相关论文: Mapping diverse hysteresis dynamics in scaled MoS$…
We propose a semi-suspended device structure and construct nanogapped, hysteresis-free field-effect transistors (FETs), based on the van der Waals stacking technique. The structure, which features a semi-suspended channel above a…
Randomization of the trap state of defects present at the gate Si-SiO$_2$ interface of MOSFET is responsible for the low-frequency noise phenomena such as Random Telegraph Signal (RTS), burst, and 1/\textit{f} noise. In a previous work,…
Fault diagnosis in multimode processes plays a critical role in ensuring the safe operation of industrial systems across multiple modes. It faces a great challenge yet to be addressed - that is, the significant distributional differences…
As silicon transistors scale toward future technology nodes, three-dimensional architectures -- including gate-all-around (GAA) nanoribbon and complementary field-effect transistors (CFETs) -- require channel widths in the tens of…
Monolithic realization of metallic 1T and semiconducting 2H polymorphic phases makes MoS2 a potential candidate for future microelectronic circuits. Though co-existence of these phases has been reported, a method for engineering a stable 1T…
InAs/GaSb and similar materials systems have generated great interest as a heterojunction for tunnel field effect transistors (TFETs) due to favorable band alignment. However, little is currently understood about how such TFETs are affected…
Flexible electronics is an emerging field in many applications ranging from in vivo biomedical devices to wearable smart systems. The capability of conforming to curved surfaces opens the door to add electronic components to miniaturized…
The moving average (MA)-type scheme, also known as the smoothing method, has been well established within the multivariate statistical process monitoring (MSPM) framework since the 1990s. However, its theoretical basis is still limited to…
Magnetic Resonance Fingerprinting (MRF) is an efficient quantitative MRI technique that can extract important tissue and system parameters such as T1, T2, B0, and B1 from a single scan. This property also makes it attractive for…
Gas sensors built using two-dimensional (2D) MoS2 have conventionally relied on a change in field-effect-transistor (FET) channel resistance or a change in Schottky contact/pn homojunction barrier. This report demonstrates, for the first…
The intrinsic spin-dependent transport properties of two types of lateral VS2|MoS2 heterojunctions are systematically investigated using first-principles calculations, and their various nanodevices with novel properties are designed. The…
We report the performance of field-effect transistors (FETs), comprised of mono-layer of recently synthesized layered two-dimensional MoSi2N_4 as channel material, using the first principles quantum transport simulations. The devices'…
Fabrication process-induced performance variability remains a formidable barrier in the high-volume manufacturing of semiconductor chips. With skyrocketing Artificial Intelligence (AI) workload, demand for non-volatile and computational…
Multi-modal magnetic resonance imaging (MRI) plays a crucial role in comprehensive disease diagnosis in clinical medicine. However, acquiring certain modalities, such as T2-weighted images (T2WIs), is time-consuming and prone to be with…
Scale interaction is studied in wall-bounded turbulence by focusing on the frequency modulation (FM) mechanism of large scales on small scale velocity fluctuations. Differently from amplitude modulation analysis, frequency modulation has…
Early fault detection (EFD) of rotating machines is important to decrease the maintenance cost and improve the mechanical system stability. One of the key points of EFD is developing a generic model to extract robust and discriminative…
A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that…
In full-scale forced vibration tests, the demand often arises to capture high-spatial-resolution mode shapes with limited number of sensors and shakers. Multi-setup experimental modal analysis (EMA) addresses this challenge by roving…
Estimation of threshold voltage V T variability for NWFETs has been compu- tationally expensive due to lack of analytical models. Variability estimation of NWFET is essential to design the next generation logic circuits. Compared to any…
A theoretical foundation is developed for active seismic reconstruction of fractures endowed with spatially-varying interfacial condition (e.g.~partially-closed fractures, hydraulic fractures). The proposed indicator functional carries a…