相关论文: The prefactor for screened Mott hopping

Presently, cerium-doped LaMnO$_3$ is vividly discussed as an electron-doped counterpart prototype to the well-established hole-doped mixed-valence manganites. Here, La$_{0.7}$Ce$_{0.3}$MnO$_3$ thin films of different thicknesses, degrees of…

With using general properties of superconducting state for 2D systems the universal temperature dependence of the penetration length is found out for quasi-2D HTS, that leads to Uemura plot and evidences about 2D character of…

For a system without spin-orbit coupling, the (i) nuclear plus electronic linear momentum and (ii) nuclear plus orbital electronic angular momentum are good quantum numbers. Thus, when a molecular system undergoes a nonadiabatic transition,…

The Pruning Front Conjecture is proved for an open set of H\'enon parameters far from unimodal. More specifically, for an open subset of H\'enon parameter space, consisting of two connected components one of which intersects the…

In attempt to settle the apparent disagreements between different experimental results, transport data near quantum Hall transitions are interpreted by identifying two distinct conduction regimes. The ``classical'' regime, dominated by…

The c-axis optical conductivity and d.c. resistivity are calculated within the t-J model assuming that the interlayer hopping is incoherent. Use is made of numerical results for spectral functions recently obtained with the…

This paper proposes CAT-MoEformer, a context-aware transformer with scene-conditioned mixture-of-experts (MoE) feed-forward networks, for proactive mmWave beam prediction from compressed uplink pilot observations. The spatial encoder…

We demonstrate that the Mott transition exhibits universal scaling as a consequence of the breaking of a $\mathbb{Z}_2$ symmetry in momentum space. A direct consequence of this discrete symmetry breaking is the charge or Mott gap itself.…

The magnetic field effect on the phase diagram of the organic Mott system $\kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Br in which the bandwidth was tuned by the substitution of deuterated molecules was studied by means of the resistivity…

Emerging devices such as a neuromorphic device and a qubit can use the Mott transition phenomenon, but in particular, the diverging mechanism of the phenomenon remains to be clarified. The diverging-effective mass near Mott insulators was…

In the analysis of experimental data on $p p$ (or $\bar p p$) elastic differential cross section it is customary to define an average forward slope $b$ in the form $\exp{(-b|t|)}$, where $t$ is the momentum transfer. Taking as working…

We report an NMR and magnetometry study on the expanded intercalated fulleride Cs_3C_60 in both its A15 and face centered cubic structures. NMR allowed us to evidence that both exhibit a first-order Mott transition to a superconducting (SC)…

The resistivities of the dilute, strongly-interacting 2D electron systems in the insulating phase of a silicon MOSFET are the same for unpolarized electrons in the absence of magnetic field and for electrons that are fully spin polarized by…

We investigate the magneto-conductance (MC) anisotropy in the variable range hopping regime, caused by quantum interference effects in three dimensions. When no spin-orbit scattering is included, there is an increase in the localization…

Process-related and stress-induced changes in threshold voltage are major variability concerns in ultra-scaled CMOS transistors. The device designers consider this variability as an irreducible part of the design problem and use different…

A discussion is presented on the crossover of the susceptibility from mean-field to Ising critical behavior upon approaching the critical point from below and from above Tc, both for He3 and Xe. Fits of the experimental susceptibility data…

The current dependence of the excess conductivity is measured up to $\simeq 3 T_c$ for a Bi$_2$Sr$_2$CuO$_{6+\delta}$ thin film, as a function of doping. It is found to be anomalously sensitive to the transport current and to behave as a…

The generalized spin stiffness constant for a doped quantum antiferromagnet has been investigated both analytically and numerically as a function of doping concentration at zero temperature, based on the strongly correlated t-J model on…

The quantization of a constant of motion for the harmonic oscillator with a time-explicitly depending external force is carried out. This quantization approach is compared with the normal Hamiltonian quantization approach. Numerical results…

Atomically thin semiconducting MoS2 is of great interest for high-performance flexible electronic and optoelectronic devices. Initial measurements using back-gated field-effect transistor (FET) structures on SiO2 yielded mobility of 1-50…