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Time dependent phenomena associated to charge transport along a quantum dot in the charge quantization regime is studied. Superimposed to the Coulomb blockade behaviour the current has novel non-linear properties. Together with static…

强关联电子 · 物理学 2009-10-31 E. S. Rodrigues , E. V. Anda , P. Orellana

The theory of quantum transport through a dot under a finite bias voltage is developed using perturbation theory in the Keldysh formalism. It is found that the Kondo resonance splits into double peaks when the voltage exceeds the Kondo…

介观与纳米尺度物理 · 物理学 2009-11-10 Tatsuya Fujii , Kazuo Ueda

We study a system of two symmetrical capacitively coupled quantum dots, each coupled to its own metallic lead, focusing on its evolution as a function of the gate voltage applied to each dot. Using the numerical renormalization group and…

强关联电子 · 物理学 2007-05-23 Andrew K. Mitchell , Martin R. Galpin , David E. Logan

We report a strong Kondo effect (Kondo temperature ~ 4K) at high magnetic field in a selective area growth semiconductor quantum dot. The Kondo effect is ascribed to a singlet-triplet transition in the ground state of the dot. At the…

介观与纳米尺度物理 · 物理学 2009-11-07 W. G. van der Wiel , S. De Franceschi , J. M. Elzerman , S. Tarucha , L. P. Kouwenhoven , J. Motohisa , F. Nakajima , T. Fukui

We investigate theoretically the linear conductance of a two-level quantum dot as a function of the gate voltage and different strength of coupling to the external electronic system (the reservoir). Apart from the weak coupling regime,…

介观与纳米尺度物理 · 物理学 2009-11-10 A. L. Chudnovskiy , S. E. Ulloa

We study the spin-valley Kondo effect of a silicon quantum dot occupied by $% \mathcal{N}$ electrons, with $\mathcal{N}$ up to four. We show that the Kondo resonance appears in the $\mathcal{N}=1,2,3$ Coulomb blockade regimes, but not in…

材料科学 · 物理学 2019-09-04 Shiueyuan Shiau , Robert Joynt

Numerical analysis of the simplest odd-numbered system of coupled quantum dots reveals an interplay between magnetic ordering, charge fluctuations and the tendency of itinerant electrons in the leads to screen magnetic moments. The…

介观与纳米尺度物理 · 物理学 2007-05-23 R. Zitko , J. Bonca , A. Ramsak , T. Rejec

We study the transport through a quantum dot coupled to two leads by single-mode point contacts. The linear conductance is calculated analytically as a function of a gate voltage and temperature T in the case when transmission coefficients…

凝聚态物理 · 物理学 2009-10-28 A. Furusaki , K. A. Matveev

We study the Kondo effect in quantum dots in an out-of-equilibrium state due to an applied dc-voltage bias. Using the method of infinitesimal unitary transformations (flow equations), we develop a perturbative scaling picture that naturally…

强关联电子 · 物理学 2010-03-22 Stefan Kehrein

We study the differential conductance in the Kondo regime of a quantum dot coupled to multiple leads. When the bias is applied symmetrically on two of the leads ($V$ and $-V$, as usual in experiments), while the others are grounded, the…

介观与纳米尺度物理 · 物理学 2009-11-13 M. Tolea , I. V. Dinu , A. Aldea

We propose a nanoscale device consisting of a double quantum dot with strong intra- and inter- dot Coulomb repulsions. In this design, the current can only flow through the lower dot, but is triggered by the gate-controlled occupancy of the…

介观与纳米尺度物理 · 物理学 2021-01-08 Pierre Lombardo , Roland Hayn , Denis Zhuravel , Steffen Schäfer

We calculate steady-state properties of a strongly correlated quantum dot under voltage bias by means of non-equilibrium Cluster Perturbation Theory and the non-equilibrium Variational Cluster Approach, respectively. Results for the…

We investigate the Kondo effect in a quadruple quantum dot device of coupled-double quantum dots (DQDs), which simultaneously contains intra-DQDs and inter-DQDs coupling. A variety of novel behaviors are observed. The differential…

介观与纳米尺度物理 · 物理学 2016-07-19 Runan Shang , Hai-Ou Li , Gang Cao , Guodong Yu , Ming Xiao , Tao Tu , Guang-Can Guo , Hongwen Jiang , A. M. Chang , Guo-Ping Guo

Electronic states and transport phenomena in semiconductor quantum dots are studied theoretically. Taking account of the electron-electron Coulomb interaction by the exact diagonalization method, the ground state and low-lying excited…

介观与纳米尺度物理 · 物理学 2009-11-07 Mikio Eto

While the properties of the Kondo model in equilibrium are very well understood, much less is known for Kondo systems out of equilibrium. We study the properties of a quantum dot in the Kondo regime, when a large bias voltage V and/or a…

强关联电子 · 物理学 2009-11-10 A. Rosch , J. Paaske , J. Kroha , P. Wölfle

Using exact-diagonalization of small clusters and Dyson equation embedding techniques, the conductance $G$ of linear arrays of quantum dots is investigated. The Hubbard interaction induces Kondo peaks at low temperatures for an odd number…

介观与纳米尺度物理 · 物理学 2009-11-10 C. A. Büsser , Adriana Moreo , Elbio Dagotto

The conductance in Coulomb blockade quantum dots exhibits sharp peaks whose spacings fluctuate with the number of electrons. We derive the temperature-dependence of these fluctuations in the statistical regime and compare with recent…

介观与纳米尺度物理 · 物理学 2009-10-31 Y. Alhassid , S. Malhotra

The rate-equation approach is used to describe sequential tunneling through a molecular junction in the Coulomb blockade regime. Such device is composed of molecular quantum dot (with discrete energy levels) coupled with two metallic…

介观与纳米尺度物理 · 物理学 2009-11-11 Kamil Walczak

We study two tunnel-coupled quantum dots each with a spin 1/2 and attached to leads in the Coulomb blockade regime. We study the interplay between Kondo correlations and the singlet-triplet exchange splitting $K$ between the two spins. We…

强关联电子 · 物理学 2009-11-07 Vitaly N. Golovach , Daniel Loss

The system described in this work consists of a quantum dot inserted in a mesoscopic ring threaded by a magnetic flux. Our aim is to present a complete description for this device and to predict the physics of a experiment with these…

介观与纳米尺度物理 · 物理学 2007-05-23 Valeria Ferrari , Guillermo Chiappe , Enrique Anda