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相关论文: A New Two-Pole Approximation in the Hubbard Model.…

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The electrical transport properties of a bipolar InAs/GaSb system have been studied in magnetic field. The resistivity oscillates between insulating and metallic behaviour while the quantum Hall effect shows a digital character oscillating…

介观与纳米尺度物理 · 物理学 2009-10-31 R. J. Nicholas , K. Takashina , M. Lakrimi , B. Kardynal , S. Khym , N. J. Mason , D. M. Symons , D. K. Maude , J. C. Portal

We solve the Periodic Anderson model in the Mott-Hubbard regime, using Dynamical Mean Field Theory. Upon electron doping of the Mott insulator, a metal-insulator transition occurs which is qualitatively similar to that of the single band…

强关联电子 · 物理学 2009-11-13 G. Sordi , A. Amaricci , M. J. Rozenberg

The two-dimensional Holstein-Hubbard model is studied by means of continuous-time quantum Monte Carlo simulations. Using renormalization-group-invariant correlation ratios and finite-size extrapolation, the critical temperature of the…

强关联电子 · 物理学 2018-08-06 Manuel Weber , Martin Hohenadler

We use determinant Quantum Monte Carlo simulations and exact diagonalization to explore insulating behavior in the Hubbard model with a bimodal distribution of randomly positioned local site energies. From the temperature dependence of the…

强关联电子 · 物理学 2007-07-10 N. Paris , A. Baldwin , R. T. Scalettar

The ionic Hubbard model is a paradigmatic setup for studying the competition between band and Mott insulating behavior. Within the variationally exact in infinite dimensions Gutzwiller approximation, we derive a compact analytic expression…

强关联电子 · 物理学 2025-12-13 Marcin M. Wysokiński

An unusual metallic phase is proven to develop in the one dimensional ionic Hubbard model, at half-filling and zero magnetization, at intermediate electron-electron repulsion $U$ when second neighbors hopping is allowed and tuned close to a…

强关联电子 · 物理学 2025-09-15 Gerardo L. Rossini , George I. Japaridze

The mass-imbalanced Hubbard model represents a continuous evolution from the Hubbard to the Falicov-Kimball model. We employ dynamical mean field theory and study the paramagnetic metal-insulator transition, which has a very different…

强关联电子 · 物理学 2017-06-29 Marie-Therese Philipp , Markus Wallerberger , Patrik Gunacker , Karsten Held

A systematic study has been made on the metal-insulator (MI) transition of the doubly degenerate Hubbard model (DHM) in the paramagnetic ground state, by using the slave-boson mean-field theory which is equivalent to the Gutzwiller…

强关联电子 · 物理学 2009-10-30 Hideo Hasegawa

The Mott-Hubbard transition in the half-filled Hubbard model is studied analytically for the paramagnetic ground state and the classical N\'{e}el state. The single-particle density of states is obtained by calculating the Green's function…

凝聚态物理 · 物理学 2013-07-19 Jongbae Hong , Hae-Young Kee

We investigate the metal-to-insulator phase transition driven by the density-density electronic interaction in the quarter-filled model on a cubic lattice with two orbitals split by a crystal field. We show that a systematic consideration…

强关联电子 · 物理学 2023-05-30 M. Vandelli , J. Kaufmann , V. Harkov , A. I. Lichtenstein , K. Held , E. A. Stepanov

Using the nonlocal coherent-potential approximation we study the effect of intersite spatial correlations on the transition from band insulator to metal as well as from metal to Mott insulator in the "alloy analogy" approach to the…

强关联电子 · 物理学 2014-07-22 D. A. Rowlands , Yu-Zhong Zhang

We study the filling-controlled metal-insulator transition in the two-dimensional Hubbard model near half-filling with the use of zero temperature quantum Monte Carlo methods. In the metallic phase, the compressibility behaves as $\kappa…

凝聚态物理 · 物理学 2009-10-28 Nobuo Furukawa , Fakher F. Assaad , Masatoshi Imada

By comparing the responses to an in-plane magnetic field near the metal-insulator transition (MIT), we find that the observed MIT in Si MOSFETs can be described by the non-perturbative Mott-Hubbard scenario. Interrelations between…

强关联电子 · 物理学 2007-05-23 Ping Sun

We investigate the doping-driven metal-insulator transition of the (2+1)-dimensional Hubbard model in the path-integral formalism with the tensor renormalization group method. We calculate the electron density $\langle n\rangle$ as a…

强关联电子 · 物理学 2022-03-23 Shinichiro Akiyama , Yoshinobu Kuramashi , Takumi Yamashita

Quantum systems under electric fields provide a powerful framework for uncovering and controlling novel quantum phases, especially in low-dimensional systems with strong correlations. In this work, we investigate quantum phase transitions…

强关联电子 · 物理学 2025-05-22 D. Arisa , R. M. Dos Santos , Isaac M. Carvalho , Vivian V. França

We consider scaling of the mean square dipole moments in a plasma with logarithmic interactions in a two- and three-dimensional system. In both cases, we establish the existence of a low-temperature regime where the mean square dipole…

强关联电子 · 物理学 2007-05-23 S. Kragset , A. Sudbo , F. S. Nogueira

To explain the main features of the metal-insulator transition (MIT) in 2D we suggest a simple model taking into account strongly localized states in the band tail of 2D conductivity band with a specific emphasize of a role of…

无序系统与神经网络 · 物理学 2009-11-07 V. I. Kozub , and N. V. Agrinskaya

For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we…

强关联电子 · 物理学 2011-08-31 G. Sordi , K. Haule , A. -M. S. Tremblay

The recent experimental observation of a metal-insulator transition in two dimensions prompts a re-examination of the theory of disordered interacting systems. We argue that the existing theory permits the existence of a metallic phase and…

凝聚态物理 · 物理学 2009-10-31 C. Castellani , C. Di Castro , P. A. Lee

We measure the normal-state in-plane resistivity of La-doped Bi-2201 single crystals at low temperatures by suppressing superconductivity with 60-T pulsed magnetic fields. With decreasing hole doping, we observe a crossover from a metallic…

超导电性 · 物理学 2009-10-31 S. Ono , Yoichi Ando , T. Murayama , F. F. Balakirev , J. B. Betts , G. S. Boebinger