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We report a double-layer electronic system made of two closely-spaced but electrically isolated graphene monolayers sandwiched in boron nitride. For large carrier densities in one of the layers, the adjacent layer no longer exhibits a…

We investigate the electronic properties of heterostructures based on ultrathin hexagonal boron nitride (h-BN) crystalline layers sandwiched between two layers of graphene as well as other conducting materials (graphite, gold). The tunnel…

Tunneling field-effect transistors (FETs) have been intensely explored recently due to its potential to address power concerns in nanoelectronics. The recently discovered graphene nanoribbon (GNR) is ideal for tunneling FETs due to its…

材料科学 · 物理学 2009-09-30 Pei Zhao , Jyotsna Chauhan , Jing Guo

Electron tunneling spectroscopy measurements on van der Waals heterostructures consisting of metal and graphene (or graphite) electrodes separated by atomically thin hexagonal boron nitride tunnel barriers are reported. The tunneling…

介观与纳米尺度物理 · 物理学 2016-12-07 U. Chandni , K. Watanabe , T. Taniguchi , J. P. Eisenstein

Graphene has exceptional optical, mechanical and electrical properties, making it an emerging material for novel optoelectronics, photonics and for flexible transparent electrode applications. However, the relatively high sheet resistance…

介观与纳米尺度物理 · 物理学 2013-02-06 Guang-Xin Ni , Yi Zheng , Sukang Bae , Chin Yaw Tan , Orhan Kahya , Jing Wu , Byung Hee Hong , Kui Yao , Barbaros Özyilmaz

Electroluminescence, a non-thermal radiative process, is ubiquitous in semi-conductors and insulators but fundamentally precluded in metals. We show here that this restriction can be circumvented in high-quality graphene. By investigating…

The global electronic properties of solid-state devices are strongly affected by the microscopic spatial paths of charge carriers. Visualising these paths in novel devices produced by scalable processes would provide a quality assessment…

Tunneling of quasiparticles between two nearly-aligned graphene sheets produces resonant current-voltage characteristics because of the quasi-exact conservation of in-plane momentum. We claim that, in this regime, vertical transport in…

介观与纳米尺度物理 · 物理学 2016-03-29 Karina A. Guerrero-Becerra , Andrea Tomadin , Marco Polini

Electron tunneling is associated with light emission. In order to elucidate its generating mechanism, we provide a novel experimental ansatz that employs fixed-distance epitaxial graphene as metallic electrodes. In contrast to previous…

介观与纳米尺度物理 · 物理学 2020-11-04 Christian Ott , Stephan Götzinger , Heiko B. Weber

Metal/graphene interfaces generated by electrode deposition induce barriers or potential modulations influencing the electronic transport properties of graphene based devices. However, their impact on the local mechanical properties of…

介观与纳米尺度物理 · 物理学 2014-02-21 Zoltán Osváth , François Lefloch , Vincent Bouchiat , Claude Chapelier

Monatomic metal (e.g. silver) structures could form preferably at graphene edges. We explore their structural and electronic properties by performing density functional theory based first-principles calculations. The results show that…

介观与纳米尺度物理 · 物理学 2017-09-13 Ning Wei , Cheng Chang , Hongwei Zhu , Zhiping Xu

We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between $\sim$10 and 200 mV. We attribute them to electron…

High quality epitaxial graphene films can be applied as templates for tailoring graphene-substrate interfaces that allow for precise control of the charge carrier behavior in graphene through doping and many-body effects. By combining…

The combination of high frequency vibrations and metallic transport in graphene makes it a unique material for nano-electromechanical devices. In this letter, we show that graphene-based nano-electromechanical devices are extremely well…

介观与纳米尺度物理 · 物理学 2012-03-13 Tony Low , Yongjin Jiang , Mikhail Katsnelson , Francisco Guinea

Vertical tunneling field-effect-transistor (FET) based on graphene heterojunctions with layers of hBN is simulated by self-consistent quantum transport simulations. It is found that the asymmetric p-type and n-type conduction is due to work…

介观与纳米尺度物理 · 物理学 2015-06-05 S. Bala Kumar , Gyungseon Seol , Jing Guo

We investigate the optical properties of edge-functionalized graphene nanosystems, focusing on the formation of junctions and charge transfer excitons. We consider a class of graphene structures which combine the main electronic features of…

材料科学 · 物理学 2011-05-18 Caterina Cocchi , Deborah Prezzi , Alice Ruini , Marilia J. Caldas , Elisa Molinari

There has been a rapidly growing interest in optoelectronic properties of graphene and associated structures. Despite the general belief on absence of spontaneous emission in graphene, which is normally attributed to its unique ultrafast…

介观与纳米尺度物理 · 物理学 2015-09-30 Sina Khorasani

We investigate the current-voltage characteristics of a field-effect tunnelling transistor comprised of both monolayer and bilayer graphene with well-aligned crystallographic axes, separated by three layers of hexagonal boron nitride. Using…

介观与纳米尺度物理 · 物理学 2015-12-10 Thomas L M Lane , John R Wallbank , Vladimir I Fal'ko

Two-dimensional (2D) crystals, such as graphene, hexagonal boron nitride and transitional metal dichalcogenides, have attracted tremendous amount of attention over the past decade due to their extraordinary thermal, electrical and optical…

材料科学 · 物理学 2017-02-16 Y. Zhao , Z. Wan , U. Hetmaniuk , M. P. Anantram

Carrier injection into carbon nanotubes and graphene nanoribbons, contacted by a metal coating over an arbitrary length, is studied by various means: Minimal models allow for exact analytic solutions which can be transferred to the original…

介观与纳米尺度物理 · 物理学 2008-04-30 Norbert Nemec , David Tomanek , Gianaurelio Cuniberti
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