相关论文: Controllable Domain Wall Memories with Magnetic To…
A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of…
We study current-induced dynamics of spin textures in thin magnetic nanowires. We derive effective equations of motion describing the dynamics of the domain-wall soft modes associated with topological defects. Because the magnetic domain…
Controlling magnetic order in magnetic topological insulators (MTIs) is a key to developing spintronic applications with MTIs, and is commonly achieved by changing the magnetic doping concentration, which inevitably affects…
The discovery and precise manipulation of atomic-size conductive ferroelectric domain defects, such as geometrically confined walls, offer new opportunities for a wide range of prospective electronic devices, and the so-called walltronics…
We report on the controllable pinning of domain walls in stripes with perpendicular magnetic anisotropy by magnetostatic coupling to magnetic vortices in disks located above the stripe. Pinning mechanisms and depinning fields are reported.…
In this work we perform investigations of the competition between domain-wall pinning and attraction by anti-notches and finite device borders. The conditions for optimal geometries, which can attain a stable domain-wall pinning, are…
We demonstrate that the stray magnetic field generated beneath magnetic vortex cores can be used to generate nano-scale, localized pinning sites for magnetic domain walls in an underlying, perpendicularly magnetized nanostrip. Moreover, the…
We carry out large-scale micromagnetic simulations which demonstrate that due to topological constraints, internal domain walls (Bloch lines) within extended domain walls are more robust than domain walls in nanowires. Thus, the possibility…
Domain wall propagation in cylindrical nanowires with modulations of diameter is a key phenomenon to design physics-oriented devices, or a disruptive three-dimensional magnetic memory. This chapter presents a combination of analytical…
We demonstrate that for multilayered magnetic nanowires, where the thickness and composition of the individual layers has been carefully chosen, domain walls can be pinned at non-topographic sites created purely by ion irradiation in a…
The surface state of a 3D topological insulator (3DTI) is a spin-momentum locked conductive state, whose large spin hall angle can be used for the energy-efficient spin orbit torque based switching of an overlying ferromagnet (FM).…
Topology is a powerful tool for categorizing magnetization textures by defining a topological index in both two-dimensional (2D) systems, such as thin films or curved surfaces, and in 3D bulk systems. In the emerging field of 3D…
The external controllability of the magnetic properties in topological insulators would be important both for fundamental and practical interests. Here we predict the electric-field control of ferromagnetism in a thin film of insulating…
Spin-orbit torque (SOT) enables efficient electrical control of magnetization, offering a pathway towards low-power spintronic devices. Magnetic topological insulators (TIs), with spin-momentum-locked surface states and intrinsic…
We investigate the magnetization dynamics that arise when a thin-film ferromagnet is deposited on a topological insulator (TI), focusing in particular on domain-wall motion via current and the possibility of a spin-wave torque acting on the…
Fast and efficient switching of nanomagnets is one of the main challenges in the development of future magnetic memories. We numerically investigate the evolution of the static and dynamic spin wave (SW) magnetization in short (50-400 nm…
Electric-field control of magnetization dynamics is fundamentally and technologically important for future spintronic devices. Here, based on electric-field control of both magnetic anisotropy and spin--orbit torque, two distinct methods…
Realising the promise of next-generation magnetic nanotechnologies is contingent on the development of novel methods for controlling magnetic states at the nanoscale. There is currently demand for simple and flexible techniques to access…
To design fast memory devices, we need material combinations which can facilitate fast read and write operation. We present a heterostructure comprising a two-dimensional (2D) magnet and a 2D topological insulator (TI) as a viable option…
We study field-induced domain wall motion in permalloy nanowires with vertically etched nanotrench pinning site. Micromagnetic simulations and electrical measurements are employed to characterize the pinning potential at the nanotrench. It…