相关论文: Observation of e/4 charge at $\nu=1/2$ in GaAs
Fractional quantum Hall states (FQHSs) exemplify exotic phases of low-disorder two-dimensional (2D) electron systems when electron-electron interaction dominates over the thermal and kinetic energies. Particularly intriguing among the FQHSs…
Single-component fractional quantum Hall states (FQHSs) at even-denominator filling factors may host non-Abelian quasiparticles that are considered to be building blocks of topological quantum computers. Such states, however, are rarely…
We observe fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu=1/2$ in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayer-like charge distributions.…
The fractional quantum Hall effect, where plateaus in the Hall resistance at values of coexist with zeros in the longitudinal resistance, results from electron correlations in two dimensions under a strong magnetic field. Current flows…
Shot noise measurements were recently exploited to measure the charge of the quasiparticles in the Fractional Quantum Hall (FQH) regime. For fractional filling factors nu=1/3 and 2/5 of the first Landau level, fractional charges q=e/3 and…
In the extreme quantum limit, when the Landau level filling factor $\nu<1$, the dominant electron-electron interaction in low-disorder two-dimensional electron systems leads to exotic many-body phases. The ground states at even-denominator…
The fractional quantum Hall state (FQHS) observed in the lowest Landau level at filling factor $\nu=1/2$ in wide quantum wells has been enigmatic for decades because the two-dimensional electron system (2DES) has a bilayer charge…
The even-denominator fractional quantum Hall states (FQHSs) in half-filled Landau levels are generally believed to host non-Abelian quasiparticles and be of potential use in topological quantum computing. Of particular interest is the…
The charge of quasiparticles in a fractional quantum Hall (FQH) liquid, tunneling through a partly reflecting constriction with transmission t, was determined via shot noise measurements. In the nu=1/3 FQH state, a charge smoothly evolving…
We investigate shot noise at {\it finite temperatures} induced by the quasi-particle tunneling between fractional quantum Hall (FQH) edge states. The resulting Fano factor has the peak structure at a certain bias voltage. Such a structure…
We report an experimental investigation of fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu$ = 1/2 in very high quality wide GaAs quantum wells, and at very high magnetic fields up to 45 T. The…
We report the evolution of the fractional quantum Hall state (FQHS) at even-denominator filling factor $\nu=7/2$ in wide GaAs quantum wells in which electrons occupy two electric subbands. The data reveal subtle and distinct evolutions as a…
The existence of fractional charges carrying the current is experimentally demonstrated. Using a 2-D electron system in high magnetic field, we measure the shot noise associated with tunneling in the fractional quantum Hall regime at Landau…
The fractional quantum Hall (FQH) effect is a macroscopic manifestation of strong electron-electron interactions. Even denominator FQH states (FQHSs) at half-filling are particularly interesting as they are predicted to host non-Abelian…
The charge of fractionally charged quasiparticles, proposed by Laughlin to explain the fractional quantum Hall effect (FQHE), was recently verified by measurements. Charge q=e/3 and e/5 (e is the electron charge), at filling factors nu=1/3…
We report the observation of an even-denominator fractional quantum Hall (FQH) state at $\nu=1/4$ in a high quality, wide GaAs quantum well. The sample has a quantum well width of 50 nm and an electron density of $n_e=2.55\times10^{11}$…
We have experimentally identified fractional quasiparticle creation in a tunneling process through a local fractional quantum Hall (FQH) state. The local FQH state is prepared in a low-density region near a quantum point contact (QPC) in an…
We report the observation of developing fractional quantum Hall states at Landau level filling factors $\nu = 1/2$ and 1/4 in electron systems confined to wide GaAs quantum wells with significantly $asymmetric$ charge distributions. The…
An important development in the field of the fractional quantum Hall effect has been the proposal that the 5/2 state observed in the Landau level with orbital index $n = 1$ of two dimensional electrons in a GaAs quantum well originates from…
Termination of the fractional quantum Hall states (FQHSs) and the emergence of Wigner crystal phases at very small Landau level filling factors ($\nu$) have been of continued interest for decades. Recently, in ultra-high-quality, dilute…