相关论文: Comprehensive Optical, Electrical and Humidity Sen…

The influence of relative humidity (RH) on quasistatic current-voltage ${(I-V)}$ characteristics of Bifidobacterium animalis subsp. lactis BB-12 thin layers have been studied for the first time. The value of electrical conductivity in 75$…

Broadband absorption in the visible spectrum is essential in optoelectronic applications that involve power conversion such as photovoltaics and photocatalysis. Most ultrathin broadband absorbers use parasitic plasmonic structures that…

We investigated a high-quality MgB$_{2}$ thin film with a thickness of $\sim$1000 nm on an Al$_{2}$O$_{3}$ substrate using optical spectroscopy. We measured the reflectance spectra of the film at various temperatures both below, and above,…

LaMg2H7 is a ternary wide band gap semiconductor that is a member of the hydride family. The bulk physical characteristics of the LaMg2H7 compound, including its structural, electronic band structure, elastic, thermal, and optical…

A key enabling technology for many liquid noble gas (LNG) detectors is the use of the common wavelength shifting medium tetraphenyl butadiene (TPB). TPB thin films are used to shift ultraviolet scintillation light into the visible spectrum…

Recent approaches to develop infrared photodetectors characterized by high sensitivities, broadband spectral coverage, easy integration with silicon electronics and low cost have been based on hybrid structures of transition metal…

In this investigation, we have used the density functional theory (DFT) to investigate several aspects of the half-Heusler compound HoPdBi. The following properties have been studied: spin polarized electronic properties, magnetic moment,…

We investigate the vibrational, optical, and electronic properties of insulating YbN thin films using Raman spectroscopy, Fourier-transform infrared spectroscopy, and electrical transport measurements, supported by density functional…

This study presents a comprehensive first-principles investigation of the optoelectronic and thermoelectric properties of aluminum antimonide (AlSb) in its cubic (F-43m) and hexagonal (P63mc) phases. Structural optimization was performed…

Black phosphorus has attracted interest as a material for use in optoelectronic devices due to many favorable properties such as a high carrier mobility, field-effect, and a direct bandgap that can range from 0.3 eV in its bulk crystalline…

Silicon photonics is being extended from the near-infrared (near-IR) window of 1.3-1.5 {\mu}m for optical fiber communications to the mid-infrared (mid-IR) wavelength-band of 2 {\mu}m or longer for satisfying the increasing demands in many…

Precise measurements of the in-plane microwave surface impedance of high-quality single crystals of Bi2212 and Tl2201 are used to probe the relaxation time of nodal quasiparticles in the d-wave superconducting state through a two-fluid…

Wide bandgap semiconductors have become the most attractive materials in optoelectronics in the last decade. Their wide bandgap and intrinsic properties have advanced the development of reliable photodetectors to selectively detect short…

The humidity sensitivity of n-type strontium-hexaferrite semiconductors, X-type (Sr2Co2Fe28O46) and Z-type (Sr3Co2Fe24O41), are investigated at room temperature. The contact and reactions between water and material surface are demonstrated…

Optical spectroscopy was used to study the electrodynamics and hidden transport properties of a BaFe$_{1.91}$Ni$_{0.09}$As$_{2}$ thin superconducting film. We analyzed the normal state data using a Drude-Lorentz model with two Drude…

While advancing a physics-based comprehensive photodetector-simulation model, we propose a novel device design of the mid-wavelength infrared nBn photodetectors by exploiting the inherit flexibility of the $InAs_{1-x}Sb_{x}$ ternary alloy…

We propose using THz frequency selective surfaces interrogated with THz subwavelength optical fibers as sensors for monitoring of the optical properties of thick films that are brought in contact with such surfaces. Changes in the test film…

Thin films of the wide band gap semiconductor $\beta$-Ga$_2$O$_3$ have a high potential for applications in transparent electronics and high power devices. However, the role of interfaces remains to be explored. Here, we report on…

High-entropy perovskite thin films, as the prototypical representative of the high-entropy oxides with novel electrical and magnetic features, have recently attracted great attention. Here, we reported the electronic structure and charge…

We grew a 2 micron thick film of single-phase BiFeO3 on a Si (100) substrate by pulsed laser deposition with a substrate temperature of 575 oC and an oxygen partial pressure of 0.06 mbar. X ray diffraction analysis indicated that the film…