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相关论文: Pressure-Induced Mechanical Instabilities in Cubic…

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The structural and dynamic properties of silica melts under high pressure are studied using molecular dynamics (MD) computer simulation. The interactions between the ions are modeled by a pairwise-additive potential, the so-called CHIK…

无序系统与神经网络 · 物理学 2009-11-13 Juergen Horbach

Cubic Pm-3n Nb3Sn0.92 superconductor (Tc ~ 16 K) was found to exhibit tetragonal instabilities at the superconducting state (T = 10 K). These instabilities are manifested through the appearance of reflections which are forbidden in the…

超导电性 · 物理学 2021-07-07 V. Svitlyk , M. Mezouar

We report a room-temperature optical reflectivity study performed on [112]-oriented Cd$_3$As$_2$ single crystals over a broad energy range under external pressure up to 10 GPa. The abrupt drop of the band dispersion parameter…

材料科学 · 物理学 2018-05-23 E. Uykur , R. Sankar , D. Schmitz , C. A. Kuntscher

We present an experimental study of the superconducting properties of NiBi3 as a function of pressure by means of resistivity and magnetization measurements and combine our results with DFT calculations of the band structure under pressure.…

超导电性 · 物理学 2018-12-17 Elena Gati , Li Xiang , Lin-Lin Wang , Soham Manni , Paul C. Canfield , Sergey L. Bud'ko

Deep defects in silicon carbide (SiC) possess atom-like electronic, spin and optical properties, making them ideal for quantum-computing and -sensing applications. In these applications, deep defects are often placed within fabricated…

材料科学 · 物理学 2022-05-09 Tamanna Joshi , Pratibha Dev

Electronic structures of carbides with the rocksalt structure were calculated by full potential electronic codes solving the Kohn-Sham equation. Bonding characters were analyzed by constructing tight-binding Hamiltonian based on…

材料科学 · 物理学 2012-11-09 Wenxu Zhang , Zhida Song , Bin Peng , Wanli Zhang

High pressure electrical resistivity and x-ray diffraction experiments have been performed on Fe single crystals. The crystallographic investigation provides direct evidence that in the martensitic $bcc \rightarrow hcp$ transition at 14 GPa…

超导电性 · 物理学 2015-06-16 C. S. Yadav , G. Seyfarth , P. Pedrazzini , H. Wilhelm , R. Černý , D. Jaccard

We report simultaneous hydrostatic pressure studies on the critical temperature $T_c$ and on the pseudogap temperature $T^*$ performed through resistivity measurements on an optimally doped high-$T_c$ oxide…

The evolution of the superconducting transition temperature ($T_c$) in FeSe was investigated under in-plane, out-of-plane, and hydrostatic compression. For pressures up to 0.6 GPa, $T_c$ increases regardless of the compression mode,…

超导电性 · 物理学 2026-04-06 Alexy Bertrand , Masaki Mito , Kazuma Nakamura , Mahmoud Abdel-Hafiez

Silicon telluride (Si2Te3) is a two-dimensional semiconductor with unique structural properties due to the size contrast between Si and Te atoms. A recent experiment shows that the material turns metallic under hydrostatic pressure, while…

材料科学 · 物理学 2021-01-11 Romakanta Bhattarai , Xiao Shen

Silicon carbide (SiC), is an artificial semiconductor used for high-power transistors and blue LEDs, for its extraordinary properties. SiC would be attractive for more applications, but large-scale or large-surface area fabrication, with…

The mechanical response of amorphous silica (or silica glass) under hydrostatic compression for very high pressures up to 25 GPa is modelled via an elastic-plastic constitutive equation (continuum mechanics framework).The material…

We present first-principles calculations of metallic atomic hydrogen in the 400-600 GPa pressure range in a tetragonal structure with space group $I4_1/amd$, which is predicted to be its first atomic phase. Our calculations show a band…

超导电性 · 物理学 2016-06-01 Miguel Borinaga , Ion Errea , Matteo Calandra , Francesco Mauri , Aitor Bergara

The silicon vacancy is a prominent intrinsic defect of cubic SiC (3C-SiC) to which much effort has been devoted so far, experimentally and theoretically. We calculate its properties using the GW approximation that does not suffer from the…

材料科学 · 物理学 2015-05-20 Fabien Bruneval , Guido Roma

The extensive applications of cubic silicon in flexible transistors and infrared detectors are much hindered by its intrinsic properties. Metastable silicon phases, such as Si-III, IV and XII prepared using extreme pressure method, provide…

材料科学 · 物理学 2025-03-07 Yubing Du , Guoshuai Du , Zhixi Zhu , Jiaohui Yan , Jiayin Li , Tiansong Zhang , Lina Yang , Ke Jin , Yabin Chen

Despite intense experimental efforts, the nature of the unconventional superconducting order parameter of UTe$_2$ remains elusive. This puzzle stems from different reported numbers of superconducting transitions at ambient pressure, as well…

In this article, a brief introduction is first given on infrared studies of materials at high pressures using a diamond anvil cell. Then, our recent results of high-pressure infrared studies are described for Mg$_2$Si, InAs, and InSb. For…

Quantum triangular-lattice antiferromagnets are important prototype systems to investigate phenomena of the geometrical frustration in condensed matter. Apart from highly unusual magnetic properties, they possess a rich phase diagram…

强关联电子 · 物理学 2019-03-13 S. A. Zvyagin , D. Graf , T. Sakurai , S. Kimura , H. Nojiri , J. Wosnitza , H. Ohta , T. Ono , H. Tanaka

We investigate the effect of pressure on the electronic and magnetic states of CdV$_2$O$_4$ by using ab initio electronic structure calculations. The Coulomb correlation and spin-orbit coupling play important role in deciding the…

强关联电子 · 物理学 2012-08-06 Sudhir K. Pandey

The exploration of tunable superconductivity in strongly correlated electron systems is a central pursuit in condensed matter physics, with implications for both fundamental understanding and potential applications. The Laves phase…