相关论文: Self-Consistent Model for Gate Control of Narrow-,…

The tight-binding model of bilayer graphene is used to find the gap between the conduction and valence bands, as a function of both the gate voltage and as the doping by donors or acceptors. The total Hartree energy is minimized and the…

Precise and ultrafast control of electronic band structures is a central challenge for advancing quantum functional materials and devices. Conventional approaches--such as chemical doping, lattice strain, or external gating--offer robust…

A tight binding model is used to calculate the band structure of bilayer graphene in the presence of a potential difference between the layers that opens a gap $\Delta$ between the conduction and valence bands. In particular, a self…

For materials which are incorrectly predicted by density functional theory to be metallic, an iterative procedure must be adopted in order to perform GW calculations. In this paper we test two iterative schemes based on the quasi-particle…

Twisted $N$-layer graphene (TNG) moir\'e structures have recently been shown to exhibit robust superconductivity similar to twisted bilayer graphene (TBG). In particular for $N=4$ and $N=5$, the phase diagram features a superconducting…

We study the gate voltage induced gap that occurs in graphene bilayers using \textit{ab initio} density functional theory. Our calculations confirm the qualitative picture suggested by phenomenological tight-binding and continuum models. We…

Epitaxially-grown semiconductor heterostructures give the possibility to tailor the potential landscape for the carriers in a very controlled way. In planar lattice-matched heterostructures, the potential has indeed a very simple and easily…

Using the self-consistent Hartree-Fock approximation, we study the compressibility instability of the interacting electrons in bilayer graphene. The chemical potential and the compressibility of the electrons can be significantly altered by…

Bandgaps in layered materials are critical for enabling functionalities such as tunable photodetection, efficient energy conversion, and nonlinear optical responses, which are essential for next-generation photonic and quantum devices. Gap…

Theoretical progress in graphene physics has largely relied on the application of a simple nearest-neighbor tight-binding model capable of predicting many of the electronic properties of this material. However, important features that…

Varying the quantum-well width in an HgTe/CdTe heterostructure allows to realize normal and inverted semiconducting band structures, making it a prototypical system to study two-dimensional (2D) topological-insulator behavior. We have…

The equilibrium properties and interminiband transitions for Hartree-interacting two-dimensional electron gas in a one-dimensional chain of planar quantum rings subjected to a transverse homogeneous magnetic field are examined theoretically…

The occurrence of superconducting and insulating phases is well-established in twisted graphene bilayers, and they have also been reported in other arrangements of graphene layers. We investigate three such arrangements: untwisted AB…

We present self-consistent calculations of electron transport in graphene nanoconstrictions within the Hartree approximation. We consider suspended armchair ribbons with V-shaped constrictions having perfect armchair or zigzag edges as well…

We present a theoretical investigation of the voltage-driven metal insulator transition based on solving coupled Boltzmann and Hartree-Fock equations to determine the insulating gap and the electron distribution in a model system -- a one…

The density functional approach in the Kohn-Sham approximation is widely used to study properties of many-electron systems. Due to the nonlinearity of the Kohn-Sham equations, the general self-consistence searching method involves…

Ga$_2$O$_3$ is a wide-bandgap material of interest for a wide variety of devices, many of these requiring heterostructures, for instance to achieve carrier confinement. A common method to create such heterostructures is to alloy with…

At partial filling of a flat band, strong electronic interactions may favor gapped states harboring emergent topology with quantized Hall conductivity. Emergent topological states have been found in partially filled Landau levels and…

Recently, intriguing physical properties have been unraveled in anisotropic layered semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low crystallographic symmetry and thus a…

Band structures of topological insulators are characterized by non-local topological invariants. Consequently, proposals for the experimental detection using local probes are rare. A recent paper [Slager et al., Phys. Rev. B 92, 085126…