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In this paper a multi-band envelope-function Hamiltonian for lattice-matched semiconductor heterostructures is derived from first-principles norm-conserving pseudopotentials. The theory is applicable to isovalent or heterovalent…

材料科学 · 物理学 2007-05-23 Bradley A. Foreman

We present a new method for calculating electronic states in low-dimensional semiconductor heterostructures, which is based on the real-space Hamiltonian in the envelope function approximation. The numerical implementation of the method is…

介观与纳米尺度物理 · 物理学 2011-06-01 Yong-Hee Cho , Alexey Belyanin

We consider the behaviour of quantum Hall edges away from the Luttinger liquid fixed point that occurs in the low energy, large system limit. Using the close links between quantum Hall wavefunctions and conformal field theories we construct…

强关联电子 · 物理学 2018-11-07 Richard Fern , Roberto Bondesan , Steven H. Simon

A procedure is presented that combines density functional theory computations of bulk semiconductor alloys with the semiconductor Bloch equations, in order to achieve an ab initio based prediction of the optical properties of semiconductor…

材料科学 · 物理学 2017-06-08 L. C. Bannow , P. Rosenow , P. Springer , E. W. Fischer , J. Hader , J. V. Moloney , R. Tonner , S. W. Koch

Effective mass equations are the simplest models of carrier states in a semiconductor structures that reduce the complexity of a solid-state system to Schr\"odinger- or Pauli-like equations resempling those well known from quantum mechanics…

介观与纳米尺度物理 · 物理学 2018-03-30 Adam Mielnik-Pyszczorski , Krzysztof Gawarecki , Paweł Machnikowski

The envelope function method traditionally employs a single basis set which, in practice, relates to a single material because the $k\cdot p$ matrix elements are generally only known in a particular basis. In this work, we defined a basis…

介观与纳米尺度物理 · 物理学 2018-01-29 Maarten L. Van de Put , William G. Vandenberghe , Wim Magnus , Bart Sorée

Method of invariants is used to obtain effective kp-Hamiltonian with position-dependent band parameters and correct boundary conditions for electron and hole envelope functions in A3B5-heterostructures with arbitrary interface orientation.…

材料科学 · 物理学 2007-05-23 G. F. Glinskii , K. O. Kravchenko

A procedure to obtain single-electron wavefunctions within the tight-binding formalism is proposed. It is based on linear combinations of Slater-type orbitals whose screening coefficients are extracted from the optical matrix elements of…

材料科学 · 物理学 2016-09-16 R. Benchamekh , F. Raouafi , J. Even , F. Ben Cheikh Larbi , P. Voisin , J. -M. Jancu

The quantization of Hall conductance in a p-type heterojunction with lateral surface quantum dot superlattice is investigated. The topological properties of the four-component hole wavefunction are studied both in r- and k-spaces. New…

介观与纳米尺度物理 · 物理学 2009-11-07 V. Ya. Demikhovskii , D. V. Khomitskiy

We consider 1D lattices described by Hubbard or Bose-Hubbard models, in the presence of periodic high-frequency perturbations, such as uniform ac force or modulation of hopping coefficients. Effective Hamiltonians for interacting particles…

其他凝聚态物理 · 物理学 2015-08-18 A. P. Itin , M. I. Katsnelson

We propose a first principles effective medium formalism to study the propagation of electron waves in semiconductor heterostructures with a zero-band gap. Our theory confirms that near the K-point the dynamics of a two-dimensional electron…

介观与纳米尺度物理 · 物理学 2016-10-20 Sylvain Lannebère , Mário G. Silveirinha

A multi-band effective-mass Hamiltonian is derived for lattice-matched semiconductor nanostructures in a slowly varying external magnetic field. The theory is derived from the first-principles magnetic-field coupling Hamiltonian of Pickard…

材料科学 · 物理学 2007-05-23 Bradley A. Foreman

We propose an implementation of external homogeneous magnetic fields in k$\cdot$p Hamiltonians for holes in heterostructures, in which we made use of the minimal coupling prior to introduce the envelope function approximation. Illustrative…

介观与纳米尺度物理 · 物理学 2013-03-27 Josep Planelles , Juan I. Climente

We present the metamorphosis in the effective-potential profile of layered heterostructures, for several III-V semiconductor binary compounds, when the band mixing of light and heavy holes increases. A root-locus-like procedure, is directly…

介观与纳米尺度物理 · 物理学 2013-02-28 J. J. Flores-Godoy , A. Mendoza-Álvarez , L. Diago-Cisneros , G. Fernández-Anaya

We derive the Hamiltonian for cold fermionic atoms in an optical lattice across a broad Feshbach resonance, taking into account of both multiband occupations and neighboring-site collisions. Under typical configurations, the resulting…

其他凝聚态物理 · 物理学 2009-11-11 L. -M. Duan

The electron spectrum in a uniform nanowire with a hexagonal cross-section is calculated by means of a numerical diagonalization of the effective-mass Hamiltonian. Two basis sets are utilized. The wave-functions of low-lying states are…

介观与纳米尺度物理 · 物理学 2021-01-19 I. A. Kokurin

We derive a nonsymmetrized 8-band effective-mass Hamiltonian for quantum-dot heterostructures (QDHs) in Burt's envelope-function representation. The 8x8 radial Hamiltonian and the boundary conditions for the Schroedinger equation are…

介观与纳米尺度物理 · 物理学 2009-11-07 E. P. Pokatilov , V. A. Fonoberov , V. M. Fomin , J. T. Devreese

We formulate the multi-band kp theory of hyperfine interactions for semiconductor nanostructures in the envelope function approximation. We apply this theoretical description to the fluctuations of the longitudinal and transverse Overhauser…

介观与纳米尺度物理 · 物理学 2019-08-28 Paweł Machnikowski , Krzysztof Gawarecki , Łukasz Cywiński

The electronic band structure of cubic HfO2 is calculated using an it ab initio all-electron self--consistent linear augmented plane-wave method, within the framework of the local-density approximation and taking into account…

We consider a single particle tunnelling in a tight-binding model with nearest-neighbour couplings, in the presence of a periodic high-frequency force. An effective Hamiltonian for the particle is derived using an averaging method…

其他凝聚态物理 · 物理学 2014-02-07 A. P. Itin , A. I. Neishtadt
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