NW)-based opto-electronic devices require certain engineering in the NW geometry to realize polarized-dependent light sources and photodetectors. We present a growth procedure to produce InAs/InP quantum dot-nanowires (QD-NWs)…
We study the quantum-confined Stark effect in single InAs/GaAs quantum dots embedded within a AlGaAs/GaAs/AlGaAs quantum well. By significantly increasing the barrier height we can observe emission from a dot at electric fields of -500…
Photoluminescence spectra of a (001)-Cd0.99Mn0.01Te quantum well were taken with linear-polarization resolution and using an in-plane magnetic field. Because the quantum well contained a two-dimensional electron gas, the spectra consisted…
We present a detailed experimental optical study supported by theoretical modeling of InAs quantum dots (QDs) embedded in an InAlGaAs barrier lattice-matched to InP(001) grown with the use of a ripening step in molecular beam epitaxy. The…
We have studied theoretically the type-II GaAsSb capped InAs quantum dots for two structures differing in the composition of the capping layer, being either (i) constant or (ii) with Sb accumulation above the apex of the dot. We have found…
Deterministically integrating semiconductor quantum emitters with plasmonic nano-devices paves the way towards chip-scale integrable, true nanoscale quantum photonics technologies. For this purpose, stable and bright semiconductor emitters…
We report on the observation of the strong coupling regime between a single GaAs quantum dot and a microdisk optical mode. Photoluminescence is performed at various temperatures to tune the quantum dot exciton with respect to the optical…
We present photoluminescence studies of the molecular neutral biexciton-exciton spectra of individual vertically stacked InAs/GaAs quantum dot pairs. We tune either the hole or the electron levels of the two dots into tunneling resonances.…
Exciton, trion and biexciton dephasing rates are measured within the inhomogeneous distribution of an InAs quantum dot (QD) ensemble using two-dimensional Fourier-transform spectroscopy. The dephasing rate of each excitonic state is similar…
Inelastic (Raman) light scattering intensities for a 42-electron quantum dot under off-resonance conditions and in different spin and angular momentum channels are computed in order to test whether final collective states become the…
We investigate the weak lensing shear due to dark matter galaxy halos whose mass distributions, as projected on the sky, are nearly elliptical. The shear pattern due to these halos is anisotropic about the lens centers and we quantify the…
The design of some optical devices such as semiconductor optical amplifiers for telecommunication applications requires polarization-insensitive optical emission at the long wavelengths (1300-1550 nm). Self-assembled InAs/GaAs quantum dots…
We study the density of states (DOS) in band gaps of ideal and disordered three-dimensional photonic crystals of finite size. The ideal crystal is a diamond lattice of resonant point scatterers (atoms) whereas the disordered one is obtained…