相关论文: The spin-torque transistor

This paper reports on the improvement of the differential current gain in the spin-torque transistor based on two independent innovations, viz.the use of magnetic insulators and the spin Hall effect. Since, except for a few examples, spin…

We predict that the magnetization direction of a ferromagnet can be reversed by the spin-transfer torque accompanying spin-polarized thermoelectric heat currents. We illustrate the concept by applying a finite-element theory of…

A magnetic-field-effect transistor is proposed that generates a spin-polarized current and exhibits a giant negative magnetoresitance. The device consists of a nonmagnetic conducting channel (wire or strip) wrapped, or sandwiched, by a…

A current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of…

The recently developed semiclassical theory for magnetoelectronic circuits is applied to a transistor-like device consisting of a normal metal island and three magnetic terminals. The electric current between source and drain can be…

A "spin-flip transistor" is a lateral spin valve consisting of ferromagnetic source drain contacts to a thin-film normal-metal island with an electrically floating ferromagnetic base contact on top. We analyze the \emph{dc}-current-driven…

The current driven magnetization dynamics of a thin-film, three magnetic terminal device (spin-flip transistor) is investigated theoretically. We consider a magnetization configuration in which all magnetizations are in the device plane,…

We propose a device that can operate as a magneto-resistive switch or oscillator. The device is based on a spin-thermo-electronic control of the exchange coupling of two strong ferromagnets through a weakly ferromagnetic spacer. We show…

A spin-thermo-electronic valve with the free layer of exchange-spring type and inverse magnetoresistance is investigated. The structure has S-shaped current-voltage characteristics and can exhibit spontaneous oscillations when integrated…

Magnetic devices are a leading contender for implementing memory and logic technologies that are nonvolatile, that can scale to high density and high speed, and that do not suffer wear-out. However, widespread applications of magnetic…

We report on the first model of a thermal transistor to control heat flow. Like its electronic counterpart, our thermal transistor is a three-terminal device with the important feature that the current through the two terminals can be…

The temperature dependence of magneto current in the spin spin valve transistor system is theoretically explored based on phenomenological model. We find that the collector current strongly depends on the relative orientation of magnetic…

A superconducting double spin valve device is proposed. Its operation takes advantage of the interplay between the spin-filtering effect of ferromagnetic insulators and superconductivity-induced out-of-equilibrium transport. Depending on…

The search for novel spintronic devices brings about new ways to control switching in magnetic thin-films. In this work we experimentally demonstrate a device based on thermoelectrically controlled exchange coupling. The read out signal…

Thermal spin-transfer torque describes the manipulation of the magnetization by the application of a heat flow. The effect has been calculated theoretically by Jia et al. in 2011. It is found to require large temperature gradients in the…

The magnetization reversal and dynamics of a spin valve pillar, whose lateral size is 64$\times$64 nm$^2$, are studied by using micromagnetic simulation in the presence of spin transfer torque. Spin torques display both characteristics of…

The theoretical description has been proposed for the operation of the spin transistor in the gate-controlled InAs nanowire. The calculated current-voltage characteristics show that the current flowing from the source (spin injector) to the…

The miniaturisation of magnetic read heads and random access memory elements makes them vulnerable to thermal fluctuations. We demonstrate how current-induced spin-transfer torques can be used to suppress the effects of thermal…

Thermally-driven spin-transfer torques have recently been reported in electrically insulating ferromagnet$|$normal-metal heterostructures. In this paper, we propose two physically distinct mechanisms for such torques. The first is a local…

Fundamental physical properties limiting the performance of spin field effect transistors are compared to those of ordinary (charge-based) field effect transistors. Instead of raising and lowering a barrier to current flow these spin…