相关论文: Spin-galvanic effect due to optical spin orientati…
We show that the sign of the circular photogalvanic effect can be changed by tuning the radiation frequency of circularly polarized light. Here resonant inversion of the photogalvanic effect has been observed for direct inter-subband…
It is shown that absorption of circularly polarized infrared radiation achieved by inter-subband and intra-subband (Drude-like) transitions results in a monopolar spin orientation of free carriers. The monopolar spin polarization in…
The resonant circular photogalvanic effect is observed in wurtzite (0001)-oriented GaN low-dimensional structures excited by infrared radiation. The current is induced by angular momentum transfer of photons to the photoexcited electrons at…
To date, optical orientation of free-carrier spins and spin currents have been achieved by circularly polarized light, while the linearly polarized light has been used for optical alignment of electron momenta. Here we show that, in…
We report on the observation of photogalvanic effects induced by terahertz radiation in type-II GaSb/InAs quantum wells with inverted band order. Photocurrents are excited at oblique incidence of radiation and consists of several…
We investigate both experimentally and theoretically, the magneto-gyrotropic photogalvanic effect in zinc-blende based quantum wells with $C_{2v}$ point-group symmetry using optical excitation in the terahertz frequency range. The…
It is shown that absorption of circularly polarized infrared radiation due to intraband (Drude-like) transitions in n-type bulk semiconductors and due to intra-subband or inter-subband transitions in quantum well (QW) structures results in…
We report on the observation of the magneto-photogalvanic effect (MPGE) due to inter-subband transitions in (001)-oriented GaAs quantum wells. This effect is related to the gyrotropic properties of the structures. It is shown that…
A theory of the circular photogalvanic effect caused by spin splitting in quantum wells is developed. Direct interband transitions between the hole and electron size-quantized subbands are considered. The photocurrent excitation spectrum is…
Spin photocurrents generated by homogeneous optical excitation with circularly polarized radiation in quantum wells (QWs) are reviewed. The absorption of circularly polarized light results in optical spin orientation due to the transfer of…
The circular photogalvanic effect (CPGE) has been observed in (100)-oriented $p$-GaAs/AlGaAs quantum wells at normal incidence of far-infrared radiation. It is shown that monopolar optical spin orientation of free carriers causes an…
A theory of the circular photogalvanic effect caused by spin splitting in quantum wells is developed. Direct interband transitions between the hole and electron size-quantized subbands are considered. It is shown that the photocurrent value…
Spin photocurrents generated by homogeneous optical excitation with circularly polarized radiation in quantum wells (QWs) are reviewed. The absorption of circularly polarized light results in optical spin orientation due to the transfer of…
The circular photogalvanic effect (CPGE), induced by infrared radiation, has been observed in (0001)-oriented GaN quantum well (QW) structures. The photocurrent changes sign upon reversing the radiation helicity demonstrating the existence…
We report on the detection of the intrinsic spin Hall effect in a modulation doped Al-GaAs/GaAs/AlGaAs heterostructure bounded by a self-aligned pn-junction, fabricated by the cleaved edge overgrowth method. Light emission due to the…
The magneto-gyrotropic photogalvanic and spin-galvanic effects are observed in (0001)-oriented GaN/AlGaN heterojunctions excited by terahertz radiation. We show that free-carrier absorption of linearly or circularly polarized terahertz…
We report on the circular and linear photogalvanic effects caused by free-carrier absorption of terahertz radiation in electron channels on (001)-oriented and miscut silicon surfaces. The photocurrent behavior upon variation of the…
It is shown that a homogeneous non-equlibrium spin-polarization in semiconductor heterostructures results in an electric current. The microscopic origin of the effect is an inherent asymmetry of spin-flip scattering in systems with lifted…
The optical spin orientation effect in a GaAs/(Ga,Al)As quantum well containing a high-mobility 2D electron gas was found to be due to spin-polarized minority carriers, the holes. The observed oscillations of both the intensity and…
It has been shown that tunneling of spin-polarized electrons through a semiconductor barrier is accompanied by generation of an electric current in the plane of the interfaces. The direction of this interface current is determined by the…