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相关论文: Amorphization-Mediated Si-I to Si-V Phase Transiti…

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Our investigations on porous Si show that on increase of pressure it undergoes crystalline phase transitions instead of pressure induced amorphization - claimed earlier, and the amorphous phase appears only on release of pressure. This…

材料科学 · 物理学 2010-07-23 Nandini Garg , K. K. Pandey , K. V. Shanavas , C. A. Betty , Surinder M Sharma

The integration of III-V on silicon is still a hot topic as it will open up a way to co-integrate Si CMOS logic with photonic vices. To reach this aim, several hurdles should be solved, and more particularly the generation of antiphase…

Structurally disordered materials continue to pose fundamental questions, including that of how different disordered phases ("polyamorphs") can coexist and transform from one to another. As a widely studied case, amorphous silicon (a-Si)…

Pressure-induced phase transformation occurs during silicon (Si) wafering processes. \b{eta}-tin (Si-II) phase is formed at high pressures, followed by the transformation to Si-XII, Si-III or/and amorphous Si ({\alpha}-Si) phases during the…

Crystalline to amorphous phase transformation during initial lithiation in (100) silicon-wafers is studied in an electrochemical cell with lithium metal as the counter and reference electrode. It is demonstrated that severe stress jumps…

Hydrogenation of amorphous silicon (a-Si:H) is critical for reducing defect densities, passivating mid-gap states and surfaces, and improving photoconductivity in silicon-based electro-optical devices. Modelling the atomic scale structure…

The behavior of $\alpha$-quartz under hydrostatic and non-hydrostatic high-pressure conditions has been investigated in Molecular Dynamics simulations of silica in order to clarify the role of non-hydrostatic stresses in the amorphization…

凝聚态物理 · 物理学 2009-10-28 James Badro , Jean-Louis Barrat , Philippe Gillet

In spite of remarkable developments in the field of advanced materials, silicon remains one of the foremost semiconductors of the day. Of enduring relevance to science and technology is silicon's nanomechanical behaviour including phase…

材料科学 · 物理学 2022-08-09 Rafał Abram , Dariusz Chrobak , Jesper Byggmästar , Kai H. Nordlund , Roman Nowak

Characteristic shock effects in silica serve as a key indicator of historical impacts at geological sites. Despite this geological significance, atomistic details of structural transformations under high pressure and shock compression…

材料科学 · 物理学 2025-04-16 Linus C. Erhard , Christoph Otzen , Jochen Rohrer , Clemens Prescher , Karsten Albe

We use Raman spectroscopy in tandem with transmission electron microscopy and DFT simulations to show that extreme (GPa) pressure converts the phase of silicon nanowires from cubic (Si-I) to hexagonal (Si-IV) while preserving the nanowire's…

材料科学 · 物理学 2016-11-06 Bennett E. Smith , Xuezhe Zhou , Paden B. Roder , Evan H. Abramson , Peter J. Pauzauskie

The structural relaxation of amorphous materials is described as arising from the superposition of elementary processes with varying activation energies. We show that it is possible to obtain the kinetic parameters of these processes from…

材料科学 · 物理学 2009-01-19 Pere Roura , Jordi Farjas

The structural features of the interface between the cystalline and amorphous phases of Si solid are studied in simulations based on a combination of empirical interatomic potentials and a nonorthogonal tight-binding model. The…

材料科学 · 物理学 2009-10-31 N. Bernstein , M. J. Aziz , E. Kaxiras

Silicon exhibits several metastable allotropes which recently attracted attention in the quest for materials with superior (e.g. optical) properties, compatible with Si technology. In this work we shed light on the atomic-scale mechanisms…

材料科学 · 物理学 2026-03-06 Fabrizio Rovaris , Anna Marzegalli , Francesco Montalenti , Emilio Scalise

Some results on damage build up in, and amorphization of, Si, induced by 25-30 keV Al$_5^-$, Si$_5^-$ and Cs$^-$ ions, at room temperature, are reported. We show that at low energy, amorphization is a nucleation and growth process, based on…

材料科学 · 物理学 2009-02-16 H. P. Lenka , U. M. Bhatta , P. K. Kuiri , G. Sahu , B. Joseph , B. Satpati , D. P. Mahapatra

Amorphous insulators have localized wave functions that decay with the distance $r$ following exp($-r/\zeta$). Since nanoscale conduction is not excluded at $r<\zeta$, one may use amorphous insulators and take advantage of their size effect…

介观与纳米尺度物理 · 物理学 2019-02-21 Yang Lu , I-Wei Chen

The negatively-charged silicon-vacancy (SiV$^-$) color center in diamond has recently emerged as a promising system for quantum photonics. Its symmetry-protected optical transitions enable creation of indistinguishable emitter arrays and…

Layered transition-metal trichalcogenides have become one of the research frontiers as two-dimensional magnets and candidate materials used for phase-change memory devices. Herein we report the high-pressure synchrotron X-ray diffraction…

Complex intermetallic materials known as MAX phases exhibit exceptional properties from both metals and ceramics, largely thanks to their nanolayered structure. With high-resolution scanning transmission electron microscopy supported by…

材料科学 · 物理学 2023-03-17 Julien Guénolé , Vincent Taupin , Maxime Vallet , Wenbo Yu , Antoine Guitton

The molecular dynamics method is applied to simulate the recrystallization of an amorphous/crystalline silicon interface. The atomic structure of the amorphous material is constructed with the method of Wooten, Winer, and Weaire. The…

To assess the potential of amorphous Si (a-Si) as an anode for Li, Na, and Mg-ion batteries, the energetics of Li, Na, and Mg atoms in a-Si are computed from first-principles and compared to those in crystalline Si (c-Si). It is shown that…

材料科学 · 物理学 2014-12-30 Fleur Legrain , Oleksandr I. Malyi , Sergei Manzhos
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