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相关论文: First Plasma Atomic Layer Etching of Diamond via O…

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In the relentless pursuit of advancing semiconductor technologies, the demand for atomic layer processes has given rise to innovative processes, which have already played a significant role in the continued miniaturization features. Among…

材料科学 · 物理学 2025-01-01 Jun Peng , Rakshith Venugopal , Robert Blick , Robert Zierold

On-chip photonic devices based on SiO$_2$ are of interest for applications such as microresonator gyroscopes and microwave sources. Although SiO$_2$ microdisk resonators have achieved quality factors exceeding one billion, this value…

应用物理 · 物理学 2025-09-04 David Catherall , Azmain Hossain , Austin Minnich

We report on the development and application of an atomic layer etching (ALE) procedure based on alternating exposures of trimethylaluminum and anhydrous hydrogen fluoride (HF) implemented to controllably etch aluminum oxide. Our ALE…

We report the isotropic plasma atomic layer etching (ALE) of aluminum nitride using sequential exposures of SF$_6$ plasma and trimethylaluminum (Al(CH$_3$)$_3$, TMA). ALE was observed at temperatures greater than 200 $^\circ$C, with a…

介观与纳米尺度物理 · 物理学 2022-11-09 Haozhe Wang , Azmain Hossain , David Catherall , Austin J. Minnich

Niobium nitride (NbN) is a metallic superconductor that is widely used for superconducting electronics due to its high transition temperature ($T_c$) and kinetic inductance. Processing-induced damage negatively affects the performance of…

We report a direct, maskless electron beam-induced etching (EBIE) process for diamond in air, enabling high-precision patterning without lithography or plasma processing. Through a comprehensive analysis of electron-gas, electron-diamond,…

材料科学 · 物理学 2026-03-31 Duc-Duy Tran , Cedric Mannequin , Fabrice Donatini , Masahiro Sasaki , Etienne Gheeraert

The high frequency performance and yield of III-V semiconductor devices such as InP HEMTs is negatively impacted by subsurface etch damage and non-uniform etch depth over the wafer. Atomic layer etching (ALE) has the potential to overcome…

Diamond has recently attracted considerable attention as a promising platform for quantum technologies, photonics and high resolution sensing applications. Here we demonstrate a chemical approach that enables the fabrication of functional…

材料科学 · 物理学 2014-05-26 Aiden A. Martin , Milos Toth , Igor Aharonovich

Surface termination and interfacial interactions are critical for advanced solid-state quantum applications. In this paper, we demonstrate that atomic layer deposition (ALD) can both provide valuable insight on the chemical environment of…

材料科学 · 物理学 2023-07-20 Jessica C. Jones , Nazar Delegan , F. Joseph Heremans , Alex B. F. Martinson

Microwave loss in superconducting titanium nitride (TiN) films is attributed to two-level systems in various interfaces arising in part from oxidation and microfabrication-induced damage. Atomic layer etching (ALE) is an emerging…

介观与纳米尺度物理 · 物理学 2023-10-26 Azmain A. Hossain , Haozhe Wang , David S. Catherall , Martin Leung , Harm C. M. Knoops , James R. Renzas , Austin J. Minnich

Near-surface nitrogen-vacancy ({NV}) centers in diamond have been successfully employed as atomic-sized magnetic field sensors for external spins over the last years. A key challenge is still to develop a method to bring NV centers at…

We demonstrate the fabrication of sub-micron layers of single-crystal diamond suitable for subsequent processing as demonstrated by this test ring structure. This method is a significant enabling technology for nanomechanical and photonic…

Many promising applications of single crystal diamond and its color centers as sensor platform and in photonics require free-standing membranes with a thickness ranging from several micrometers to the few 100 nm range. In this work, we…

We present a dry surface treatment combining atomic layer etching and deposition (ALE and ALD) to mitigate dielectric loss in fully fabricated superconducting quantum devices formed from aluminum thin films on silicon. The treatment,…

A method for obtaining a smooth, single crystal diamond surface is presented, whereby a sacrificial defective layer is created by implantation and graphitized by annealing before being selectively etched. We have used O+ at 240 keV, the…

Using first-principles density functional theory calculations in combination with the climbing-image nudged elastic band method, we investigated the adsorption, desorption, and diffusion of atomic chlorine and molecular chlorine on the Al…

材料科学 · 物理学 2025-09-10 Sanjay Nayak , Nikolai Andrianov , Thomas Gruhn , Joaquin Miranda

Two-dimensional (2D) diamond has aroused tremendous interest in nanoelectronics and optoelectronics, owing to its superior properties and flexible characteristics compared to bulk diamond. Despite significant efforts, great challenges lie…

In situ plasma etching is a common method to prepare diamond substrates for epitaxial overgrowth to effectuate higher quality. However, there is no practical, direct, qualitative method established so far to assess the performance of the…

材料科学 · 物理学 2021-06-16 J. Langer , V. Cimalla , M. Prescher , J. Ligl , B. Tegetmeyer , C. Schreyvogel , O. Ambacher

We report on mask-less, high resolution etching of diamond surfaces, featuring sizes down to 10 nm. We use a scanning electron microscope (SEM) together with water vapor, which was injected by a needle directly onto the sample surface.…

应用物理 · 物理学 2019-09-04 Vasilis Dergianlis , Martin Geller , Dennis Oing , Nicolas Woehrl , Axel Lorke

Manipulating materials with atomic-scale precision is essential for the development of next-generation material design toolbox. Tremendous efforts have been made to advance the compositional, structural, and spatial accuracy of material…

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