相关论文: Valley Order in Moir\'e Topological Insulators
The fractional quantum Hall effect has recently been shown to exist in heterostructures of van der Waals materials without an externally applied magnetic field, e.g. in twisted bilayers of MoTe$_2$. These fractional Chern insulators break…
The recent observation of the fractional quantum anomalous Hall effect in moir\'e fractional Chern insulators provides an opportunity to investigate zero magnetic field anyons. To potentially realize non-Abelian anyons, one approach is to…
At partial filling of a flat band, strong electronic interactions may favor gapped states harboring emergent topology with quantized Hall conductivity. Emergent topological states have been found in partially filled Landau levels and…
Moir\'e heterobilayer transition metal dichalcogenides (TMDs) emerge as an ideal system for simulating the single-band Hubbard model and interesting correlated phases have been observed in these systems. Nevertheless, the moir\'e bands in…
One salient feature of systems with Moir\'{e} superlattice is that, Chern number of "minibands" originating from each valley of the original graphene Brillouin zone becomes a well-defined quantized number because the miniband from each…
An experiment in moir\'e MoTe$_2$ bilayers reported the first observation of a topologically ordered state with zero Hall conductivity and half of the edge conductance of a standard time-reversal invariant quantum spin Hall insulator. This…
We explore the phase diagrams of moir\'e materials in search of a new class of intervalley-coherent correlated insulating state: the Chern texture insulator (CTI). This phase of matter, proposed in a companion paper, breaks valley $U(1)$…
At a certain "magic" relative twist angle of two graphene sheets it remains a challenge to obtain a detailed description of the proliferation of correlated topological electronic phases and their filling-dependence. We perform a…
We predict that in a twisted homobilayer of transition-metal dichalcogenide MoS$_2$, spin-orbit coupling in the conduction band states from $\pm K$ valleys can give rise to moir\'{e} flat bands with nonzero Chern numbers in each valley. The…
Moir\'e transition metal dichalcogenide (TMD) materials provide an ideal playground for studying the combined interplay of strong interactions and band-topology over a range of electronic fillings. Here we investigate the panoply of…
Chern insulators, which are the lattice analogs of the quantum Hall states, can potentially manifest high-temperature topological orders at zero magnetic field to enable next-generation topological quantum devices. To date, integer Chern…
Motivated by a recent experiment reporting the fractional quantum spin Hall effect in twisted ${\rm MoTe}_2$, we investigate microscopically the prospects of realizing exotic topologically ordered states beyond conventional quantum Hall…
We study the edge spectrum of twisted sheets of single layer and bilayer graphene in cases where the continuum model predicts a valley Chern insulator -- an insulating state in which the occupied moir\'e mini-bands from each valley have a…
Conventional theories for Mott insulators involve well-localized electronic orbitals. This picture fails in the presence of topological obstructions in Chern bands which prevent the formation of exponentially localized orbitals and are…
We show that moir\'e bands of twisted homobilayers can be topologically nontrivial, and illustrate the tendency by studying valence band states in $\pm K$ valleys of twisted bilayer transition metal dichalcogenides, in particular, bilayer…
Graphene-based moire superlattices exhibit novel quantum phenomena driven by pronounced interactions, leading to topological corrected states like orbital Chern insulators exhibiting quantum anomalous Hall effect (QAHE). Typically,…
The study of topological property of band insulators is an interesting branch of condensed matter physics. Two types of topologically nontrivial insulators have been extensively studied. The first type is characterized by a nonzero TKNN…
We use a lowest Landau level model to study the recent observation of an anomalous Hall effect in twisted bilayer graphene. This effective model is rooted in the occurrence of Chern bands which arise due to the coupling between the graphene…
Recently Chern insulators with Chern number $C=1$ and $C=2$ in zero (or very small) magnetic field have been observed in two moire graphene systems: twisted bilayer graphene and ABC trilayer graphene, both aligned with a hexagonal…
Moir\'e materials provide fertile ground for the correlated and topological quantum phenomena. Among them, the quantum anomalous Hall (QAH) effect, in which the Hall resistance is quantized even under zero magnetic field, is a direct…