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Dilute magnetic semiconductors, achieved through substitutional doping of spin-polarized transition metals into semiconducting systems, enable experimental modulation of spin dynamics in ways that hold great promise for novel…

We use apertureless scattering near-field optical microscopy (SNOM) to investigate the nanoscale optical response of vanadium dioxide (VO2) thin films through a temperature-induced insulator-to-metal transition (IMT). We compare images of…

介观与纳米尺度物理 · 物理学 2018-10-24 H. T. Stinson , A. Sternbach , O. Najera , R. Jing , A. S. Mcleod , T. V. Slusar , A. Mueller , L. Anderegg , H. T. Kim , M. Rozenberg , D. N. Basov

Using soft x-ray angle-resolved photoemission spectroscopy we probed the bulk electronic structure of Td MoTe2. We found that on-site Coulomb interaction leads to a Lifshitz transition, which is essential for a precise description of the…

We study metal-insulator transitions between Mott insulators and metals. The transition mechanism completely different from the original dynamical mean field theory (DMFT) emerges from a cluster extension of it. A consistent picture…

强关联电子 · 物理学 2007-07-18 Y. Z. Zhang , Masatoshi Imada

We directly trace the near- and mid-infrared transmission change of a VO$_2$ thin film during an ultrafast insulator-to-metal transition triggered by high-field multi-terahertz transients. Non-thermal switching into a metastable metallic…

We investigate the changes in the infrared response due to charge carriers introduced by electrostatic doping of the correlated insulator vanadium dioxide (VO2) integrated in the architecture of the field effect transistor. Accumulation of…

强关联电子 · 物理学 2009-11-13 M. M. Qazilbash , Z. Q. Li , V. Podzorov , M. Brehm , F. Keilmann , B. G. Chae , H. T. Kim , D. N. Basov

Vanadium dioxide is a correlated electron system that features a metal-insulator phase transition (MIT) above room temperature and is of interest in high speed switching devices. Here, we integrate VO2 into two-terminal coplanar waveguides…

材料科学 · 物理学 2013-06-04 Sieu D. Ha , You Zhou , Christopher J. Fisher , Shriram Ramanathan , Jacob P. Treadway

The insulator-to-metal transition (IMT) of the simple binary compound of vanadium dioxide VO$_2$ at $\sim 340$ K has been puzzling since its discovery more than five decades ago. A wide variety of photon and electron probes have been…

The high-pressure behavior of monoclinic VO$_2$ is revisited by a combination of Raman spectroscopy and X-ray diffraction on a single crystal under hydrostatic conditions at room temperature. A soft mode is observed up to P$_c$ = 13.9(1)…

强关联电子 · 物理学 2025-01-14 P. Bouvier , L. Bussmann , D. Machon , I. Breslavetz , G. Garbarino , P. Strobel , V. Dmitriev

Through ${in~situ}$ photoemission spectroscopy, we investigated the change in the electronic and crystal structures of dimensionality-controlled VO$_2$ films coherently grown on TiO$_2$(001) substrates. In the nanostructured films, the…

We explore the momentum-sector-selective metal insulator transitions recently found in the eight - site dynamical cluster approximation to the two-dimensional Hubbard model. The phase diagram in the space of interaction and second-neighbor…

强关联电子 · 物理学 2009-12-04 Emanuel Gull , Olivier Parcollet , Philipp Werner , Andrew J. Millis

The metal insulator transition (MIT) in VO2 has been an important topic for recent years. It has been generally agreed that the mechanism of the MIT in bulk VO2 is considered to be a collaborative Mott-Peierls transition, however the effect…

材料科学 · 物理学 2015-06-09 Salinporn Kittiwatanakul , Stuart A. Wolf , Jiwei Lu

Resistive switching is one of the key phenomena for applications such as nonvolatile memories or neuromorphic computing. V3O5, a compound of the vanadium oxide Magn\'eli series, is one of the rare materials to exhibit an insulator-metal…

The complexity of strongly correlated electron physics in vanadium dioxide is exemplified as its rich phase diagrams of all kinds, which in turn shed light on the mechanisms behind its various phase transitions. In this work, we map out the…

Nitrogen vacancy (NV) centers, optically-active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their excellent quantum coherence and remarkable versatility in a…

介观与纳米尺度物理 · 物理学 2021-04-06 Nathan J. McLaughlin , Yoav Kalcheim , Albert Suceava , Hailong Wang , Ivan K. Schuller , Chunhui Rita Du

Ultrafast photoexcitation is an emerging route to selective control of phase transitions. However, it is difficult to determine which modes govern the transformation and how effectively they are targeted by photoexcitation. This is…

强关联电子 · 物理学 2026-03-06 Shreya Bagchi , Ernest Pastor , José Santiso , Allan S. Johnson , Simon E. Wall

We provide insights into the atomistic details of the ultrafast spatially-resolved breakdown of the insulating M1 phase in bulk VO2 employing an ab initio technique based on time-dependent density-functional theory and dynamical mean-field…

The metal-insulator transition of VO$_2$, which in equilibrium is associated with a structural phase transition, has been intensively studied for decades. In particular, it is challenging to disentangle the role of Mott physics from…

强关联电子 · 物理学 2025-05-16 Jiyu Chen , Francesco Petocchi , Viktor Christiansson , Philipp Werner

Vanadium dioxide (VO2) is one of the most promising materials for developing hybrid photonic integrated devices (PICs). However, despite switching times as low as a few femtoseconds have been reported, the all-optical temporal dynamics of…

We present the first-ever multi-scale dynamical simulation of the temperature-controlled Mott metal-insulator transition in the Hubbard model. By integrating advanced electronic structure method and an efficient Gutzwiller/slave-boson…

强关联电子 · 物理学 2021-02-19 Gia-Wei Chern