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相关论文: Commensurate-incommensurate transition in two-coup…

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The doping-induced metal-insulator transition in two-chain systems of correlated fermions is studied using a solvable limit of the t-J model and the fact that various strong- and weak-coupling limits of the two-chain model are in the same…

强关联电子 · 物理学 2009-10-31 H. J. Schulz

We study the quantum phase transition from an insulator to a metal realized at t'=t'_c > 0.5t in the ground state of the half-filled Hubbard chain with both nearest-neighbor (t) and next-nearest-neighbor (t') hopping. The study is carried…

强关联电子 · 物理学 2007-05-23 G. I. Japaridze , R. M. Noack , D. Baeriswyl

We analyze the anomalous behavior in hole-doped cuprates near 1/8 doping in terms of the commensurate-incommensurate transition of a stripe phase. Based on an effective Ginzburg-Landau theory appropriate for weak pinning, we calculate the…

强关联电子 · 物理学 2007-08-09 E. Kaneshita , I. Martin , A. R. Bishop

The mechanism that drives a metal-insulator transition in an undoped quasi-one-dimensional Mott insulator is examined in the framework of the Hubbard model with two different hoppings t_{perp 1} and t_{perp 2} between nearest-neighbor…

强关联电子 · 物理学 2011-11-09 M. Tsuchiizu , Y. Suzumura , C. Bourbonnais

A possibility of a metal-insulator transition in molecular conductors has been studied for systems composed of donor molecules and fully ionized anions with an incommensurate ratio close to 2:1 based on a one-dimensional extended Hubbard…

强关联电子 · 物理学 2009-11-11 Hideo Yoshioka , Hitoshi Seo , Hidetoshi Fukuyama

In the present paper metal-insulator transition is studied in a generalized Hubbard model with correlated hopping at half-filling and zero temperature. Single-particle Green function and energy spectrum of electron system are calculated.…

强关联电子 · 物理学 2015-06-25 Leonid Didukh , Vasyl Hankevych

We investigate the doping-driven metal-insulator transition of the (2+1)-dimensional Hubbard model in the path-integral formalism with the tensor renormalization group method. We calculate the electron density $\langle n\rangle$ as a…

强关联电子 · 物理学 2022-03-23 Shinichiro Akiyama , Yoshinobu Kuramashi , Takumi Yamashita

We use a random gap model to describe a metal-insulator transition in three-dimensional semiconductors due to doping and find a conventional phase transition, where the effective scattering rate is the order parameter. Spontaneous symmetry…

无序系统与神经网络 · 物理学 2019-11-04 K. Ziegler

In the present paper we propose a doubly orbitally degenerate narrow-band model with correlated hopping. The peculiarity of the model is taking into account the matrix element of electron-electron interaction which describes intersite…

强关联电子 · 物理学 2009-10-31 L. Didukh , Yu. Skorenkyy , Yu. Dovhopyaty , V. Hankevych

We investigate the zero-magnetization phase diagram of a spin-1/2 chain with competing ferromagnetic nearest-neighbor and antiferromagnetic next-nearest-neighbor exchange couplings in the strongly interacting regime. Using density matrix…

强关联电子 · 物理学 2026-05-21 Julien Fitouchi , Natalia Chepiga

We study two (very) weakly-coupled Hubbard chains in the half-filled case, and especially the situation where the intrachain Mott scale $m$ is much larger than the bare single-electron interchain hopping $t_{\perp}$. First, we find that the…

强关联电子 · 物理学 2009-10-31 Karyn Le Hur

We consider a one-dimensional system of electrons interacting via a short-range repulsion and coupled to phonons close to the metal-insulator transition at half filling. We argue that the metal-insulator transition can be described as a…

凝聚态物理 · 物理学 2015-06-25 M. Fabrizio , C. Castellani , C. Di Castro

We study the boundary physics of bulk insulators by considering three coupled Hubbard chains in a linear confining potential. In the Hartree-Fock approximation, the ground state at and slightly off the particle-hole symmetric point remains…

介观与纳米尺度物理 · 物理学 2022-02-10 Niels John , Yuval Gefen , Bernd Rosenow

A powerful new impurity solver is shown to permit a systematic study of the doping driven Mott transition in a one-band Hubbard model within the framework of single-site dynamical mean field theory. At small dopings and large interaction…

强关联电子 · 物理学 2013-05-29 Philipp Werner , Andrew J. Millis

We have studied the critical behaviour of a doped Mott insulator near the metal-insulator transition for the infinite-dimensional Hubbard model using a linearized form of dynamical mean-field theory. The discontinuity in the chemical…

强关联电子 · 物理学 2009-11-07 Y. Ono , R. Bulla , A. C. Hewson , M. Potthoff

We investigate the ground state phases of an extended Bose-Hubbard ladder of unit filling via the density-matrix-renormalization-group method and, in particular, the effect of rung-hoppings. In contrast to a single-chain, a commensurate…

量子气体 · 物理学 2024-08-08 Ashwath N Madhusudan , Gopal Chandra Santra , Inderpreet Kaur , Weibin Li , Rejish Nath

A simple model of cuprate superconductivity with an electron spectrum prepared by doping is developed. The pair-transfer interaction couples the itinerant band with two components ("hot'' and "cold'') of the defect subsystem. There are…

超导电性 · 物理学 2007-05-23 N. Kristoffel , P. Rubin

A simple model to describe the energetic phase diagram of electron-doped cuprate superconductor is developed. Interband pairing operates between the UHB and the defect states created by doping and supplied by both extincting HB-s. Two…

超导电性 · 物理学 2009-11-13 N. Kristoffel , P. Rubin

We study the filling-controlled metal-insulator transition in the two-dimensional Hubbard model near half-filling with the use of zero temperature quantum Monte Carlo methods. In the metallic phase, the compressibility behaves as $\kappa…

凝聚态物理 · 物理学 2009-10-28 Nobuo Furukawa , Fakher F. Assaad , Masatoshi Imada

In the previous papers (Journ. of Phys. Stud. 2, 362 (1998); cond-mat/9811213) we have studied metal-insulator transition in a generalized Hubbard model with correlated hopping at half-filling and zero temperature. The present paper is…

强关联电子 · 物理学 2007-05-23 Leonid Didukh , Vasyl Hankevych
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