相关论文: Toughening beta-Ga2O3 via mechanically seeded disl…
Dislocations in perovskite oxides have drawn increasing research interest due to their potential of tuning functional properties of electroceramics. Open questions remain regarding the behavior of dislocations concerning their stability…
For potentially wider applications of ceramics with dislocation-tuned mechanical and functional properties, it is pertinent to achieve dislocation engineering in polycrystalline ceramics. However, grain boundaries (GBs) in general are…
Dislocations in ductile ceramics offer the potential for robust mechanical performance while unlocking versatile functional properties. Previous studies have been limited by small volumes with dislocations and/or low dislocation densities…
Recent advancements in dislocation engineering are reshaping the traditional view towards ceramics being brittle. Here, we use KTaO3 (KTO), a perovskite oxide that is newly discovered with room-temperature bulk plasticity, and demonstrate…
We report room-temperature bulk plasticity mediated by dislocations in single-crystal cubic KTaO3, contrasting the conventional knowledge that single-crystal KTaO3 is susceptible to brittle cleavage. A mechanics-based combinatorial…
The quest for room-temperature ductile ceramics has been repeatedly fueled by hopes for large-scale applications but so far has been not successful. Recent demonstrations of enhanced functional properties in ceramics through judicious…
Nanoindentation is a convenient method to investigate the mechanical properties of materials on small scales by utilizing low loads and small indentation depths. However, the effect of grain boundaries (GB) on the nanoindentation response…
Dislocations in oxides with ionic/covalent bonding hold the potential of harnessing versatile functionalities. Here, high-density dislocations in a large plastic zone in potassium niobate (KNbO3) crystals are mechanically introduced by…
Dislocations in ceramics have recently gained renewed research interest, in contrast to the traditional belief that ceramics are inherently brittle. Understanding dislocation mechanics in representative oxides is beneficial for effective…
beta-Ga2O3 is a promising material for next-generation power electronics; however, its performance is strongly affected by lattice defects such as dislocations. In this study, we demonstrate three-dimensional (3D) visualization of…
Dislocation in (011)-oriented $\beta$-Ga$_2$O$_3$ substrates grown by the vertical Bridgman method was investigated using X-ray topography (XRT), combined with X-ray reticulography. Transmission XRT reveals dislocations lying on the (001)…
In-situ etching using Ga flux in an ultra-high vacuum environment like MBE is introduced as a method to make high aspect ratio 3 dimensional structures in $\beta$-Ga2O3. Etching of $\beta$-Ga2O3 due to excess Ga adatoms on the epilayer…
The ultrawide-bandgap semiconductor $\beta$-Ga2O3 holds exceptional promise for next-generation power electronics and deep-ultraviolet optoelectronics, yet its widespread application is hindered by the lack of cost-effective, high-quality…
This study presents a nondestructive, high-resolution method for three-dimensional imaging of threading dislocations in beta-$Ga_{2}O_{3}$ (010) using phase-contrast microscopy (PCM). A one-to-one correspondence between dislocation…
We provide a first-principles modeling of the beta-Ga2O3/3C-SiC interface that takes into account the reconstructions occurring at the 3C-SiC (001) surface by oxidation, aiming to mimic the actual deposition process under the best…
Ultrawide bandgap semiconductor $\beta$-Ga2O3 holds extensive potential for applications in high-radiation environments. One of the primary challenges in its practical application is unveiling the mechanisms of surface irradiation damage…
The presence of interfaces and grain boundaries significantly impacts the mechanical properties of materials, particularly when dealing with micro- or nano-scale samples. Distinct interactions between dislocations and grain boundaries can…
We account for lateral orderings of III-V nanostructures resulting from a GaAs/InAs/InGaAs/GaAs sequence grown on GaAs by metallorganic vapour phase epitaxy at two different temperatures. For both samples, the ordering is induced by the…
We introduce a deep-recessed gate architecture in $\beta$-Ga$_2$O$_3$ delta-doped field effect transistors for improvement in DC-RF dispersion and breakdown properties. The device design incorporates an unintentionally doped…
The nature of mechanically induced dislocations in SrTiO3 at low temperatures has been a disputed matter for a long time. Here we provide a systematic overview of the existing knowledge on dislocations in stoichiometric SrTiO3 complemented…