相关论文: Metallic Contact Contributions in Thermal Hall Con…
To develop next-generation electronics and high efficiency energy-harvesting devices, it is crucial to understand how charge and heat are transported at the nanoscale. Metallic atomic-size contacts are ideal systems to probe the quantum…
We present an experimental and theoretical study of the conductance and stability of Mg atomic-sized contacts. Using Mechanically Controllable Break Junctions (MCBJ), we have observed that the room temperature conductance histograms exhibit…
Metallic atomic junctions pose the ultimate limit to the scaling of electrical contacts. They serve as model systems to probe electrical and thermal transport down to the atomic level as well as quantum effects occurring in one-dimensional…
Although the electrical transport properties of mesoscopic metallic samples have been investigated extensively over the past two decades, the thermal properties have received far less attention. This may be due in part to the difficulty of…
The thermopower and conductance of atomic-size metallic contacts have been simultaneously measured using a mechanically controllable break junction. For contacts approaching atomic dimensions, abrupt steps in the thermopower are observed…
We propose and demonstrate a quantitative noncontact measurement method for the thermal Hall effect (THE) based on magnetic-field-modulated lock-in thermography. This method enables visualization of THE-induced temperature change and…
Fabrication, characterization and comparison of gold and graphene micro- and nano-size Hall sensors for room temperature scanning magnetic field microscopy applications is presented. The Hall sensors with active areas from 5 $\mu$m down to…
Using the strong temperature dependent resistance of a normal metal wire in proximity to a superconductor, we have been able to measure the local temperature of electrons heated by flowing a dc current in a metallic wire to within a few…
It is pointed out that in ferromagnetic metals a contribution to the Hall voltage arises when a non-zero spin current exists, which is generally the case in the presence of a charge current. This contribution is independent of any…
The anomalous Hall effect in a multiband tight-binding model is numerically studied taking into account both elastic scattering by disorder and inelastic scattering by the electron-phonon interaction. The Hall conductivity is obtained as a…
The phonon thermal Hall effect (THE) is a ubiquitous yet poorly understood phenomenon in insulators. Its microscopic origin remains debated, partly due to significant sample-dependent variations that hint at uncontrolled experimental…
Recent advances in bottom-up growth are giving rise to a range of new two-dimensional nanostructures. Hall effect measurements play an important role in their electrical characterization. However, size constraints can lead to device…
We report magnetoresistance measurements over an extensive temperature range (0.1 K $\leq T \leq$ 100 K) in a disordered ferromagnetic semiconductor (\gma). The study focuses on a series of metallic \gma~ epilayers that lie in the vicinity…
Estimation of thermal contact resistances between cylinders can be achieved using heating on the cross sections by a laser spot and measurement of the temperature response by IR thermography. This type of measurement makes it possible to…
The impact of surface roughness on conductive heat transfer across nanoscale contacts is investigated by means of scanning thermal microscopy. Silicon surfaces with out-of-plane rms roughness of ~0, 0.5, 4, 7 and 11 nm are scanned both…
Heat transfer at the interface between two materials is becoming increasingly important as the size of electronic devices shrinks. Most studies concentrate on the interfacial thermal conductance between either crystalline-crystalline or…
Special relativity predicts a very small influence of temperature on mass of around ${\Delta}m/m{\approx}10^{-14}$. More than 100 years ago, experiments were performed that revealed a limit of $<10^{-8}$ for changes of a few degree at room…
In bulk semiconductor materials, the insulator-metal transition (IMT) is governed by the concentration of conduction electrons. Meanwhile, even when fabricated from metallic building blocks, nanocrystal films are often insulating with…
We report the observation of TEMPERATURE-INDUCED transitions between insulator, metal, and quantum-Hall behaviors for transport coefficients in the very dilute high mobility two-dimensional electron system in silicon. We consider the…
An exact formula for the temperature dependent Hall number of metals is derived. It is valid for non-relativistic fermions or bosons, with arbitrary potential and interaction. This DC transport coefficient is proven to (remarkably) depend…