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Shuttling spin qubits in systems with large spin-orbit interaction (SOI) can cause errors during motion. However, in this work, we demonstrate that SOI can be harnessed to implement an arbitrary high-fidelity two-qubit (2Q) gate. We…

介观与纳米尺度物理 · 物理学 2025-08-13 D. Fernández-Fernández , Y. Matsumoto , L. M. K. Vandersypen , G. Platero , S. Bosco

We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can…

介观与纳米尺度物理 · 物理学 2015-06-29 D. M. Zajac , T. M. Hazard , X. Mi , K. Wang , J. R. Petta

Controlled adiabatic transfer of a single electron through a chain of quantum dots has been recently achieved in GaAs and Si/SiGe based quantum dots, opening prospects for turning stationary spin qubits into mobile ones, and solving in this…

介观与纳米尺度物理 · 物理学 2020-01-22 Jan Krzywda , Łukasz Cywiński

Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but…

Electron spins in silicon quantum dots provide a promising route towards realising the large number of coupled qubits required for a useful quantum processor. At present, the requisite single-shot spin qubit measurements are performed using…

The transport of quantum information between different nodes of a quantum device is among the challenging functionalities of a quantum processor. In the context of spin qubits, this requirement can be met by coherent electron spin shuttling…

介观与纳米尺度物理 · 物理学 2024-11-28 Florian Ginzel , Adam R. Mills , Jason R. Petta , Guido Burkard

Electron spins in silicon quantum dots are excellent qubits due to their long coherence times, scalability, and compatibility with advanced semiconductor technology. Although high gate fidelities can be achieved with spin qubits, charge…

介观与纳米尺度物理 · 物理学 2024-12-13 Feiyang Ye , Ammar Ellaboudy , Dylan Albrecht , Rohith Vudatha , N. Tobias Jacobson , John M. Nichol

Transistors are key elements for enabling computational hardware in both classical and quantum domains. Here, we propose a voltage-gated spin transistor using itinerant electrons in the Hubbard model which acts at the level of single…

量子物理 · 物理学 2021-12-03 Rozhin Yousefjani , Sougato Bose , Abolfazl Bayat

The development of a working quantum computer utilizing electron spin states as qubits is a major goal for many theorists and experimentalists. The future applications of quantum information technology would also require a reliable method…

介观与纳米尺度物理 · 物理学 2012-09-06 Tuukka Hiltunen , Ari Harju

The Quantum Charge-Coupled Device (QCCD) architecture is a modular design to expand trapped-ion quantum computer that relies on the coherent shuttling of qubits across an array of segmented electrodes. Leveraging trapped ions for their long…

量子物理 · 物理学 2025-05-05 Chenghong Zhu , Xian Wu , Jingbo Wang , Xin Wang

By utilizing the site-dependent spin quantization axis in semiconductor quantum dot (QD) arrays, shuttling-based spin qubit gates have become an appealing approach to realize scalable quantum computing due to the circumvention of using…

介观与纳米尺度物理 · 物理学 2026-02-17 Zhi-Hai Liu , Xiao-Fei Liu , H. Q. Xu

Universal quantum computation requires high fidelity single qubit rotations and controlled two qubit gates. Along with high fidelity single qubit gates, strong efforts have been made in developing robust two qubit logic gates in…

介观与纳米尺度物理 · 物理学 2016-10-20 D. R. Ward , Dohun Kim , D. E. Savage , M. G. Lagally , R. H. Foote , Mark Friesen , S. N. Coppersmith , Mark A. Eriksson

We propose a scheme for implementing quantum gates and entanglement between spin qubits in the outer dots of a triple-dot system with an empty central dot. The voltage applied to the central dot can be tuned to realize the gate. Our scheme…

量子物理 · 物理学 2015-03-19 Jose Garcia Coello , Sougato Bose

We demonstrate a two-dimensional 11-zone ion trap array, where individual laser-cooled atomic ions are stored, separated, shuttled, and swapped. The trap geometry consists of two linear rf ion trap sections that are joined at a 90 degree…

量子物理 · 物理学 2007-05-23 W. K. Hensinger , S. Olmschenk , D. Stick , D. Hucul , M. Yeo , M. Acton , L. Deslauriers , J. Rabchuk , C. Monroe

Electron spins in silicon quantum dots are excellent qubits because they have long coherence times, high gate fidelities, and are compatible with advanced semiconductor manufacturing techniques. The valley degree of freedom, which results…

介观与纳米尺度物理 · 物理学 2023-03-27 Xinxin Cai , Elliot J. Connors , John M. Nichol

Semiconductor hole-spin qubits offer a promising route to quantum computation due to their weak hyperfine interaction, and strong intrinsic spin-orbit coupling enabling electric control of qubits. Scalable architectures, however, require…

量子物理 · 物理学 2026-05-15 Madhumita Sarkar , Roopayan Ghosh , Charles G. Smith , Maksym Myronov , Sougato Bose

A crucial requirement for quantum information processing is the realization of multiple-qubit quantum gates. Here, we demonstrate an electron spin based all-electrical two-qubit gate consisting of single spin rotations and inter-dot spin…

量子物理 · 物理学 2015-05-30 R. Brunner , Y. -S. Shin , T. Obata , M. Pioro-Ladrière , T. Kubo , K. Yoshida , T. Taniyama , Y. Tokura , S. Tarucha

Semiconductor quantum-dot spin qubits are a promising platform for quantum computation, because they are scalable and possess long coherence times. In order to realize this full potential, however, high-fidelity information transfer…

介观与纳米尺度物理 · 物理学 2021-04-14 Yadav P. Kandel , Haifeng Qiao , Saeed Fallahi , Geoffrey C. Gardner , Michael J. Manfra , John M. Nichol

Mobile spin qubit architectures promise flexible connectivity for efficient quantum error correction and relaxed device layout constraints, but their viability rests on preserving spin coherence during transport. While shuttling transforms…

Long-distance fast and precise transfer of charge in semiconductor nanostructures is one of the goals for scalable electronic devices. We study theoretically the control of shuttling of an electron along a linear chain of semiconductor…

介观与纳米尺度物理 · 物理学 2022-12-07 María E. Rus , Rodolfo H. Romero , Sergio S. Gomez