相关论文: Single-electron Tunneling with Strong Mechanical F…
Quantum noise with exchange and tunneling is studied within time-dependent wave packets. A novel expression for the quantum noise of two identical particles injected simultaneously from opposite sides of a tunneling barrier is presented.…
By first lithographically fabricating contact electrodes and then as last step growing carbon nanotubes with chemical vapour deposition across the ready-made chip, many potential contamination mechanisms for nanotube devices can be avoided.…
Noise-induced switching between coexisting metastable states occurs in a wide range of far-from-equilibrium systems including micro-mechanical oscillators, epidemiological and climate change models, and nonlinear electronic transport in…
We consider nanojunctions in the single-electron tunnelling regime which, due to a high degree of spatial symmetry, have a degenerate many body spectrum. As a consequence, interference phenomena which cause a current blocking can occur at…
We consider a combined nanomechanical-supercondcuting device that allows the Cooper pair tunneling to interfere with the mechanical motion of the middle superconducting island. Coupling of mechanical oscillations of a superconducting island…
We study non-Gaussian out-of-equilibrium current fluctuations in a mesoscopic NSN circuit at the point of a superconducting phase transition. The setup consists of a voltage-biased thin film nanobridge superconductor (S) connected to two…
We present an analytical solution of the single photon quantum feedback in a cavity quantum electrodynamics system based on a half cavity set-up coupled to a structured continuum. The exact analytical expression we obtain allows us to…
Effects of the electron-electron interaction on tunneling into a metal in ultra-high magnetic field (ultra-quantum limit) are studied. The range of the interaction is found to have a decisive effect both on the nature of the field-induced…
We present a systematic study on low-frequency current fluctuations of nano-devices consisting of one single semiconducting nanotube, which exhibit significant 1/f-type noise. By examining devices with different switching mechanisms,…
We study electron mechanical coupling in a suspended carbon nanotube (CNT) quantum dot device. Electron spin couples to the flexural vibration mode due to spin-orbit coupling in the electron tunneling processes. In the weak coupling limit,…
We experimentally characterise the impedance of a single electron transistor (SET) at an excitation frequency comparable to the electron tunnel rate. Differently from usual rf-SET operations, the excitation signal is applied to the gate of…
Stochastic resonance is a phenomenon in which fluctuations enhance an otherwise weak signal. It has been found in many different systems in paleoclimatology, biology, medicine, and physics. The classical stochastic resonance due to thermal…
Suspended carbon nanotubes are known to support self-driven oscillations due to electromechanical feedback under certain conditions, including low temperatures and high mechanical quality factors. Prior reports identified signatures of such…
Switching of the direction of the magnetic moment in a nanomagnet is studied within a modified Slonczewski's model that permits torsional oscillations of the magnet. We show that the latter may inhibit or assist the magnetization switching,…
We report an approach to improving the performance of spin torque nano-oscillators (STNOs) that utilizes power-dependent negative feedback to achieve a significantly enhanced dynamic damping. In combination with a sufficiently slow…
The influence of a quantizing magnetic field $H$ to the conductance of a tunnel point contact in the presence of the single defect has been considered. We demonstrate that the conductance exhibits specific magneto-quantum oscillations, the…
We consider the conductance of a one-dimensional wire interrupted by a double-barrier structure allowing for a resonant level. Using the electron-electron interaction strength as a small parameter, we are able to build a non-perturbative…
Despite their ubiquity in nanoscale electronic devices, the physics of tunnel barriers has not been developed to the extent necessary for the engineering of devices in the few-electron regime. This problem is of urgent interest, as this is…
We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The device structures used consist of a semiconducting Si…
We carry out experiments on single-molecule junctions at low temperatures, using the mechanically controlled break junction technique. Analyzing the results received with more than ten different molecules the nature of the first peak in the…