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相关论文: Variable-range hopping conductivity in the copper-…

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The unusual non-linear effects in hopping conduction of single-crystal La_{2}CuO_{4 + \delta} with excess oxygen has been observed. The resistance is measured as a function of applied voltage U (10^{-3} V - 25 V) in the temperature range 5…

超导电性 · 物理学 2009-10-31 B. I. Belevtsev , N. V. Dalakova , A. S. Panfilov

Transport in disordered systems often occurs via the variable range hopping (VRH) in the dilute carrier density limit, where electrons hop between randomly distributed localized levels. We study the nonequilibrium transport by a uniform DC…

无序系统与神经网络 · 物理学 2025-09-24 Kunal Mozumdar , Herbert F. Fotso , Jong E. Han

Spin-ladder compounds make interesting analogs of the high-temperature superconductors, because they contain layers of nearly one-dimensional "ladders" consisting of a square array of copper and oxygen atoms. Increasing the number of legs…

强关联电子 · 物理学 2007-05-23 F. F. Balakirev , J. B. Betts , G. S. Boebinger , N. Motoyama , H. Eisaki , S. Uchida

We analize electrical conductivity controlled by hopping of bound spin polarons in disordered solids with wide distributions of electron energies and polaron shifts (barriers). By means of percolation theory and Monte Carlo simulations we…

材料科学 · 物理学 2009-11-07 M. Foygel , R. D. Morris , A. G. Petukhov

We study the hopping conductivity in a composite made of Gaussian coils of flexible metallic wires randomly and isotropically suspended in an insulator at such concentrations that the spheres containing each wire overlap. Uncontrolled…

无序系统与神经网络 · 物理学 2007-05-23 Tao Hu , B. I. Shklovskii

Variable-range hopping transport along short one-dimensional wires and across the shortest dimension of thin three-dimensional films and narrow two-dimensional ribbons is studied theoretically. Geometric and transport characteristics of the…

无序系统与神经网络 · 物理学 2011-10-13 A. S. Rodin , M. M. Fogler

The temperature and electrical field dependent conductivity of n-type CdSe nanocrystal thin films is investigated. In the low electrical field regime, the conductivity follows G ~ exp(-(T*/T)^0.5) in the temperature range 10K<T<120K. At…

材料科学 · 物理学 2009-11-10 Dong Yu , Congjun Wang , Brian L. Wehrenberg , Philippe Guyot-Sionnest

Expressions for dependences of the pre-exponential factor \sigma_3 and the thermal activation energy \epsilon_3 of hopping electric conductivity of holes via boron atoms on the boron atom concentration N and the compensation ratio K are…

材料科学 · 物理学 2011-09-06 N. A. Poklonski , S. A. Vyrko , A. G. Zabrodskii

We have conducted temperature and frequency dependent transport measurements in amorphous Nb_x Si_{1-x} samples in the insulating regime. We find a temperature dependent dc conductivity consistent with variable range hopping in a Coulomb…

强关联电子 · 物理学 2009-11-07 Erik Helgren , George Grüner , Martin Ciofalo , David V. Baxter , John P. Carini

We study the effect of impurities on the ground state and the low-temperature dc transport in a 1D chain and quasi-1D systems of many parallel chains. We assume that strong interactions impose a short-range periodicicity of the electron…

介观与纳米尺度物理 · 物理学 2007-05-23 M. M. Fogler , S. Teber , B. I. Shklovskii

By using a combination of detailed experimental studies and simple theoretical arguments, we identify a novel mechanism characterizing the hopping transport in the Mott insulating phase of Ca$_{2-x}$Sr$_x$RuO$_4$ near the metal-insulator…

强关联电子 · 物理学 2009-11-10 S. Nakatsuji , V. Dobrosavljevic , D. Tanaskovic , M. Minakata , H. Fukazawa , Y. Maeno

We study the temperature dependence of the conductivity of the 2D electronic solid. In realistic samples, a domain structure forms in the solid and each domain randomly orients in the absence of the in-plane field. At higher temperature,…

介观与纳米尺度物理 · 物理学 2009-11-10 Shi-Jie Yang , Yue Yu

We study the hopping conduction in a composite made of straight metallic nanowires randomly and isotropically suspended in an insulator. Uncontrolled donors and acceptors in the insulator lead to random charging of wires and hence finite…

无序系统与神经网络 · 物理学 2007-05-23 Tao Hu , B. I. Shklovskii

We present the results of measurements of the thermal conductivity of the quasi one-dimensional spin S=1/2 chain compound SrCuO_2 in the temperature range between 0.4 and 300 K along the directions parallel and perpendicular to the chains.…

强关联电子 · 物理学 2009-11-07 A. V. Sologubenko , K. Gianno , H. R. Ott , A. Vietkine , A. Revcolevschi

Complex AC-conductance, $\sigma^{AC}$, in the systems with dense Ge$_{0.7}$Si$_{0.3}$ quantum dot (QD) arrays in Si has been determined from simultaneous measurements of attenuation, $\Delta\Gamma=\Gamma(H)-\Gamma(0)$, and velocity, $\Delta…

介观与纳米尺度物理 · 物理学 2009-11-11 I. L. Drichko , A. M. Diakonov , I. Yu. Smirnov , A. V. Suslov , Y. M. Galperin , A. I. Yakimov , A. I. Nikiforov

The charge transport in the copper-oxygen chain/ladder layers of (La,Y)y(Sr,Ca)14-yCu24O41 is investigated along two crystallographic directions in the temperature range from 50 K to 700 K and for doping levels from y ~= 6 (number of holes…

In one-dimensional electronic systems with strong repulsive interactions, charge excitations propagate much faster than spin excitations. Such systems therefore have an intermediate temperature range [termed the "spin-incoherent Luttinger…

无序系统与神经网络 · 物理学 2017-01-11 S. A. Parameswaran , Sarang Gopalakrishnan

In a film with large dielectric constant $\kappa$ the electric field of an electron spreads inside the film before exiting the film at large distances of order of $\kappa d$ ($d$ is the film width). This leads to the logarithmic Coulomb…

无序系统与神经网络 · 物理学 2008-04-07 B. I. Shklovskii

Transport studies of a bent quantum Hall junction at integer filling factors show strongly insulating states at higher fields. In this paper we analyze the strongly insulating behavior as a function of temperature T and dc bias V, in order…

介观与纳米尺度物理 · 物理学 2008-07-15 L. Steinke , D. Schuh , M. Bichler , G. Abstreiter , M. Grayson

We observe a complex change in the hopping exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET. The disorder was varied by applying a gate voltage and thermally drifting…

强关联电子 · 物理学 2008-09-27 T. Ferrus , R. George , C. H. W. Barnes , N. Lumpkin , D. J. Paul , M. Pepper
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