相关论文: Dissipation and Tunnelling in Quantum Hall Bilayer…
In a bilayer system consisting of a composite-fermion Fermi sea in each layer, the tunnel current is exponentially suppressed at zero bias, followed by a strong peak at a finite bias voltage $V_{\rm max}$. This behavior, which is…
We revisit the physics of electron gas bilayers in the quantum Hall regime [Nature, 432 (2004) 691; Science, 305 (2004) 950], where transport and tunneling measurements provided evidence of a superfluid phase being present in the system.…
We calculate the tunneling current for a bilayer quantum Hall system in the interlayer incoherent regime. In order to capture the strong correlation effects we model the layers as two Wigner crystals coupled through interlayer Coulomb…
Electron tunneling between quantum Hall systems on the same two dimensional plane separated by a narrow barrier is studied. We show that in the limit where inelastic scattering time is much longer than the tunneling time, which can be…
Transport properties of bilayer quantum Hall systems at $\nu=1/q$, where $q$ is an odd integer, are investigated. The edge theory is used for the investigation, since tunneling between the two layers is assumed to occur on the edge of the…
The counterflow transport in quantum Hall bilayers provided by superfluid excitons is locked at small input currents due to a complete leakage caused by the interlayer tunneling. We show that the counterflow critical current I_c^{CF} above…
A new manifestation of interlayer coherence in strongly polarized double layer quantum Hall systems with total filling factor $\nu=1$ in the presence of a small or zero tunneling is theoretically predicted. It is shown that moving (for…
We study dephasing in electron transport through a large quantum dot (a Fabry-Perot interferometer) in the fractional quantum Hall regime with filling factor $2/3$. In the regime of sequential tunneling, dephasing occurs due to electron…
Tunneling spectroscopy reveals evidence for interlayer electron-hole correlations in quantum Hall bilayer two-dimensional electron systems at layer separations near, but above, the transition to the incompressible exciton condensate at…
A theoretical calculation is presented of current noise which is due charge fractionalization, in two interacting edge channels in the integer quantum Hall state at filling factor $\nu=2$. Because of the capacitive coupling between the…
The problem of tunneling control in systems "quantum dot - quantum well" (as well as "quantum dot - quantum dot" or quantum molecule) and "quantum dot - bulk contact" is studied as a quantum tunneling with dissipation process in the…
Applying a technique developed recently [1,2] for an harmonic oscillator coupled to a bath of harmonic oscillators, we present an exact solution for the tunneling problem in an Ohmic dissipative system with inverted harmonic potential. The…
A theory of transport in the quantum Hall regime is developed for separately contacted double-layer electron systems. Inter-layer tunneling provides a channel for equilibration of the distribution functions in the two layers at the edge…
In the weak backscattering limit, point contact tunneling between quantum Hall edges is well described by a Poissonian process where Laughlin quasiparticles tunnel independently, leading to the unambiguous measurement of their fractional…
The quantum dissipative dynamics of a tunneling process through double barrier structures is investigated on the basis of a rigorous treatment for the first time. We employ a Caldeira-Leggett Hamiltonian with an effective potential…
Usually one finds that dissipation tends to make a quantum system more classical in nature. In this paper we study the effect of momentum dissipation on a quantum system. The momentum of the particle is coupled bilinearly to the momenta of…
Remarkable nonlinearities in the differential tunneling conductance between fractional quantum Hall edge states at a constriction are observed in the weak-backscattering regime. In the $\nu $ = 1/3 state a peak develops as temperature is…
We present a new theoretical approach for the integer quantum Hall effect, which is able to describe the inter-plateau transitions as well as the transition to the Hall insulator. We find two regimes (metallic and insulator like) of the top…
The effect of tunneling on the transport properties of} quantum Hall double layers in the regime of the excitonic condensate at total filling factor one is studied in counterflow experiments. If the tunnel current $I$ is smaller than a…
We find that mesoscopic conductance fluctuations in the quantum Hall regime in silicon MOSFETs display simple and striking patterns. The fluctuations fall into distinct groups which move along lines parallel to loci of integer filling…