相关论文: Random Berry Phase Magnetoresistance as a Probe of…
We present a systematic study of interface roughness and its effect on coherent dynamical processes in quantum dots. The potential due to a sharp, flat interface lifts the degeneracy of the lowest energy valleys and yields a set of valley…
The interference induced transverse negative magnetoresistance of GaAs/InGaAs/GaAs quantum well heterostructures has been studied in the presence of strong in-plane magnetic field. It is shown that effect of in-plane magnetic field is…
We have performed magnetoresistance measurements on polyfluorene sandwich devices in weak magnetic fields as a function of applied voltage, device temperature (10K to 300K), film thickness and electrode materials. We observed either…
We investigate the magnetotransport properties of a thin graphite wire resting on a silicon oxide substrate. The electric field effect is demonstrated with back and side gate electrodes. We study the conductance fluctuations as a function…
We measure and model electroadhesion across multi-asperity silicon interfaces with nanometer scale roughness. When electrically biased, our naturally oxidized silicon interfaces display a leakage current consistent with the Fowler-Nordheim…
Results of quantum mechanical simulations of the influence of edge disorder on transport in graphene nanoribbon metal oxide semiconductor field-effect transistors (MOSFETs) are reported. The addition of edge disorder significantly reduces…
A rough interface seems to be one of the possible reasons for low channel mobility (conductivity) in SiC MOSFETs. To evaluate the mobility by interface roughness, we drew a boundary line between amorphous insulator and crystalline 4H-SiC in…
We report measurements of magnetoresistance in single-layer graphene as a function of gate voltage (carrier density) at 250 mK. By examining signatures of weak localization (WL) and universal conductance fluctuations (UCF), we find a…
New materials such as nodal-line semimetals offer a unique setting for novel transport phenomena. Here, we calculate the quantum correction to conductivity in a disordered nodal-line semimetal. The torus-shaped Fermi surface and encircled…
We study numerically the depinning transition of driven elastic interfaces in a random-periodic medium with localized periodic-correlation peaks in the direction of motion. The analysis of the moving interface geometry reveals the existence…
This is the first study on the mode localization phenomenon in microbeams due to surface roughness. A new model for microbeams with rough surfaces is developed. The natural frequencies and mode shapes of cantilever, simple supported, and…
We consider phase-coherent transport through ballistic and diffusive two-dimensional hole systems based on the Kohn-Luttinger Hamiltonian. We show that intrinsic heavy-hole light-hole coupling gives rise to clear-cut signatures of an…
A microscopic calculation of the perpendicular current in doped multiple quantum wells is presented. Interface roughness is shown to affect the resonant transitions as well as to cause a nonresonant background current. The theoretical…
We find the current voltage characteristics of a 2DEG-S interface in magnetic field taking into account the surface roughness. Typically in experiments $L/2R_c\gtrsim 3$, where $L$ is the surface length and $R_c$ is the cyclotron radius.…
Semiconductor spin qubits may show significant device-to-device variability in the presence of spin-orbit coupling mechanisms. Interface roughness, charge traps, layout or process inhomogeneities indeed shape the real space wave functions,…
In the present work, interfacial magnetism at metal organic interface is probed using an isotope sensitive interface resolved nuclear resonance scattering technique which is made depth selective under x-rays standing wave conditions. Using…
We investigate the mutual proximity effect in a normal metal contacted to a superconductor through a magnetic interface. Analytical and self-consistent numerical results are presented, and we consider both the diffusive and ballistic…
We report measurements of magnetoresistance in bilayer graphene as a function of gate voltage (carrier density) and temperature. We examine multiple contributions to the magnetoresistance, including those of weak localization (WL),…
The fourfold degeneracy of the boron acceptor ground state in silicon, which is easily lifted by any symmetry breaking perturbation, allows for a strong inhomogeneous broadening of the boron-related electron paramagnetic resonance (EPR)…
The topological properties of a material's electronic structure are encoded in its Berry curvature, a quantity which is intimately related to the transverse electrical conductivity. In transition metal dichalcogenides with broken inversion…