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相关论文: A possible scenario of metallization in boron dope…

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Motivated by the discovery of superconductivity in boron-doped (B-doped) diamond, we investigate the localization and superconductivity in heavily doped semiconductors. The competition between Anderson localization and s-wave…

超导电性 · 物理学 2009-11-13 Youichi Yanase , Naoyuki Yorozu

Superconductivity in an uncompensated boron doped diamond, a very recent observation, is strikingly close to an earlier observation of Anderson-Mott insulator to metal transition, prompting us to suggest an electron correlation driven…

强关联电子 · 物理学 2007-05-23 G. Baskaran

We study within a first-principle approach the band structure, vibrational modes and electron-phonon coupling in boron, aluminum and phosphorus doped silicon in the diamond phase. Our results provide evidences that the recently discovered…

超导电性 · 物理学 2007-05-23 E. Bourgeois , X. Blase

We present an {\it ab initio} study of the recently discovered superconductivity of boron doped diamond within the framework of a phonon-mediated pairing mechanism. The role of the dopant, in substitutional position, is unconventional in…

超导电性 · 物理学 2009-11-10 Xavier Blase , Ch Adessi , Damien Connetable

The density of states and the band diagrams were computed for diamond, cubic boron nitrde (cBN), and hexagonal boron nitride (hBN) using a Korringa-Kohn-Rostoker (KKR) scheme to investigate the shift of the Fermi level by impurity-atom…

材料科学 · 物理学 2014-12-11 Koji Kobashi

We report a numerical analysis of Anderson localization in a model of a doped semiconductor. The model incorporates the disorder arising from the random spatial distribution of the donor impurities and takes account of the electron-electron…

材料科学 · 物理学 2015-06-04 Yosuke Harashima , Keith Slevin

To be practical, semiconductors need to be doped. Sometimes, to nearly degenerate levels, e.g. in applications such as thermoelectric, transparent electronics or power electronics. However, many materials with finite band gaps are not…

Superconductivity of boron-doped diamond, reported recently at T_c=4 K, is investigated exploiting its electronic and vibrational analogies to MgB2. The deformation potential of the hole states arising from the C-C bond stretch mode is 60%…

超导电性 · 物理学 2007-05-23 K. -W. Lee , W. E. Pickett

We study the concentration dependence of the superconducting critical temperature Tc in a boron-doped diamond. We evaluate the density of states at Fermi level within the dynamical cluster approximation obtaining higher values than from the…

超导电性 · 物理学 2010-09-01 Břetislav Šopík

We apply local orbital basis density functional theory (using SIESTA) coupled with a mapping to the Anderson impurity model to estimate the Coulomb assisted or correlated hybridization between transition metal d-orbitals and ligand…

强关联电子 · 物理学 2009-11-11 A. Huebsch , J. C. Lin , J. Pan , D. L. Cox

We consider superconductivity in boron (B) doped diamond using a simplified model for the valence band of diamond. We treat the effects of substitutional disorder of B ions by the coherent potential approximation (CPA) and those of the…

超导电性 · 物理学 2015-06-25 T. Shirakawa , S. Horiuchi , Y. Ohta , H. Fukuyama

Discovery of superconductivity in the impurity band formed by heavy doping of boron into diamond (C:B) as well as doping of boron into silicon (Si:B) has provided a rout for the possibility of new families of superconducting materials.…

强关联电子 · 物理学 2011-01-28 H. Hassanian Arefi , S. A. Jafari , M. R. Abolhassani

Strongly correlated fermions in a crystal or in an optical lattice in the presence of binary alloy disorder are investigated. We employ the statistical dynamical mean-field theory, which incorporates both, local fluctuations due to disorder…

无序系统与神经网络 · 物理学 2010-09-15 Denis Semmler , Krzysztof Byczuk , Walter Hofstetter

Owing to extremely large band gap of 5.5 eV and high thermal conductivity, diamond is recognized as the most important semiconductor. The superconductivity of polycrystalline diamond has always been reported, but there are also many…

超导电性 · 物理学 2024-03-04 Shisheng Lin , Xutao Yu , Minhui Yang , Huikai Zhong , Jiarui Guo

The discoveries of superconductivity in heavily boron-doped diamond (C:B) in 2004 and silicon (Si:B) in 2006 renew the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a…

超导电性 · 物理学 2009-11-13 M. Kriener , T. Muranaka , J. Kato , Z. A. Ren , J. Akimitsu , Y. Maeno

Different phases of solid boron under high pressure are studied by first principles calculations. The $\alpha$-B$_{12}$ structure is found to be stable up to 270 GPa. Its semiconductor band gap (1.72 eV) decreases continuously to zero…

材料科学 · 物理学 2009-11-07 Jijun Zhao , Jian Ping Lu

Comparison of periodic B dopants with a random alloy of substitional boron in diamond is carried out using several supercells and the coherent potential approximation (CPA) for the random alloy case. The main peak in the B local density of…

超导电性 · 物理学 2007-05-23 K. -W. Lee , W. E. Pickett

The electronic structure, lattice dynamics, and electron-phonon coupling of the boron-doped diamond are investigated using the density functional supercell method. Our results indicate the boron-doped diamond is a phonon mediated…

超导电性 · 物理学 2007-05-23 H. J. Xiang , Zhenyu Li , Jinlong Yang , J. G. Hou , Qingshi Zhu

We present {\it ab initio} and self-consistent tight-binding calculations on the band structure of single wall semiconducting carbon nanotubes with high degrees (up to 25 %) of boron substitution. Besides a lowering of the Fermi energy into…

材料科学 · 物理学 2009-11-10 Ludger Wirtz , Angel Rubio

We study the three-dimensional two-band Anderson model of localization and compare our results to experimental results for amorphous metallic alloys (AMA). Using the transfer-matrix method, we identify and characterize the metal-insulator…

无序系统与神经网络 · 物理学 2009-11-10 I V Plyushchay , R A Roemer , M Schreiber
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