Exciton and confinement potential effects on the resonant Raman scattering in quantum dots
Abstract
Resonant Raman scattering in semiconductor quantum dots with spherical shape is theoretically investigated. The Frohlich-like interaction between electronic states and optical vibrations has been considered. The Raman profiles are studied for the following intermediate electronic state models: (I) Uncorrelated electron-hole pairs in the strong size quantized regime, (II) Wannier-Mott excitons in an infinite potential well, and (III) Excitons in a finite confinement barrier. It is shown that the finite confinement barrier height and the electron-hole correlation determine the absolutes values of the scattering intensities and substantially modify the Raman line shape, even in the strong confinement regime.
Keywords
Cite
@article{arxiv.cond-mat/9808058,
title = {Exciton and confinement potential effects on the resonant Raman scattering in quantum dots},
author = {E. Menendez-Proupin and J. L. Pena and C. Trallero-Giner},
journal= {arXiv preprint arXiv:cond-mat/9808058},
year = {2009}
}
Comments
12 pages REVTeX (preprint), 1 table, 3 figures. Subj-clas: Mesoscopic systems