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The temperature dependence of conductivity $\sigma (T)$ of a two-dimensional electron system in silicon has been studied in parallel magnetic fields B. At B=0, the system displays a metal-insulator transition at a critical electron density…

强关联电子 · 物理学 2009-11-07 Kevin Eng , X. G. Feng , Dragana Popovic , S. Washburn

We compare the effects of temperature, disorder and parallel magnetic field on the metallic-like temperature dependence of the resistivity. We found a similarity between the effects of disorder and parallel field: the parallel field weakens…

强关联电子 · 物理学 2007-05-23 V. M. Pudalov , G. Brunthaler , A. Prinz , G. Bauer

Experiments on a sufficiently disordered two-dimensional (2D) electron system in silicon reveal a new and unexpected kind of metallic behavior, where the conductivity decreases as \sigma (n_s,T)=\sigma (n_s,T=0)+A(n_s)T^2 (n_s-carrier…

凝聚态物理 · 物理学 2009-10-31 X. G. Feng , Dragana Popovic , S. Washburn , V. Dobrosavljevic

A detailed comparison is presented of the temperature dependence of the conductivity of dilute, strongly interacting electrons in two-dimensional silicon inversion layers in the metallic regime in the presence and in the absence of a…

强关联电子 · 物理学 2009-11-10 Yeekin Tsui , S. A. Vitkalov , M. P. Sarachik , T. M. Klapwijk

The transport properties of interacting electrons for which the spin degree of freedom is taken into account are numerically studied for small two dimensional diffusive clusters. On-site electron-electron interactions tend to delocalize the…

介观与纳米尺度物理 · 物理学 2009-11-07 Richard Berkovits , Jan W. Kantelhardt

For an electron density near the H=0 insulator-to-conductor transition, the magnetoconductivity of the low-temperature conducting phase in high-mobility silicon MOSFETs is consistent with the form…

无序系统与神经网络 · 物理学 2007-05-23 D. Simonian , S. V. Kravchenko , M. P. Sarachik , V. M. Pudalov

For a broad range of electron densities $n$ and temperatures $T$, the in-plane magnetoconductivity of the two-dimensional system of electrons in silicon MOSFET's can be scaled onto a universal curve with a single parameter…

强关联电子 · 物理学 2009-10-31 S. A. Vitkalov , Hairong Zheng , K. M. Mertes , M. P. Sarachik , T. M. Klapwijk

The conductance of an open quench-disordered two-dimensional (2D) electron system subject to an in-plane magnetic field is calculated within the framework of conventional Fermi liquid theory applied to actually a three-dimensional system of…

介观与纳米尺度物理 · 物理学 2007-05-23 Yu. V. Tarasov

We reexamine the problem of delocalization of two-dimensional electrons in the presence of random magnetic field. By introducing spatial correlations among random fluxes, a well-defined metal-insulator transition characterized by a…

无序系统与神经网络 · 物理学 2007-05-23 D. N. Sheng , Z. Y. Weng

The temperature dependence of conductivity $\sigma (T)$ in the metallic phase of a two-dimensional electron system in silicon has been studied for different concentrations of local magnetic moments. The local moments have been induced by…

无序系统与神经网络 · 物理学 2009-10-31 X. G. Feng , Dragana Popovic , S. Washburn

The anomalous conducting phase that has been shown to exist in zero field in dilute two-dimensional electron systems in silicon MOSFETs is driven into a strongly insulating state by a magnetic field of about 20 kOe applied parallel to the…

强关联电子 · 物理学 2009-10-30 D. Simonian , S. V. Kravchenko , M. P. Sarachik

The response to a parallel magnetic field of the very dilute insulating two-dimensional system of electrons in silicon MOSFET's is dramatic and similar to that found on the conducting side of the metal-insulator transition: there is a large…

强关联电子 · 物理学 2009-10-31 K. M. Mertes , D. Simonian , M. P. Sarachik , S. V. Kravchenko , T. M. Klapwijk

The normalized in-plane magnetoconductivity of the dilute strongly interacting system of electrons in silicon MOSFET's scales with $B/T$ for low densities in the insulating phase. Pronounced deviations occur at higher metallic-like…

强关联电子 · 物理学 2007-05-23 Yeekin Tsui , S. A. Vitkalov , M. P. Sarachik , T. M. Klapwijk

The zero-temperature magnetoconductivity of just-metallic Si:P scales with magnetic field, H, and dopant concentration, n, lying on a single universal curve. We note that Si:P, Si:B, and Si:As all have unusually large magnetic field…

强关联电子 · 物理学 2009-10-30 M. P. Sarachik , D. Simonian , S. V. Kravchenko , S. Bogdanovich , V. Dobrosavljevic , G. Kotliar

Bismuth-metal graphite (MG) has a unique layered structure where Bi nanoparticles are encapsulated between adjacent sheets of nanographites. The superconductivity below $T_{c}$ (= 2.48 K) is due to Bi nanoparticles. The Curie-like…

超导电性 · 物理学 2016-08-16 Masatsugu Suzuki , Itsuko S. Suzuki , Robert Lee , Jürgen Walter

In a recent Letter, Kravchenko et al. [cond-mat/9608101] have provided evidence for a metal-insulator transition (MIT) in a two-dimensional electron system (2DES) in Si metal-oxide-semiconductor field-effect transistors (MOSFETs). The…

强关联电子 · 物理学 2008-02-03 K. Ismail , J. O. Chu , Dragana Popovic , A. B. Fowler , S. Washburn

We have studied the zero magnetic field resistivity of unique high- mobility two-dimensional electron system in silicon. At very low electron density (but higher than some sample-dependent critical value, $n_{cr}\sim 10^{11}$ cm$^{-2}$),…

凝聚态物理 · 物理学 2009-10-22 S. V. Kravchenko , G. V. Kravchenko , J. E. Furneaux , V. M. Pudalov , M. D'Iorio

Magnetoresistive properties of granular Bi-based HTSC with trapped magnetic fields are investigated in the temperature region near superconducting transition . The effect of trapped field and transport current values and orientations on the…

超导电性 · 物理学 2016-08-31 A. A. Sukhanov , V. I. Omelchenko

We analyze here the behavior near the 2D insulator-superconductor quantum critical point in the presence of a perpendicular magnetic field. We show that with increasing field $H$, the quantum disordered and quantum critical regimes, in…

凝聚态物理 · 物理学 2009-11-07 Denis Dalidovich , Philip Phillips

The conductivity of a two-dimensional electron gas in a parallel magnetic field is calculated. We take into account the magnetic field induced spin-splitting, which changes the density of states, the Fermi momentum and the screening…

介观与纳米尺度物理 · 物理学 2009-10-31 V. T. Dolgopolov , A. Gold
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