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Semiconductor nanowires (NWs) have a broad range of applications for nano- and optoelectronics. The strain field of gallium nitride (GaN) NWs could be significantly changed when contacts are applied to them to form a final device,…

This work analyzes the emission and radiation properties of a single optical emitter embedded in a graphene-coated subwavelength wire. We discuss the modifications of the spontaneous emission rate and the radiation efficiency as a function…

光学 · 物理学 2017-08-23 Mauro Cuevas

The bias-dependent transport properties of short poly(G)-poly(C) A-DNA strands attached to Au electrodes are investigated with first principles electronic transport methods. By using the non- equilibrium Green's function approach combined…

介观与纳米尺度物理 · 物理学 2015-05-19 C. D. Pemmaraju , I. Rungger , X. Chen , A. R. Rocha , S. Sanvito

The dependence of electron transfer rates and yields in bridged molecular systems on the bridge length, and the dependence of the zero-bias conduction of molecular wires on wire length are discussed. Both phenomena are controlled by…

化学物理 · 物理学 2007-05-23 Spiros Skourtis , Abraham Nitzan

Silicon can be heavily doped with phosphorus in a single atomic layer (a $\delta$ layer), significantly altering the electronic structure of the conduction bands within the material. Recent progress has also made it possible to further dope…

材料科学 · 物理学 2026-02-26 Quinn T. Campbell , Andrew D. Baczewski , Shashank Misra , Evan M. Anderson

Acceptor and donor doping is a standard for tailoring semiconductors. More recently, doping was adapted to optimize the behavior at ferroelectric domain walls. In contrast to more than a century of research on semiconductors, the impact of…

The future of spintronic and semiconductor applications demands materials with tailored electronic and magnetic properties. This study uses density functional theory to investigate the electronic structure of the half-metallic compound…

材料科学 · 物理学 2025-07-08 Sujoy Datta , Prashant Singh

We performed detailed conductivity and tunneling mesurements on the amorphous, magnetically doped material $\alpha$-Gd$_x$Si$_{1-x}$ (GdSi), which can be driven through the metal-insulator transition by the application of an external…

强关联电子 · 物理学 2009-11-10 L. Bokacheva , W. Teizer , F. Hellman , R. C. Dynes

The electronic property of NiFe$_2$O$_4$ nanowire device is investigated through nonequilibrium Green's functions (NEGF) in combination with density functional theory (DFT). The electronic transport properties of NiFe$_2$O$_4$ nanowire are…

介观与纳米尺度物理 · 物理学 2017-07-03 V. Nagarajan , R. Chandiramouli

Ionic transport in nanopores or nanochannels is key to many cellular processes and is now being explored as a method for DNA/polymer sequencing and detection. Although apparently simple in its scope, the study of ionic dynamics in confined…

介观与纳米尺度物理 · 物理学 2013-06-13 Andrew Meyertholen , Massimiliano Di Ventra

Long, stable and free-standing linear atomic carbon wires have been carved out from graphene recently [Meyer et al: Nature (London) 2008, 454, 319; Jin et al: Phys: Rev: Lett: 2009, 102, 205501]. They can be considered as the extremely…

原子与分子团簇 · 物理学 2010-10-28 L. Shen , M. G. Zeng , S. W. Yang , C. Zhang , X. F. Wang , Y. P. Feng

We study the effects of disorder in the electronic properties of graphene multilayers, with special focus on the bilayer and the infinite stack. At low energies and long wavelengths, the electronic self-energies and density of states…

强关联电子 · 物理学 2013-05-29 Johan Nilsson , A. H. Castro Neto , F. Guinea , N. M. R. Peres

Over the last decade, progress in wide bandgap, III-V materials systems based on gallium nitride (GaN) has been a major driver in the realization of high power and high frequency electronic devices. Since the highly conductive,…

Metal nanowires exhibit a number of interesting properties: their electrical conductance is quantized, their shot-noise is suppressed by the Pauli principle, and they are remarkably strong and stable. We show that many of these properties…

介观与纳米尺度物理 · 物理学 2015-06-24 C. A. Stafford

We present a rigorous and computationally efficient method to do a parameter-free analysis of molecular wires connected to contacts. The self-consistent field approach is coupled with Non-equilibrium Green's Function (NEGF) formalism to…

介观与纳米尺度物理 · 物理学 2016-08-31 Prashant Damle , Avik W. Ghosh , Supriyo Datta

Despite the importance of Si:P delta-doped wires for modern nanoelectronics, there are currently no computational models of electron transport in these devices. In this paper we present a nonequilibrium Green's function model for electronic…

介观与纳米尺度物理 · 物理学 2016-01-20 J. S. Smith , D. W. Drumm , A. Budi , J. A. Vaitkus , J. H. Cole , S. P. Russo

Molecular wires with high electrical conductance are desirable components for future molecular-scale circuitry. However, their conductance typically decays exponentially with increasing length. Here, we report a novel discovery that the…

介观与纳米尺度物理 · 物理学 2024-10-08 Famin Yu , Rui-Qin Zhang , Zhigang Wang

We present first principles calculations of current-voltage characteristics (IVC) and conductance of Au(111):S2-cumulene-S2:Au(111) molecular wire junctions with realistic contacts. The transport properties are calculated using full…

介观与纳米尺度物理 · 物理学 2010-09-30 J. Prasongkit , A. Grigoriev , G. Wendin , Rajeev Ahuja

Ballistic semiconductor structures have allowed the realization of optics-like phenomena in electronics, including magnetic focusing and lensing. An extension that appears unique to graphene is to use both n and p carrier types to create…

介观与纳米尺度物理 · 物理学 2011-04-27 J. R. Williams , Tony Low , M. S. Lundstrom , C. M. Marcus

Graphene nanomeshes (GNMs), formed by creating a superlattice of pores in graphene, possess rich physical and chemical properties. Many of these properties are determined by the pore geometry. In this work, we use first principles…

材料科学 · 物理学 2016-12-06 Mohamed M. Fadlallah , Ahmed A. Maarouf , Udo Schwingenschlögl , Ulrich Eckern