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Fractional Chern insulators (FCIs) in ideal flat bands with Chern number $C$ are commonly understood as color-entangled states constructed from $C$ copies of the lowest Landau level. In realistic moir\'e systems, however, the band geometry…

介观与纳米尺度物理 · 物理学 2025-11-25 Moru Song , Kai Chang

Fractional Chern insulators (FCIs) -- the lattice analog of fractional quantum Hall states -- form as fractionalized quasiparticles emerge in a partially-filled Chern band. This fractionalization is driven by the interplay of electronic…

Fractional Chern insulators (FCIs) are lattice generalizations of the conventional fractional quantum Hall effect (FQHE) in two-dimensional (2D) electron gases. They typically arise in a 2D lattice without time-reversal symmetry when a…

介观与纳米尺度物理 · 物理学 2023-03-03 Zhao Liu , Emil J. Bergholtz

Fractional Chern insulators (FCIs) are lattice analogues of fractional quantum Hall states that may provide a new avenue toward manipulating non-abelian excitations. Early theoretical studies have predicted their existence in systems with…

In the presence of strong electronic interactions, a partially filled Chern band may stabilize a fractional Chern insulator (FCI) state, the zero-field analog of the fractional quantum Hall phase. While FCIs have long been hypothesized,…

强关联电子 · 物理学 2024-10-15 Gal Shavit , Yuval Oreg

The discovery of Fractional Chern Insulators (FCIs) in twisted bilayer MoTe$_2$ has sparked significant interest in fractional topological matter without external magnetic fields. Unlike the flat dispersion of Landau levels, moir\'e…

强关联电子 · 物理学 2024-10-30 Tianhong Lu , Luiz H. Santos

We construct a two-band lattice model whose bands can carry the Chern numbers C=0,pm1,pm2. By means of numerical exact diagonalization, we show that the most favorable situation that selects fractional Chern insulators (FCIs) is not…

强关联电子 · 物理学 2012-11-26 Adolfo G. Grushin , Titus Neupert , Claudio Chamon , Christopher Mudry

A flat band with Chern number $C=0$, and well isolated from the rest of Hilbert space by a gap much larger than interaction strength, is a context that has not been regarded as relevant for fractional quantum Hall physics. In this work, we…

介观与纳米尺度物理 · 物理学 2025-12-24 Zuzhang Lin , Hongyu Lu , Wenqi Yang , Dawei Zhai , Wang Yao

Fractional Chern insulators (FCIs) showing a transport effect with fractionally quantized Hall plateaus emerging under zero magnetic field, provide a radically new opportunity to engineer topological quantum electronics. By construction of…

Recent experiments on bilayer graphene twisted near the magic angle have observed spontaneous integer quantum Hall states in the presence of an aligned hexagonal boron nitride (hBN) substrate. These states arise from valley ferromagnetism,…

强关联电子 · 物理学 2020-06-18 Patrick J. Ledwith , Grigory Tarnopolsky , Eslam Khalaf , Ashvin Vishwanath

We discuss the low-energy limit of three-orbital Kondo-lattice and Hubbard models describing $t_{2g}$ orbitals on a triangular lattice near half-filling. We analyze how very flat bands with non-trivial topological character, a Chern number…

强关联电子 · 物理学 2015-03-20 Stefanos Kourtis , Jörn W. F. Venderbos , Maria Daghofer

We propose the realization of interaction-driven insulators in periodically strained monolayer graphene and transition metal dichalcogenides (TMDs). Through extensive many-body exact diagonalization, we provide compelling evidence for…

强关联电子 · 物理学 2024-12-24 Yuchen Liu , Zheng Zhu

The fractional Chern insulators (FCIs) observed in pentalayer rhombohedral graphene/hexagonal boron nitride superlattices have a unique origin contrary to theoretical expectations: their non-interacting band structure is gapless, unlike…

强关联电子 · 物理学 2025-09-26 Jiabin Yu , Jonah Herzog-Arbeitman , Yves H. Kwan , Nicolas Regnault , B. Andrei Bernevig

We propose a generalized composite fermion (CF) theory for fractional Chern insulators (FCIs) by adapting the quantum mechanics approach of CFs. The theoretical framework naturally produces an effective CF Hamiltonian and a wavefunction…

强关联电子 · 物理学 2025-09-12 Hao Jin , Junren Shi

We study two models for spinless fermions featuring topologically non-trivial bands characterized by Chern numbers $C=\pm1$ at fractional filling. Using exact diagonalization, we show that, even for infinitely strong nearest-neighbor…

强关联电子 · 物理学 2014-04-02 Stefanos Kourtis , Titus Neupert , Claudio Chamon , Christopher Mudry

In contrast to the fractional quantum Hall (FQH) effect, where electron density fixes the applied magnetic field, fractional Chern insulators (FCIs) can realize FQH states in comparatively weak or even zero magnetic fields. Previous…

The understanding of fractional Chern insulators (FCIs) has been deeply guided by band topology and quantum geometry. Here, we introduce a real-space theoretical framework in which FCIs are understood in terms of composite bosons, local…

强关联电子 · 物理学 2026-02-17 Guangyu Yu , Zheng Zhu

Fractionally filled Chern bands with strong interactions may give rise to fractional Chern insulator (FCI) states, the zero-field analogue of the fractional quantum Hall effect. Recent experiments have demonstrated the existence of FCIs in…

介观与纳米尺度物理 · 物理学 2024-08-15 Jiabin Yu , Jonah Herzog-Arbeitman , Minxuan Wang , Oskar Vafek , B. Andrei Bernevig , Nicolas Regnault

We review various features of interacting Abelian topological phases of matter in two spatial dimensions, placing particular emphasis on fractional Chern insulators (FCIs) and fractional topological insulators (FTIs). We highlight aspects…

强关联电子 · 物理学 2015-11-17 Titus Neupert , Claudio Chamon , Thomas Iadecola , Luiz H. Santos , Christopher Mudry

The recent theoretical discovery of fractional Chern insulators (FCIs) has provided an important new way to realize topologically ordered states in lattice models. In earlier works, on-site and nearest neighbor Hubbard-like interactions…

强关联电子 · 物理学 2013-11-05 Zhao Liu , Emil J. Bergholtz , Eliot Kapit
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