相关论文: Effect of inter-wall surface roughness correlation…
Monolayer fluctuations in the thickness of a semiconductor quantum well (QW) lead to three types of excitons, located in the narrower, average and thicker regions of the QW, which are clearly resolved in optical spectra. Whether or not…
Considering effects of electric field on the low temperature absorption line of quantum well excitons, we show that, for moderate strength of the electric field, the main contribution to the field dependence of the line-width results from…
The theory of the linear optical response of excitons in quantum wells and polaritons in planar semiconductor microcavities is reviewed, in the light of the existing experiments. For quantum well excitons, it is shown that disorder mainly…
Variations in the width of a quantum well (QW) are known to be a source of broadening of the exciton line. Using low temperature near-field optical microscopy, we have exploited the dependence of exciton energy on well-width to show that in…
The effective Hamiltonian for two dimensional quantum wells with rough interfaces is formally derived. Two new terms are generated. The first term is identified to the local energy level fluctuations, which was introduced phenomenologically…
The lineshape of the tunneling conductance in double quantum wells with a large-scale roughness of heterointerfaces is investigated. Large-scale variations of coupled energy levels and scattering due to the short-range potential are taken…
The reflection spectrum of a multiple quantum well structure with an inserted defect well is considered. The defect is characterized by the exciton frequency different from that of the host's wells. It is shown that for relatively short…
In this work we present a detailed analysis of the interplay of Coulomb effects and different mechanisms that can lead to carrier localization effects in c-plane InGaN/GaN quantum wells. As mechanisms for carrier localization we consider…
At low temperatures, indirect excitons formed at the in-plane electron-hole interface in a coupled quantum well structure undergo a spontaneous transition into a spatially modulated state. We report on the control of the instability…
Scattering processes by the interface roughness in a quantum well in a quantizing magnetic field are considered. An expression for the scattering rate is derived for a magnetic field tilted relative to the quantum well layers. By analyzing…
We calculate the intersubband absorption linewidth in quantum wells (QWs) due to scattering by interface roughness, LO phonons, LA phonons, alloy disorder, and ionized impurities, and compare it with the transport energy broadening that…
We study an asymmetric double InGaAs quantum well using optical two-dimensional coherent spectroscopy. The collection of zero-quantum, one-quantum, and two-quantum two-dimensional spectra provides a unique and comprehensive picture of the…
We evaluate the effect of diffraction-limited resolution of the optical system on the estimates of the coherence length of 2D excitons deduced from the interferometric study of the exciton emission. The results are applied for refining our…
A microscopic calculation of the perpendicular current in doped multiple quantum wells is presented. Interface roughness is shown to affect the resonant transitions as well as to cause a nonresonant background current. The theoretical…
Resonance dielectric response of excitons is studied for the high-quality GaAs/InGaAs heterostructures with wide asymmetric quantum wells (QWs). To highlight effects of the QW asymmetry, we have grown and studied several heterostructures…
Recent discoveries have spurred the theoretical prediction and experimental realization of novel materials that have topological properties arising from band inversion. Such topological insulators are insulating in the bulk but have…
Frequency dependencies of optical characteristics (reflection, transmission and absorption of light) of a quantum well are investigated in a vicinity of interband resonant transitions in a case of two closely located excited energy levels.…
An approach is proposed to determine parameters of homogeneous and inhomogeneous broadening for reflection lines of quasi-two-dimensional excitons in semiconductor quantum well structures. A phenomenological model is developed taking into…
We have derived and analyzed the wavefunctions and energy states for an asymmetric double quantum wells, broadened due to static interface disorder effects, within well known discreet variable representation approach for solving the…
A transition between the strong (coherent) and weak (incoherent) coupling limits of resonant interaction between quantum well (QW) excitons and bulk photons is analyzed and quantified as a function of the incoherent damping rate caused by…