相关论文: Emerging memory technologies at room/cryogenic tem…

To support emerging applications ranging from holographic communications to extended reality, next-generation mobile wireless communication systems require ultra-fast and energy-efficient (UFEE) baseband processors. Traditional…

The balance between low power consumption and high efficiency in memory devices is a major limiting factor in the development of new technologies. Magnetic random access memories (MRAM) based on CoFeB/MgO magnetic tunnel junctions (MTJs)…

DRAM is the primary technology used for main memory in modern systems. Unfortunately, as DRAM scales down to smaller technology nodes, it faces key challenges in both data integrity and latency, which strongly affect overall system…

Large-scale integration of emerging nanoscale non-volatile memory devices, e.g. resistive random-access memory (RRAM), can enable a new generation of neuromorphic computers that can solve a wide range of machine learning problems. Such…

AI chips commonly employ SRAM memory as buffers for their reliability and speed, which contribute to high performance. However, SRAM is expensive and demands significant area and energy consumption. Previous studies have explored replacing…

This paper gives an overview of recent progress in the brain inspired computing field with a focus on implementation using emerging memories as electronic synapses. Design considerations and challenges such as requirements and design…

As high-performance computing (HPC) moves into the exascale era, computer scientists and engineers must find innovative ways of transferring and processing unprecedented amounts of data. As the scale and complexity of the applications…

Non-volatile memory (NVM) provides a scalable and power-efficient solution to replace DRAM as main memory. However, because of relatively high latency and low bandwidth of NVM, NVM is often paired with DRAM to build a heterogeneous memory…

The current mobile applications have rapidly growing memory footprints, posing a great challenge for memory system design. Insufficient DRAM main memory will incur frequent data swaps between memory and storage, a process that hurts…

As transistor-based memory technologies like dynamic random access memory (DRAM) approach their scalability limits, the need to explore alternative storage solutions becomes increasingly urgent. Phase-change memory (PCM) has gained…

It has become increasingly difficult to understand the complex interaction between modern applications and main memory, composed of DRAM chips. Manufacturers are now selling and proposing many different types of DRAM, with each DRAM type…

Many modern workloads, such as neural networks, databases, and graph processing, are fundamentally memory-bound. For such workloads, the data movement between main memory and CPU cores imposes a significant overhead in terms of both latency…

Conventional computing paradigm struggles to fulfill the rapidly growing demands from emerging applications, especially those for machine intelligence, because much of the power and energy is consumed by constant data transfers between…

Main memories play an important role in overall energy consumption of embedded systems. Using conventional memory technologies in future designs in nanoscale era causes a drastic increase in leakage power consumption and temperature-related…

The development in electronic sector has brought a remarkable change in the life style of mankind. At the same time this technological advancement results adverse effect on environment due to the use of toxic and non degradable materials in…

Dynamic Random Access Memory (DRAM) is the prevalent memory technology used to build main memory systems of almost all computers. A fundamental shortcoming of DRAM is the need to refresh memory cells to keep stored data intact. DRAM refresh…

This paper reviews memory technologies used in Field-Programmable Gate Arrays (FPGAs) for neuromorphic computing, a brain-inspired approach transforming artificial intelligence with improved efficiency and performance. It focuses on the…

Intrinsic charge trap capacitive non-volatile flash memories take a significant share of the semiconductor electronics market today. It is a challenge to create intrinsic traps in the dielectric layer without high temperature processing…

Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and…

This paper summarizes the idea of Tiered-Latency DRAM, which was published in HPCA 2013. The key goal of TL-DRAM is to provide low DRAM latency at low cost, a critical problem in modern memory systems. To this end, TL-DRAM introduces…