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Moir\'e systems provide a highly tunable platform for engineering band structures and exotic correlated phases. Here, we theoretically study a model for a single layer of graphene subject to a smooth moir\'e electrostatic potential, induced…

强关联电子 · 物理学 2023-06-30 Jeyong Park , Lasse Gresista , Simon Trebst , Achim Rosch , Jinhong Park

Moir\'e structures in small-angle-twisted bilayers of two-dimensional semiconductors with a broken-symmetry interface form arrays of ferroelectric domains with periodically alternating out-of-plane polarization. Here, we propose a network…

介观与纳米尺度物理 · 物理学 2022-02-08 V. V. Enaldiev , F. Ferreira , V. I. Fal'ko

In minimally twisted bilayer graphene, a moir{\'e} pattern consisting of AB and BA stacking regions separated by domain walls forms. These domain walls are predicted to support counterpropogating topologically protected helical (TPH) edge…

We present comprehensive theoretical studies on the lattice relaxation and the electronic structures in general non-symemtric twisted trilayer graphenes. By using an effective continuum model, we show that the relaxed lattice structure…

介观与纳米尺度物理 · 物理学 2025-04-30 Naoto Nakatsuji , Takuto Kawakami , Mikito Koshino

Lattice relaxation in twistronic bilayers with close lattice parameters and almost perfect crystallographic alignment of the layers results in the transformation of moir\'e pattern into a sequence of preferential stacking domains and domain…

介观与纳米尺度物理 · 物理学 2023-11-30 M. A. Kaliteevsky , V. V. Enaldiev , V. I. Fal'ko

We theoretically study the electronic structure of small-angle twisted bilayer graphene with a large potential asymmetry between the top and bottom layers. We show that the emergent helical states known to appear on the triangular AB-BA…

介观与纳米尺度物理 · 物理学 2020-03-18 Bonnie Tsim , Nguyen N. T. Nam , Mikito Koshino

We generalize the continuum model for Moir\'e structures made from twisted graphene layers, in order to include lattice relaxation and the formation of channels at very small (marginal) twist angles. We show that a precise description of…

强关联电子 · 物理学 2020-02-19 Niels R. Walet , Francisco Guinea

At magic twisted angles, Dirac cones in twisted bilayer graphene (TBG) can evolve into flat bands, serving as a critical playground for the study of strongly correlated physics. When chiral symmetry is introduced, rigorous mathematical…

强关联电子 · 物理学 2023-10-11 Fan Cui , Congcong Le , Qiang Zhang , Xianxin Wu , Jiangping Hu , Ching-Kai Chiu

The domain walls between AB- and BA-stacked gapped bilayer graphene have garnered intense interest as they host topologically-protected, valley-polarised transport channels. The introduction of a twist angle between the bilayers and the…

介观与纳米尺度物理 · 物理学 2023-09-06 Nina C. Georgoulea , Nuala M. Caffrey , Stephen R. Power

Moir\'e superlattices created by the twisted stacking of two-dimensional crystalline monolayers can host electronic bands with flat energy dispersion in which interaction among electrons is strongly enhanced. These superlattices can also…

介观与纳米尺度物理 · 物理学 2021-05-18 Xiaomeng Liu , Cheng-Li Chiu , Jong Yeon Lee , Gelareh Farahi , Kenji Watanabe , Takashi Taniguchi , Ashvin Vishwanath , Ali Yazdani

Two dimensional moir\'e systems have recently emerged as a platform in which the interplay between topology and strong correlations of electrons play out in non-trivial ways. Among these systems, twisted double bilayer graphene (TDBG) is of…

介观与纳米尺度物理 · 物理学 2023-10-03 Debasmita Giri , Dibya Kanti Mukherjee , H. A. Fertig , Arijit Kundu

Moir\'e superstructures arising at twisted 2D interfaces have recently attracted the attention of the scientific community due to exotic quantum states and unique mechanical and tribological behaviors that they exhibit. Here, we predict the…

介观与纳米尺度物理 · 物理学 2025-01-16 Andrea Silva , Xiang Gao , Melisa M. Gianetti , Roberto Guerra , Nicola Manini , Andrea Vanossi , Michael Urbakh , Oded Hod

A twisted graphene bilayer exhibits a triangular Moir\'e pattern in the local stacking, that smoothly alternates between the three basic types AA', AB' and BA'. Under an interlayer bias U, the latter two types develop a spectral gap,…

介观与纳米尺度物理 · 物理学 2013-09-26 Pablo San-Jose , Elsa Prada

In the presence of a finite interlayer displacement field bilayer graphene has an energy gap that is dependent on stacking and largest for the stable AB and BA stacking arrangements. When the relative orientations between layers are twisted…

介观与纳米尺度物理 · 物理学 2018-07-11 Dmitry K. Efimkin , Allan H. MacDonald

Bilayer graphene and its thicker cousins with Rhombohedral stacking have attracted considerable attention because of their susceptibility to a variety of broken chiral symmetry states. Due to large density-of-states and quantized Berry…

强关联电子 · 物理学 2015-12-25 Fan Zhang

We investigate the domain wall network in twisted bilayer graphene (TBG) under the influence of interlayer bias and screening effect from the layered structure. Starting from the continuum model, we analyze the low-energy domain wall modes…

介观与纳米尺度物理 · 物理学 2024-07-22 Hao-Chien Wang , Chen-Hsuan Hsu

Chirality, a fundamental concept from biological molecules to advanced materials, is prevalent in nature. Yet, its intricate behavior in specific topological systems remains poorly understood. Here, we investigate the emergence of hidden…

介观与纳米尺度物理 · 物理学 2023-11-17 Seung-Gyo Jeong , Sang-Hoon Han , Tae-Hwan Kim , Sangmo Cheon

Moir\'e materials host a wealth of intertwined correlated and topological states of matter, all arising from flat electronic bands with nontrivial quantum geometry. A prominent example is the family of alternating-twist magic-angle graphene…

The parameters of the triangular domain wall network in bilayer graphene with a simultaneously twisted and biaxially stretched bottom layer are studied using the two-chain Frenkel-Kontorova model. It is demonstrated that if the graphene…

介观与纳米尺度物理 · 物理学 2020-01-30 Irina V. Lebedeva , Andrey M. Popov

Controlling the stacking and rotational registry of graphene layers provides a powerful handle on atomic-scale structural reconstructions that alter the electronic landscape at the nanoscale. In particular, this governs how massless and…

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