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Domain walls in antiferromagnets under a spin-polarized current present dynamical behavior that is not observed in ferromagnets, and it is tunable by the current polarization. Precessional dynamics is obtained for perpendicular spin…

Domain walls in ferroelectrics exhibit a plethora of phases and functionalities not found in the bulk. The interplay of electrostatic, chemical, topological, and distortive inhomogeneities at the walls can be so complex, however, that this…

We investigated domain kinetics by measuring the polarization switching behaviors of polycrystalline Pb(Zr,Ti)O$_{3}$ films, which are widely used in ferroelectric memory devices. Their switching behaviors at various electric fields and…

Many ferroelastic crystals display at sufficiently low measurement frequencies a huge elastic softening below Tc which is caused by domain wall motion. Materials range from perovskites to iron based superconductors and shape memory…

We study dipolar bosons in a 1D optical lattice and identify a region in parameter space---strong coupling but relatively weak on-site repulsion---hosting a series of stable charge-density-wave (CDW) states whose low-energy excitations,…

Current-driven domain wall (DW) motion in magnetic wires with asymmetric notches was investigated by means of magnetic force microscopy. It was found that the critical current density necessary for the current-driven DW motion depended on…

Directed motion of domain walls (DWs) in a classical biaxial ferromagnet placed under the influence of periodic unbiased external magnetic fields is investigated. Using the symmetry approach developed in this article the necessary…

Domain wall motion in magnetic materiel induces the negative susceptibility leading to a perfect diamagnetism state. The local susceptibility is calculated by the derivative of magnetization ($\vec{M}$) vector w.r.t. magnetic field strength…

Transmission probability of a domain wall through a magnetic nanowire is investigated as a function of the external magnetic field. Very intriguing phenomenon is found that the transmission probability shows a significant drop after…

We report the results of experimental investigations of controlled domain wall (DW) pinning in a ferromagnetic nanowire (NW) by stray fields of two uniformly magnetized bistable ferromagnetic nanoparticles (NPs) placed on either side of the…

Domain wall dynamics in ferroic materials underpins functionality of data storage and information technology devices. Using localized electric field of a scanning probe microscopy tip, we experimentally demonstrate a surprisingly rich range…

Ferroelectric domain walls are a rich source of emergent electronic properties and unusual polar order. Recent studies showed that the configuration of ferroelectric walls can go well beyond the conventional Ising-type structure. N\'eel-,…

Prediction of properties from composition is a fundamental goal of materials science and can greatly accelerate development of functional materials. It is particularly relevant for ferroelectric perovskite solid solutions where…

The influence of gate voltage, temperature and magnetic field on domain wall (DW) creep dynamics is investigated in Pt/Co/GdOx films with perpendicular magnetic anisotropy and imaged by a scanning magneto-optical Kerr effect technique. The…

Domain walls (DWs), the two-dimensional boundaries between symmetry equivalent ferroic domains, are actively investigated due to their promise for novel logic and memory devices. Moreover, they can be easily created, erased and reshaped at…

We report the nanoscale electrical imaging results in hexagonal $Lu_{0.6}Sc_{0.4}FeO_3$ single crystals using conductive atomic force microscopy (C-AFM) and scanning microwave impedance microscopy (MIM). While the dc and ac response of the…

We study resistivity temperature dependence of a three dimensional metamagnet near the metamagnet phase transition point in the case when magnetic structure tends to split into regions with high and low magnetization. We show that in the…

It is theoretically demonstrated that a displacement of a pinned domain wall, typically of order of $\mu$m, can be driven by use of an ac current which is below threshold value. The point here is that finite motion around the pinning center…

Domains walls and topological defects in ferroelectric materials have emerged as a powerful new paradigm for functional electronic devices including memory and logic. Similarly, wall interactions and dynamics underpin a broad range of…

The interaction between bulk and dynamic domain wall in the presence of a linear / non-linear electromagnetism make energy density, tension and pressure on the wall all variables, depending on the wall position. In [1] this fact seems to be…