相关论文: Photonic Interactions with Semiconducting Barrier …
The inclusion of semiconducting material within a composite barrier enables the perfectly uniform propagation of surface ionization waves (SIW) in air at atmospheric pressure regardless of the polarity of the applied electric field, unlike…
Nanosecond Surface Dielectric Barrier Discharge (ns-SDBDs) are a class of plasma actuators that utilize a high-voltage pulse of nanosecond duration between two surface-mounted electrodes to create an electrical breakdown of air, along with…
Silicon is an extremely attractive material platform for integrated optics at telecommunications wavelengths, particularly for integration with CMOS circuits. Developing detectors and electrically pumped lasers at telecom wavelengths are…
We demonstrate cryogenic, electrically-injected, waveguide-coupled Si light-emitting diodes (LEDs) operating at 1.22 $\mu$m. The active region of the LED consists of W centers implanted in the intrinsic region of a $p$-$i$-$n$ diode. The…
Advances in silicon (Si) photonics at submicrometer wavelengths are unlocking new opportunities to realize miniaturized, scalable optical systems for biophotonics, quantum information, imaging, spectroscopy, and displays. Addressing this…
Bare reverse biased silicon photodiodes were exposed to 3eV He+, Ne+, Ar+, N2+, N+ and H2O+ ions. In all cases an increase of the reverse current through the diode was observed. This effect and its dependence on the ionization energy of the…
Single photon detection is important for a wide range of low-light applications, including quantum information processing, spectroscopy, and light detection and ranging (LiDAR). A key challenge in these applications has been to integrate…
The perturbation of a semiconductor from the thermodynamic equilibrium often leads to the display of nonlinear dynamics and formation of spatiotemporal patterns due to the spontaneous generation of competing processes. Here, we describe the…
Supercapacitors, S-C - capacitors that take advantage of the large capacitance at the interface between an electrode and an electrolyte - have found many short-term energy applications. We concentrate here on optically induced, electrical…
Phonon assisted photoluminescence provides a direct window into exciton phonon interactions in low dimensional semiconductors. Using fully ab initio many body perturbation theory, including finite momentum Bethe Salpeter calculations, we…
A laser multicharged ion source was used to perform interfacial treatment of the 4H-SiC/ SiO2 interface using B and Ba ions. A Q-switched Nd:YAG laser (wavelength {\lambda} = 1064 nm, pulse width {\tau} = 7 ns, and fluence F = 135 J/cm2)…
This work demonstrates photon emission gain, i.e., emission of multiple photons per injected electron, through impact excitation in Er-doped silicon light-emitting diodes (LEDs). Conventional methods for exciting Er ions in silicon suffer…
The optical and electronic properties of 2D semiconductors are intrinsically linked via the strong interactions between optically excited bound species and free carriers. Here we use near-field scanning microwave microscopy (SMM) to image…
Excitons in atomically-thin semiconductors interact very strongly with electromagnetic radiation and are necessarily close to a surface. Here, we exploit the deep-subwavelength confinement of surface plasmon polaritons (SPPs) at the edge of…
Silicon's inherently indirect bandgap severely limits its radiative efficiency, posing a fundamental challenge to the development of practical silicon-based light sources. While strategies such as nanoscale confinement of electrons and…
The bottleneck in achieving fully integrated silicon photonics lies in silicon-based light-emitting devices that are compatible with standard CMOS technology. Dislocation loops by implanting boron into silicon and annealing represents an…
Opto-mechanical interactions in planar photonic integrated circuits draw great interest in basic research and applications. However, opto-mechanics is practically absent in the most technologically significant photonics platform: silicon on…
Light-matter interaction in optomechanical systems is the foundation for ultra-sensitive detection schemes [1,2] as well as the generation of phononic and photonic quantum states [3-10]. Electromechanical systems realize this optomechanical…
Electrons at the surface of a plasma that is irradiated by a laser with intensity in excess of $10^{23}~\mathrm{W}\mathrm{cm}^{-2}$ are accelerated so strongly that they emit bursts of synchrotron radiation. Although the combination of high…
We show that optically pumped semiconductors can exhibit superconductivity. We illustrate this phenomenon in the case of a two-band semiconductor tunnel-coupled to broad-band reservoirs and driven by a continuous wave laser. More…