相关论文: Tunneling Magnetoresistance Effect in Altermagnets
Large magnetoresistance effect controlled by electric field rather than magnetic field or electric current is a preferable routine for designing low power consumption magnetoresistance-based spintronic devices. Here we propose an…
Motivated by recent experiments, where the tunnel magnetoresitance (TMR) of a spin valve was measured locally, we theoretically study the distribution of TMR along the surface of magnetized electrodes. We show that, even in the absence of…
The temperature and voltage dependence of spin transport is theoretically investigated in a new type of magnetic tunnel junction, which consists of two ferromagnetic outer electrodes separated by a ferromagnetic barrier and a nonmagnetic…
We have developed a tunneling theory to describe the temperature dependence of tunneling magnetoresistance (TMR) of the magnetic tunnel junctions (MTJs) with periodic grating barrier. Through the Patterson function approach, the theory can…
Spin Hall magnetoresistance (SMR) refers to a resistance change in a metallic film reflecting the magnetization direction of a magnet attached to the film. The mechanism of this phenomenon is spin exchange between conduction-electron spins…
Magnetite (Fe3O4) based tunnel junctions with turret/mesa structure have been investigated for different barrier materials (SrTiO3, NdGaO3, MgO, SiO2, and Al2O(3-x)). Junctions with a Ni counter electrode and an aluminium oxide barrier…
Recent developments have introduced a groundbreaking form of collinear magnetism known as "altermagnetism". This emerging magnetic phase is characterized by robust time-reversal symmetry breaking, antiparallel magnetic order, and…
Altermagnetism is an emerging series of unconventional magnetic materials characterized by time-reversal symmetry breaking and spin-split bands in the momentum space with zero net magnetization. Metallic altermagnets offer unique advantages…
We propose spin transfer torque--magnetoresistive random access memory (STT-MRAM) based on magneto-resistance and spin transfer torque physics of band-pass spin filtering. Utilizing the electronic analogs of optical phenomena such as…
We investigate the impact of edge roughness on the electrical transport properties of magnetic tunnel junctions using non-equilibrium Greens function formalism. We have modeled edge roughness as a stochastic variation in the cross-sectional…
We present a quantum transport theory for generic magnetic metals, in which magnetism occurs predominantly due to exchange interactions, such as ferromagnets, antiferromagnets, altermagnets and p-wave magnets. Our theory is valid both for…
We develop a theory of angle-dependent magnetoresistance (ADMR) in metallic altermagnets coupled to ferromagnetic insulators and establish criteria that distinguish them from conventional compensated magnets with spin-orbit coupling. We…
The recently discovered altermagnets (AMs), hosting momentum-dependent spin splitting and vanishing net magnetization, have attracted intensive attention for their promising application in novel spintronics. However, limited by facility and…
We observe an unusual tunneling magnetoresistance (TMR) phenomenon in a composite of La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ with CoFe$_{2}$O$_{4}$ where the TMR versus applied magnetic field loop suggests a "negative coercive field". Tracing its…
We use spin-transfer-driven ferromagnetic resonance (ST-FMR) to measure the spin-transfer torque vector T in MgO-based magnetic tunnel junctions as a function of the offset angle between the magnetic moments of the electrodes and as a…
Alternative magnetic materials or ``altermagnets", characterized by their non-relativistic, momentum-dependent spin-split states, represent a cutting-edge advancement in the field of magnetism, offering promising avenues for spintronic…
We theoretically study the spin-dependent transport in a ferromagnet/super- conductor/ferromagnet double tunnel junction. The tunneling current in the antiferromagnetic alignment of the magnetizations gives rise to a spin imbalance in the…
In this paper, we attempt the theoretical modeling of the magnetic tunnel junctions with embedded magnetic and nonmagnetic nanoparticles (NPs). A few abnormal tunnel magnetoresistance (TMR) effects, observed in related experiments, can be…
Temperature dependence of the tunnel magnetoresistance (TMR) was calculated in range of the quantum-ballistic model in the magnetic tunnel junctions (MTJs) with embedded nanoparticles (NPs). The electron tunnel transport through NP was…
Altermagnets are a new class of magnetic materials characterized by fully compensated spins arranged in alternating local structures, allowing for spin-split bands similar to those found in ferromagnets without net magnetism. Recently, MnTe…