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相关论文: Conductance distribution in nanometer-sized semico…

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Electronic transport in multiwall carbon nanotubes and semiconductor nanowires was compared. In both cases, the non ohmic behavior of the conductance, the so-called zero bias anomaly, shows a temperature dependence that scales with the…

强关联电子 · 物理学 2007-05-23 J. -F. Dayen , X. Hoffer , T. L. Wade , M. Konczykowski , J. -E. Wegrowe

By using first-principles tight-binding electronic structure calculation and Boltzmann transport equation, we investigate the size dependence of thermoelectric properties of silicon nanowires (SiNWs). With cross section area increasing, the…

材料科学 · 物理学 2015-05-13 Lihong Shi , Donglai Yao , Gang Zhang , Baowen Li

We calculate the conductance of tubular-shaped nanowires having many potential scatterers at random positions. Our approach is based on the scattering matrix formalism and our results analyzed within the scaling theory of disordered…

其他凝聚态物理 · 物理学 2010-01-12 Llorens Serra , Mahn-Soo Choi

Which sizes of nanoparticles embedded in a crystalline solid yield the lowest thermal conductivity? Nanoparticles have long been demonstrated to reduce the thermal conductivity of crystals by scattering phonons, but most previous works…

材料科学 · 物理学 2015-02-17 Hang Zhang , Austin J. Minnich

Periodic driving of quantum dots is analyzed as a basis for developing dynamic switching devices. We study transport through periodically modulated energy levels which are coupled to leads via tunneling coefficients. Utilizing Floquet…

介观与纳米尺度物理 · 物理学 2025-09-10 Jan Mathis Giesen , Daniel Weber , Sebastian Eggert

Low temperature carrier transport properties in two-dimensional (2D) semiconductor systems can be theoretically well-understood within a mean-field type RPA-Boltzmann theory as being limited by scattering from screened Coulomb disorder…

介观与纳米尺度物理 · 物理学 2015-11-18 S. Das Sarma , E. H. Hwang

It has recently been established that the high temperature (high-Tc) superconducting state coexists with short-range charge-density-wave order and quenched disorder arising from dopants and strain. This complex, multiscale phase separation…

An approach is developed for the determination of the current flowing through a nanosize silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFET). The quantum mechanical features of the electron transport are…

介观与纳米尺度物理 · 物理学 2009-11-10 M. D. Croitoru , V. N. Gladilin , V. M. Fomin , J. T. Devreese , W. Magnus , W. Schoenmaker , B. Soree

We use electrostatic force microscopy and scanned gate microscopy to probe the conducting properties of carbon nanotubes at room temperature. Multi-walled carbon nanotubes are shown to be diffusive conductors, while metallic single-walled…

介观与纳米尺度物理 · 物理学 2009-10-31 A. Bachtold , M. S. Fuhrer , S. Plyasunov , M. Forero , Erik H. Anderson , A. Zettl , Paul L. McEuen

Scaling laws and universality are often associated with systems exhibiting emergent phenomena possessing a characteristic energy scale. We report nonequilibrium transport measurements on two different types of single-molecule transistor…

介观与纳米尺度物理 · 物理学 2009-04-20 G. D. Scott , Z. K. Keane , J. W. Ciszek , J. M. Tour , D. Natelson

We report two examples of transport phenomena based on sharp features in the effective density of states of molecular-scale transistors: Kondo physics in C$_{60}$-based devices, and gate-modulated negative differential resistance (NDR) in…

介观与纳米尺度物理 · 物理学 2007-05-23 L. H. Yu , D. Natelson

Dopant distribution in two-dimensional semiconductors is typically assumed to be stochastic, limiting deterministic defect engineering. Here, we show that non-equilibrium growth kinetics can be harnessed to define dopant-driven strain…

The electronic distribution in devices with sufficiently small diemnsions may not be in thermal equilibrium with their surroundings. Systems where the occupancies of electronic states are solely determined by tunneling processes are…

介观与纳米尺度物理 · 物理学 2016-08-17 N. García , F. Guinea

The study of electron transport through single molecules is essential to the development of molecular electronics. Indeed, trends in electronic conductance through organic nanowires have emerged with the increasing reliability of electron…

介观与纳米尺度物理 · 物理学 2007-05-24 Jordan R. Quinn , Frank W. Foss , Latha Venkataraman , Mark S. Hybertsen , Ronald Breslow

Since the 1998 proposal to build a quantum computer using dopants in semiconductors as qubits, much progress has been achieved on semiconductors nano fabrication and control of charge and spins in single dopants. However, an important…

介观与纳米尺度物理 · 物理学 2018-11-26 J. C. Abadillo-Uriel , Belita Koiller , M. J. Calderón

We report a nanoscale device concept based on a highly doped $\delta$-layer tunnel junction embedded in a semiconductor for charge sensing. Recent advances in Atomic Precision Advanced Manufacturing (APAM) processes have enabled the…

介观与纳米尺度物理 · 物理学 2025-05-16 Juan P. Mendez , Denis Mamaluy

Superatomic crystals are composed of discrete modular clusters that emulate the role of atoms in traditional atomic solids$^{1-4}$. Owing to their unique hierarchical structures, these materials are promising candidates to host exotic…

Dimensions and molecular structure play pivotal roles in the principle of heat conduction. The dimensional characteristics of solution within nanoscale systems depend on the degrees of confinement. However, the influence of such variations…

软凝聚态物质 · 物理学 2024-05-14 Shun Imamura , Yusei Kobayashi , Eiji Yamamoto

Effective electron mobilities are obtained by transport measurements on InAs nanowire field-effect transistors at temperatures ranging from 10-200 K. The mobility increases with temperature below ~ 30 - 50 K, and then decreases with…

介观与纳米尺度物理 · 物理学 2013-05-27 Nupur Gupta , Yipu Song , Gregory W. Holloway , Urbasi Sinha , Chris Haapamaki , Ray R. LaPierre , Jonathan Baugh

Conductance switching has been reported in many molecular junction devices, but in most cases has not been convincingly explained. We investigate conductance switching in Pt/stearic acid monolayer/Ti devices using pressure-modulated…

介观与纳米尺度物理 · 物理学 2009-11-13 Feng Miao , Douglas Ohlberg , Duncan Stewart , R. Stanley Williams , Chun Ning Lau*