Electron-phonon interaction and coupled phonon--plasmon modes
材料科学
2009-11-10 v1
摘要
The theory of Raman scattering by the electron--phonon coupled system in metals and heavily doped semiconductors is developed taking into account the Coulomb screening and the electron--phonon deformation interaction. The Boltzmann equation for carriers is applied. Phonon frequencies and optic coupling constants are renormalized due to interactions with carriers. The dependent semiclassical dielectric function is involved instead of the Lindhard-Mermin expression. The results of calculations are presented for various values of carrier concentration and electron-phonon coupling constant.
引用
@article{arxiv.cond-mat/0303503,
title = {Electron-phonon interaction and coupled phonon--plasmon modes},
author = {L. Falkovsky},
journal= {arXiv preprint arXiv:cond-mat/0303503},
year = {2009}
}
备注
28, 13 figures