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相关论文: Giant spin-orbit splitting in a HgTe quantum well

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An experimental study of Landau levels (LLs) in a system of two-dimensional massless Dirac fermions based on a critical thickness HgTe quantum well has been carried out. The magnetotransport and the capacitive response have been…

介观与纳米尺度物理 · 物理学 2023-10-17 D. A. Kozlov , J. Ziegler , N. N. Mikhailov , Z. D. Kvon , D. Weiss

We present a calculation of the wavevector-dependent subband level splitting from spin-orbit coupling in Si/SiGe quantum wells. We first use the effective-mass approach, where the splittings are parameterized by separating contributions…

介观与纳米尺度物理 · 物理学 2009-08-18 M. Prada , G. Klimeck , R. Joynt

Through magneto-transport measurements and analysis of the observed Shubnikov de Haas oscillations in (010) (AlxGa1-x)2O3/Ga2O3 heterostructures, spin-splitting of the Landau levels in the (010) Ga2O3 two-dimensional electron gas (2DEG) has…

介观与纳米尺度物理 · 物理学 2020-01-08 Adam T. Neal , Yuewei Zhang , Said Elhamri , Siddharth Rajan , Shin Mou

In the present paper we study magneto-intersubband oscillations (MISO) in HgTe/Hg$_{1-x}$Cd$_x$Te single quantum well with "inverted" and "normal" spectra and in conventional In$_{1-x}$Ga$_x$As/In$_{1-y}$Al$_y$As quantum wells with normal…

Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where…

We present high field magneto-transport data from a range of 30nm wide InSb/InAlSb quantum wells. The low temperature carrier mobility of the samples studied ranged from 18.4 to 39.5 m2V-1s-1 with carrier densities between 1.5x1015 and…

介观与纳米尺度物理 · 物理学 2013-05-29 A. M. Gilbertson , W. R. Branford , M. Fearn , L. Buckle , P. D. Buckle , T. Ashley , L. F. Cohen

InSb$_{1-x}$As$_{x}$ is a promising material system for exploration of topological superconductivity in hybrid superconductor/semiconductor devices due to large effective g-factor and enhanced spin-orbit coupling when compared to binary…

介观与纳米尺度物理 · 物理学 2022-07-06 S. Metti , C. Thomas , D. Xiao , M. J. Manfra

Spin-magnetophonon level splitting in a quantum well made of a semimagnetic wide gap semiconductor is considered. The semimagnetic semiconductors are characterized by a large effective $g$ factor. The resonance conditions $\hbar\omega_{\rm…

其他凝聚态物理 · 物理学 2009-11-13 V. L. Gurevich , M. I. Muradov

Magneto-transport measurements of Shubnikov-de Haas (SdH) oscillations have been performed on two-dimensional electron gases (2DEGs) confined in CdTe and CdMnTe quantum wells. The quantum oscillations in CdMnTe, where the 2DEG interacts…

介观与纳米尺度物理 · 物理学 2015-08-19 J. Kunc , B. A. Piot , D. K. Maude , M. Potemski , R. Grill , C. Betthausen , D. Weiss , V. Kolkovsky , G. Karczewski , T. Wojtowicz

There currently is a large effort to explore spin-orbit effects in semiconductor structures with the ultimate goal of manipulating electron spins with gates. A search for materials with large spin-orbit coupling is therefore important. We…

介观与纳米尺度物理 · 物理学 2009-11-10 S. A. Studenikin , P. T. Coleridge , P. Poole , A. Sachrajda

The first study of two-dimensional electron gas in surface layers on HgMnTe with inverted bands is carried out experimentally and theoretically. It is shown that the structure of investigated capacitance magnetooscillations in HgMnTe MOS…

凝聚态物理 · 物理学 2007-05-23 V. F. Radantsev , A. M. Yafyasov , V. B. Bogevolnov , I. M. Ivankiv

Spin-orbit interaction in semiconductor structures with broken space inversion symmetry leads to spin splitting of electron and hole states even in the absence of magnetic field. We discover that, beyond the Rashba and Dresselhaus…

介观与纳米尺度物理 · 物理学 2022-04-20 G. V. Budkin , S. A. Tarasenko

We study theoretically the ultrafast spin dynamics of II-VI diluted magnetic quantum wells in the presence of spin-orbit interaction. We extend a recent study where it was shown that the spin-orbit interaction and the exchange sd coupling…

介观与纳米尺度物理 · 物理学 2015-10-28 Florian Ungar , Moritz Cygorek , Pablo I. Tamborenea , V. Martin Axt

The effective mass, m*, of the electrons confined in high-mobility SiGe/Si/SiGe quantum wells has been measured by the analysis of the temperature dependence of the Shubnikov-de Haas oscillations. In the accessible range of electron…

强关联电子 · 物理学 2014-09-10 M. Yu. Melnikov , A. A. Shashkin , V. T. Dolgopolov , S. V. Kravchenko , S. -H. Huang , C. W. Liu

We observed magnetocapacitance oscillations in InAs/GaSb quantum wells separated by a $20$\,nm AlSb middle barrier. By realizing independent ohmic contacts for electrons in InAs and holes in the GaSb layer, we found an out-of-plane…

介观与纳米尺度物理 · 物理学 2024-04-26 A. S. L. Ribeiro , R. Schott , C. Reichl , W. Dietsche , W. Wegscheider

Transport measurements in inverted InAs/GaSb quantum wells reveal a giant spin-orbit splitting of the energy bands close to the hybridization gap. The splitting results from the interplay of electron-hole mixing and spin-orbit coupling, and…

Spin relaxation of two-dimensional electrons in asymmetrical (001) AlGaAs quantum wells are measured by means of Hanle effect. Three different spin relaxation times for spins oriented along [110], [1-10] and [001] crystallographic…

介观与纳米尺度物理 · 物理学 2015-06-25 N. S. Averkiev , L. E. Golub , A. S. Gurevich , V. P. Evtikhiev , V. P. Kochereshko , A. V. Platonov , A. S. Shkolnik , Yu. P. Efimov

A Rashba type spin-orbit splitting is found for quantum well states formed in ultrathin Pb films on Si(111). The resulting momentum splitting is comparable to what is found for semiconductor heterostructures. The splitting shows no coverage…

其他凝聚态物理 · 物理学 2009-07-01 Hugo Dil , Fabian Meier , Jorge Lobo-Checa , Luc Patthey , Gustav Bihlmayer , Juerg Osterwalder

We present both the experimental and theoretical investigation of a non-trivial electron Landau levels shift in magnetic field in wide ~20 nm HgTe quantum wells: Landau levels split under magnetic fields but become degenerate again when…

介观与纳米尺度物理 · 物理学 2018-10-17 A. A. Dobretsova , A. D. Chepelianskii , N. N. Mikhailov , Z. D. Kvon

Recent experiments in the two dimensional electron systems in silicon MOSFETs have shown that the in-plane magnetic field $H_{sat}$ required to saturate the conductivity to its high-field value and the magnetic field $H_s$ needed to…

强关联电子 · 物理学 2009-11-07 S. A. Vitkalov , M. P. Sarachik , T. M. Klapwijk