Electronic Raman scattering in quantum dots revisited
Mesoscale and Nanoscale Physics
2009-11-11 v1
Abstract
We present theoretical results concerning inelastic light (Raman) scattering from semiconductor quantum dots. The characteristics of each dot state (whether it is a collective or single-particle excitation, its multipolarity, and its spin) are determined independently of the Raman spectrum, in such a way that common beliefs used for level assignments in experimental spectra can be tested. We explore the usefulness of below band gap excitation and an external magnetic field to identify charge and spin excited states of a collective or single-particle nature.
Cite
@article{arxiv.cond-mat/0505658,
title = {Electronic Raman scattering in quantum dots revisited},
author = {Alain Delgado and Augusto Gonzalez and David J. Lockwood},
journal= {arXiv preprint arXiv:cond-mat/0505658},
year = {2009}
}
Comments
To appear in a special issue of Solid State Communications dedicated to Eli Burstein