相关论文: Interface-Induced Electron Spin Splitting in SiGe …
In semiconductors, the identification of doping atomic elements allowing to encode a qubit within spin states is of intense interest for quantum technologies. In transition metal dichalcogenides semiconductors, the strong spin-orbit…
The manipulation of spin degree of freedom have been demonstrated in spin polarized electron plasma in a heterostructure by using exchange-interaction induced dynamic spin splitting rather than the Rashba and Dresselhaus types, as revealed…
Spin-orbit coupling (SOC) leads to splitting of otherwise spin-degenerate bands in noncentrosymmetric materials, even if time-reversal symmetry is present. While this gives rise to well-known phenomena such as the Rashba and Dresselhaus…
Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based…
Half-Heusler compounds with 18 valence electrons per unit cell are well-known non-magnetic semiconductors. Employing first-principles electronic band structure calculations, we study the interface properties of the half-Heusler…
We present an analytical study of the D'yakonov-Perel' spin relaxation time for degenerate electrons in a photo-excited electron-hole liquid in intrinsic semiconductors exhibiting a spin-split band structure. The D'yakonov-Perel' spin…
Spin-orbit effects on electron-electron interaction are studied theoretically. The corrections to the Coulomb interaction of quantum well electrons induced by the spin-orbit coupling are derived. The developed theory is applied to calculate…
Spin-orbit splitting of conduction band in HgTe quantum wells was studied experimentally. In order to recognize the role of different mechanisms, we carried out detailed measurements of the Shubnikov-de Haas oscillations in gated structures…
A theory of the circular photogalvanic effect caused by spin splitting in quantum wells is developed. Direct interband transitions between the hole and electron size-quantized subbands are considered. The photocurrent excitation spectrum is…
The wave nature of electrons in semiconductor nanostructures results in spatial interference effects similar to those exhibited by coherent light. The presence of spin-orbit coupling renders interference in spin space and in real space…
The low-lying states of graphene contain exciting topological properties that depend on the interplay of different symmetry breaking terms. The corresponding energy gaps remained unexplored until recently, owing to the low energy scale of…
Semiconductor architectures hold promise for quantum information processing (QIP) applications due to their large industrial base and perceived scalability potential. Electron spins in silicon in particular may be an excellent architecture…
Besides hosting several intriguing physical properties, the recently discovered time-reversal-asymmetric antiferromagnets, known as altermagnets, hold immense promise for technologies based on spintronics. Understanding the symmetry…
The growing library of two-dimensional layered materials is providing researchers with a wealth of opportunity to explore and tune physical phenomena at the nanoscale. Here, we review the experimental and theoretical state-of-art concerning…
It is shown that the electron spin may not be conserved after a spin-independent scattering. This fact strongly limits the validity of the classical model of spin-up/spin-down bands, which has been used for description of magnetic…
A detailed understanding of the material properties that affect the splitting between the two low-lying valley states in Si/SiGe heterostructures will be increasingly important as the number of spin qubits is increased. Scanning gate…
Long-range quantum communication for spin qubits is an important open problem. Here we study decoherence of an electron spin qubit that is being transported in a moving quantum dot. We focus on spin decoherence due to spin-orbit interaction…
Control of electron spin coherence via external fields is fundamental in spintronics. Its implementation demands a host material that accommodates the highly desirable but contrasting requirements of spin robustness to relaxation mechanisms…
We report on beating appearance in Shubnikov-de Haas oscillations in conduction band of 18-22nm HgTe quantum wells under applied top-gate voltage. Analysis of the beatings reveals two electron concentrations at the Fermi level arising due…
Transition metal oxides whose lattice structure has edge-sharing network of octahedra constitute a diverse group of intriguing materials besides compounds with corner-sharing octahedra such as perovskites. We present a theoretical…