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Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface, however nearby surface…

We show that Heisenberg exchange interactions between the neighboring spins comprising an ensemble spin qubit (E-qubit) can act as an intrinsic error mitigator, increasing gate fidelity even at high temperatures. As an example, the fidelity…

介观与纳米尺度物理 · 物理学 2025-03-18 Aniruddha Chakraborty , Md. Fahim F. Chowdhury , Mohamad Niknam , Louis S. Bouchard , Jayasimha Atulasimha

Hole spin qubits in Ge, investigated for all-electrical spin manipulation because of its large spin-orbit coupling, are exposed to charge noise leading to decoherence. Here we construct a model of $1/f$ noise from individual fluctuators and…

介观与纳米尺度物理 · 物理学 2025-04-09 Zhanning Wang , Sina Gholizadeh , Xuedong Hu , S. Das Sarma , Dimitrie Culcer

We present a device-level design study for a two-qubit module based on phonon-coupled germanium (Ge) hole-spin qubits targeted for operation at $1$--$4~\mathrm{K}$. Building on prior theoretical modeling of phonon-engineered Ge qubits and…

介观与纳米尺度物理 · 物理学 2026-05-07 D. -M. Mei , S. A. Panamaldeniya , K. -M. Dong , S. Bhattarai , A. Prem

Quasi-one-dimensional hole gas is achievable in a semiconductor Ge nanowire. The lowest two subband dispersions of the hole gas are just two shifted parabolic curves with an anticrossing at $k_{z}=0$. This peculiar low-energy subband…

介观与纳米尺度物理 · 物理学 2025-05-21 Rui Li

The strong atomistic spin orbit coupling of holes makes single-shot spin readout measurements difficult because it reduces the spin lifetimes. By integrating the charge sensor into a high bandwidth radio-frequency reflectometry setup we…

介观与纳米尺度物理 · 物理学 2018-12-05 Lada Vukušić , Josip Kukučka , Hannes Watzinger , Joshua M. Milem , Friedrich Schäffler , Georgios Katsaros

Spin qubits have emerged as a leading platform for quantum information processing due to their long coherence times, small footprint, and compatibility with the existing semiconductor industry. We first provide an introduction to the…

量子物理 · 物理学 2026-04-16 Z. M. McIntyre , Abhikbrata Sarkar , Daniel Loss

Spin-orbit torque facilitates efficient magnetization switching via an in-plane current in perpendicularly magnetized heavy metal/ferromagnet heterostructures. The efficiency of spin-orbit-torque-induced switching is determined by the…

The co-integration of spin, superconducting, and topological systems is emerging as an exciting pathway for scalable and high-fidelity quantum information technology. High-mobility planar germanium is a front-runner semiconductor for…

Optimal working points or "sweet spots" have arisen as an important tool for mitigating charge noise in quantum dot logical spin qubits. The exchange-only qubit provides an ideal system for studying this effect because $Z$ rotations are…

介观与纳米尺度物理 · 物理学 2015-08-25 Jianjia Fei , Jo-Tzu Hung , Teck Seng Koh , Yun-Pil Shim , S. N. Coppersmith , Xuedong Hu , Mark Friesen

We consider a model for the two-dimensional electron gas formed at the interface of oxide heterostructures, which includes a Rashba spin-orbit coupling proportional to the electric field perpendicular to the interface. Based on the standard…

超导电性 · 物理学 2012-11-13 S. Caprara , F. Peronaci , M. Grilli

The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devices, a feat achievable through a scalable (Bi)CMOS…

We present a flexible microscopic modeling framework for flopping-mode spin qubits that captures the spatial structure of the double-well confinement and magnetic-field-gradient profile beyond conventional low-energy approximations. Our…

介观与纳米尺度物理 · 物理学 2026-05-12 Ashutosh Kinikar , Vukan Levajac , Kristof Moors , George Simion , Monica Benito , Bart Soree

Silicon spin qubits in gate-defined quantum dots leverage established semiconductor infrastructure and offer a scalable path toward transformative quantum technologies. Holes spins in silicon offer compact all-electrical control, whilst…

In self assembled III-V semiconductor quantum dots, valence holes have longer spin coherence times than the conduction electrons, due to their weaker coupling to nuclear spin bath fluctuations. Prolonging hole spin stability relies on a…

介观与纳米尺度物理 · 物理学 2016-09-14 M. Vidal , M. V. Durnev , L. Bouet , T. Amand , M. M. Glazov , E. L. Ivchenko , P. Zhou , G. Wang , T. Mano , T. Kuroda , X. Marie , K. Sakoda , B. Urbaszek

Spin-orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-chip, nanofabricated micromagnets or nearby coplanar…

介观与纳米尺度物理 · 物理学 2022-02-04 Ryan M. Jock , N. Tobias Jacobson , Martin Rudolph , Daniel R. Ward , Malcolm S. Carroll , Dwight R. Luhman

Silicon spin qubits are promising candidates for building scalable quantum computers due to their nanometre scale features. However, delivering microwave control signals locally to each qubit poses a challenge and instead methods that…

量子物理 · 物理学 2025-10-21 Hamza Jnane , Adam Siegel , M. Fernando Gonzalez-Zalba

As devices to control spin currents using the spin-orbit interaction are proposed and implemented, it is important to understand the fluctuations that spin-orbit coupling can impose on transmission through a quantum dot. Using random matrix…

介观与纳米尺度物理 · 物理学 2015-05-14 Jacob J. Krich

Semiconductor spin qubits have gained increasing attention as a possible platform to host a fault-tolerant quantum computer. First demonstrations of spin qubit arrays have been shown in a wide variety of semiconductor materials. The highest…

Spin-$\frac{1}{2}$ $^{119}$Sn nuclei in a silicon semiconductor could make excellent qubits. Nuclear spins in silicon are known to have long coherence times. Tin is isoelectronic with silicon, so we expect electrons can easily shuttle from…

量子物理 · 物理学 2022-06-14 Wayne M. Witzel , Jesse J. Lutz , Dwight R. Luhman
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