相关论文: The Interaction between PEDOT/PSS Gate and sub-$\m…

Contact resistances often contribute significantly to the overall device resistance in organic field-effect transistors (OFETs). Understanding charge injection at the metal-organic interface is critical to optimizing OFET device…

The performance of solution-processed organic light emitting diodes (OLEDs) is often limited by non-uniform contacts. In this work, we introduce Ni-containing solution-processed metal oxide (MO) interfacial layers inserted between indium…

Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is widely used to build optoelectronic devices. However, as a hygroscopic water-based acidic material, it brings major concerns for stability and degradation, resulting in…

In this work we present an alternative to the use of PEDOT:PSS as hole transport and electron blocking layer in organic photodetectors processed by solution. As PEDOT:PSS is known to be sensitive to humidity, oxygen and UV, removing this…

We investigated the reversible resistive switching of poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) thin films sandwiched between Al electrodes. The J-V sweep curve showed a hysteretic behavior which depends on the…

Schottky barrier field-effect transistors (SBFETs) based on few and mono layer phosphorene are simulated by the non-equilibrium Green's function formalism. It is shown that scaling down the gate oxide thickness results in pronounced…

Organic electrochemical transistors (OECTs) based on Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS) are a benchmark system in organic bioelectronics. In particular, the superior mechanical properties and the…

A wide variation in the charge transport properties of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS) films is attributed to the degree of phase-segregation of the excess insulating polyanion. The results indicate that…

The effect on the resistive switching (RS) mechanism in organic semiconductor (OSC), Poly(3-hexylthiophene-2,5-diyl) (P3HT), due to the presence of the perforated bottom electrode (PBE) is investigated. The simulation shows a high local…

The next generation of soft electronics will expand to the third dimension. This will require the integration of mechanically-compliant three-dimensional functional structures with stretchable materials. This study demonstrates…

A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that…

In this paper, we propose to study the influence of moisture on passive radiofrequency (RF) sensors associated with poly (3,4-ethylenedioxythiophene) polystyrene sulfonate - multi walled carbon nanotubes (PEDOT:PSS-MWCNT) as a sensitive…

Organic light-emitting transistors (OLETs) are multifunctional optoelectronic devices that combine in a single structure the advantages of organic light emitting diodes (OLEDs) and organic field-effect transistors (OFETs). However, low…

In this letter we discuss how the short channel behavior in sub 100 nm channel range can be improved by inducing a step surface potential profile at the back gate of an asymmetrical double gate (DG) Silicon-On-Insulator (SOI)…

The fabrication of hybrid materials consisting of nanoporous hosts with conductive polymers is a challenging task, since the extreme spatial confinement often conflicts with the stringent physico-chemical requirements for polymerization of…

Poly(3,4-ethylenedioxythiophene) : poly(styrene sulfonic acid (PEDOT:PSS), an optically transparent organic semi-conductor, constitutes a suspension of conducting PEDOT:PSS grains, shelled by an insulating layer of PSS. While a percolation…

The development of a spintronics device relies on efficient generation of spin polarized currents and their electric field controlled manipulation. While observation of exceptionally long spin relaxation lengths make graphene an intriguing…

Attractive negative-$U$ interactions between electrons facilitated by strong electron-phonon interaction are common in highly polarizable and disordered materials such as amorphous chalcogenides, but there is no direct evidence for them in…

This study presents Shear Horizontal Surface Acoustic Wave (SH-SAW) sensor based on ink-jet printed poly (3,4-ethylenedioxythiophene) polystyrene sulfonate -- multi wall carbon nanotubes (PEDOT:PSS-MWCNTs) and MWNTs-based inks as sensitive…

Realisation of practical spintronic devices relies on the ability to create and detect pure spin currents. In graphene-based spin valves this is usually achieved by injection of spin-polarized electrons from ferromagnetic contacts via a…