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相关论文: Semiquantitative theory of electronic Raman scatte…

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We present theoretical results concerning inelastic light (Raman) scattering from semiconductor quantum dots. The characteristics of each dot state (whether it is a collective or single-particle excitation, its multipolarity, and its spin)…

介观与纳米尺度物理 · 物理学 2009-11-11 Alain Delgado , Augusto Gonzalez , David J. Lockwood

We investigate the electronic Raman scattering in pure, quasi-one dimensional conductors with density wave ground state. In particular, we develop the theory of light-scattering on spin and charge density waves, both conventional and…

强关联电子 · 物理学 2009-11-10 András Ványolos , Attila Virosztek

A theory of resonant Raman scattering spectroscopy of one dimensional electronic systems is developed on the assumptions that (i) the excitations of the one dimensional electronic system are described by the Luttinger Liquid model, (ii)…

强关联电子 · 物理学 2016-08-31 D. -W. Wang , A. J. Millis , S. Das Sarma

In this paper, we review recent development in the theory of resonant inelastic light (Raman) scattering in one-dimensional electron systems. The particular systems we have in mind are electron doped GaAs based semiconductor quantum wire…

强关联电子 · 物理学 2009-11-10 D. -W. Wang , A. J. Millis , S. Das Sarma

A theoretical model of resonant hyper-Raman scattering by an ensemble of spherical semiconductor quantum dots has been developed. The electronic intermediate states are described as Wannier-Mott excitons in the framework of the envelope…

介观与纳米尺度物理 · 物理学 2009-10-31 E. Menendez-Proupin , C. Trallero-Giner , A. Garcia-Cristobal

A consistent calculation of resonant inelastic (Raman) scattering amplitudes for relatively large quantum dots, which takes account of valence-band mixing, discrete character of the spectrum in intermediate and final states, and…

介观与纳米尺度物理 · 物理学 2009-11-10 Alain Delgado , Augusto Gonzalez

Resonant Raman scattering in semiconductor quantum dots with spherical shape is theoretically investigated. The Frohlich-like interaction between electronic states and optical vibrations has been considered. The Raman profiles are studied…

凝聚态物理 · 物理学 2009-10-31 E. Menendez-Proupin , J. L. Pena , C. Trallero-Giner

We develop a generic theory for the resonant inelastic light (Raman) scattering by a conduction band quantum plasma taking into account the presence of the filled valence band in doped semiconductor nanostructures within a generalized…

强关联电子 · 物理学 2009-11-07 Daw-Wei Wang , S. Das Sarma

We explain quantitatively why resonant Raman scattering spectroscopy, an extensively used experimental tool in studying elementary electronic excitations in doped low dimensional semiconductor nanostructures, always produces an observable…

强关联电子 · 物理学 2009-10-31 S. Das Sarma , Daw-Wei Wang

The theory of Raman scattering by the electron--phonon coupled system in metals and heavily doped semiconductors is developed taking into account the Coulomb screening and the electron--phonon deformation interaction. The Boltzmann equation…

材料科学 · 物理学 2009-11-10 L. Falkovsky

Electron Raman scattering (ERS) is investigated in a parabolic semiconductor quantum wire in a transverse magnetic field neglecting by phonon-assisted transitions. The ERS cross-section is calculated as a function of a frequency shift and…

介观与纳米尺度物理 · 物理学 2009-11-10 F. M. Hashimzade , T. G. Ismailov , B. H. Mehdiyev , S. T. Pavlov

Resonant inelastic (Raman) light scattering off neutral GaAs quantum dots which contain a mean number, N=42, of electron-hole pairs is computed. We find Raman amplitudes corresponding to strongly collective final states (charge-density…

介观与纳米尺度物理 · 物理学 2009-11-07 Alain Delgado , Augusto Gonzalez , Eduardo Menendez-Proupin

In the paper, we present theoretical calculations of the cross section for inelastic light scattering by electronic excitations in a quantum dot charged with 42 electrons. The many-electron states involved in the computations are obtained…

介观与纳米尺度物理 · 物理学 2008-07-10 Alain Delgado , Augusto Gonzalez , D. J. Lockwood

A theory of electronic Raman scattering in nearly antiferromagnetic Fermi liquids is constructed using the phenomenological electron-electron interaction introduced by Millis, Monien, and Pines. The role of "hot spots" and their resulting…

强关联电子 · 物理学 2009-10-30 T. P. Devereaux , A. P. Kampf

Inelastic (Raman) light scattering intensities for a 42-electron quantum dot under off-resonance conditions and in different spin and angular momentum channels are computed in order to test whether final collective states become the…

介观与纳米尺度物理 · 物理学 2009-11-10 Augusto Gonzalez , Alain Delgado

A theory of electronic Raman scattering in the presence of several energy bands crossing the Fermi surface is developed. The contributions to the light scattering cross section are calculated for each band and it is shown that the cross…

凝聚态物理 · 物理学 2009-10-28 T. P. Devereaux , A. Virosztek , A. Zawadowski

We treat resonant Raman scattering via the multiphonon exciton transitions in cylindrical quantum dots with a parabolic confinement in the lateral direction and with a finite rectangular interface-barrier confinement in the axial direction.…

介观与纳米尺度物理 · 物理学 2012-05-09 S. N. Klimin , V. M. Fomin , J. T. Devreese , J. -P. Leburton

A set of theoretical results on infrared absorption and inelastic (Raman) scattering of light in semiconductor quantum dots is reviewed. When it is possible, qualitative comparisons with recent experimental results are presented.

介观与纳米尺度物理 · 物理学 2007-05-23 Augusto Gonzalez , Alain Delgado

The theory of elastic light scattering by semiconductor quantum dots is suggested. The semiclassical method, applying retarded potentials to avoid the problem of bounder conditions for electric and magnetic field, is used. The exact results…

介观与纳米尺度物理 · 物理学 2007-05-23 I. G. Lang , L. I. Korovin , S. T. Pavlov

A theory for electronic Raman scattering in the cuprate superconductors is presented with a specific emphasis on the polarization dependence of the spectra which can infer the symmetry of the energy gap. Signatures of the effects of…

超导电性 · 物理学 2009-10-30 T. P. Devereaux , A. P. Kampf
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