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Chalcogenide materials are an important class of phase change material (PCMs) owing to their employment in digital memory solutions. Chalgogenide materials have applications in phase change random access memory (PCRAM) due to their ability…

材料科学 · 物理学 2025-10-15 Owain T. Beynon , Adham Hashibon

Reconfigurable or programmable photonic devices are rapidly growing and have become an integral part of many optical systems. The ability to selectively modulate electromagnetic waves through electrical stimuli is crucial in the advancement…

One of the most widely used active materials for phase-change memories (PCM), the ternary stoichiometric compound Ge$_2$Sb$_2$Te$_5$ (GST), has a low crystallization temperature of around 150$^\circ$C. One solution to achieve higher…

材料科学 · 物理学 2024-09-11 Robin Miquel , Thomas Cabout , Olga Cueto , Benoît Sklénard , Mathis Plapp

Chalcogenide phase-change materials (PCMs) offer new paradigms for programmable photonic integrated circuits (PICs) thanks to their zero static energy and significant refractive index contrast. However, prototypical PCMs, such as GeSbTe…

光学 · 物理学 2024-02-15 Rui Chen , Virat Tara , Jayita Dutta , Zhuoran Fang , Jiajiu Zheng , Arka Majumdar

Chalcogenide phase change materials (PCMs) have been extensively applied in data storage, and they are now being proposed for high resolution displays, holographic displays, reprogrammable photonics, and all-optical neural networks. These…

光学 · 物理学 2023-08-09 Yunzheng Wang , Jing Ning , Li Lu , Michel Bosman , Robert E. Simpson

Chalcogenide optical phase change materials (PCMs) have garnered significant interest for their growing applications in programmable photonics, optical analog computing, active metasurfaces, and beyond. Limited endurance or cycling lifetime…

Phase-change materials (PCMs) such as Ge-Sb-Te alloys are widely used in non-volatile memory applications due to their rapid and reversible switching between amorphous and crystalline states. However, their functional properties are…

材料科学 · 物理学 2025-09-03 Mridul Kumar , Yevgeny Rakita

We analyze, design and assess the performance of a reflective reconfigurable metasurface (MS) architecture for optical wireless communications. The device is based on the Ge-Sb-Te (GST225) phase-change material (PCM) alloy, thermally…

Chalcogenide alloys are materials of interest for optical recording and non-volatile memories. We perform ab-initio molecular dynamics simulations aiming at shading light onto the structure of amorphous Ge2Sb2Te5 (GST), the prototypical…

材料科学 · 物理学 2009-11-13 S. Caravati , M. Bernasconi , T. D. Kuehne , M. Krack , M. Parrinello

While phase-change materials (PCMs) composed of chalcogenide have different crystallization mechanisms (CM), such as nucleation-dominated Ge2Sb2Te5 (GST) and growth-dominated GeTe (GT), revealing the essential reason of CM as well as the…

In the search for phase change materials (PCM) that may rival traditional random access memory, a complete understanding of the amorphous to crystalline phase transition is required. For the well-known Ge2Sb2Te5 (GST) and GeTe (GT)…

材料科学 · 物理学 2015-06-19 James L. Bosse , Ilya Grishin , Bryan D. Huey , Oleg V. Kolosov

Chalcogenide phase-change materials (PCMs) are one of the most mature candidates for next-generation memory technology. Recently, CrGeTe3 (CrGT) emerged as a promising PCM due to its enhanced amorphous stability and fast crystallization for…

材料科学 · 物理学 2024-11-12 Yihui Jiang , Suyang Sun , Hanyi Zhang , Xiaozhe Wang , Yibo Lei , Riccardo Mazzarello , Wei Zhang

Recently, chalcogenide glass based phase change materials (PCMs) have shown utility as a tuning material for a range of nanophotonic devices. Owing to their low loss, ultrafast switching speeds and wide waveband operation, PCMs are…

光学 · 物理学 2021-01-01 Hyun Jung Kim , Jung-woo Sohn , Nina Hong , Calum Williams , William Humphreys

The thermal properties of amorphous and crystalline phases in chalcogenide phase change materials (PCM) play a key role in device performance for non-volatile random-access memory. Here, we report the nanothermal morphology of amorphous and…

材料科学 · 物理学 2015-06-22 J. L. Bosse , M. Timofeeva , P. D. Tovee , B. J. Robinson , B. D. Huey , O. V. Kolosov

Phase-change materials (PCMs) are the subject of considerable interest because they have been recognized as potential active layers for next-generation non-volatile memory devices, known as Phase Change Random Access Memories (PRAMs). By…

材料科学 · 物理学 2015-05-14 M. Micoulaut , J-Y. Raty , C. Otjacques , C. Bichara

Phase-change materials (PCMs)-based integrated photonic memory offers a viable pathway for the development of neuromorphic computing chip. The sizable optical contrast in the telecom band between amorphous and crystalline phases of PCM, in…

材料科学 · 物理学 2026-03-12 Xueyang Shen , Ruixuan Chu , Ding Xu , Yuan Gao , Wen Zhou , Wei Zhang

Phase-change materials of the (GeTe)n (Sb2Te3) (GST) system are of high relevance in memory storage and energy conversion applications due to their fast-switching speed, high data retention, and tunable properties. Here, we report on a fast…

材料科学 · 物理学 2025-07-18 M. Zhezhu , A. Vasil'ev , M. Yapryntsev , E. Ghalumyan , D. A. Ghazaryan , H. Gharagulyan

Nanophotonics has garnered intensive attention due to its unique capabilities in molding the flow of light in the subwavelength regime. Metasurfaces (MSs) and photonic integrated circuits (PICs) enable the realization of mass-producible,…

Multi-component chalcogenides, such as quasi-binary GeTe-Sb$_{2}$Te$_{3}$ alloys, are widely used in optical data storage media in the form of rewritable optical discs. Ge$_{2}$Sb$_{2}$Te$_{5}$ (GST) in particular has proven to be one of…

材料科学 · 物理学 2015-09-29 Muneaki Hase , Paul Fons , Kirill Mitrofanov , Alexander V. Kolobov , Junji Tominaga

Chalcogenide phase-change materials (PCMs) are regarded as the leading candidate for storage-class non-volatile memory and neuro-inspired computing. Recently, using the $TiTe_2$/$Sb_2Te_3$ material combination, a new framework -…

材料科学 · 物理学 2021-07-20 Xudong Wang , Yue Wu , Yuxing Zhou , Volker L. Deringer , Wei Zhang
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