相关论文: Absorbance marker: Detection of quantum geometry a…
We elaborate that many non-excitonic dielectric and optical properties of semiconductors and insulators caused by interband absorption are originated from quantum geometry, including charge susceptibility, relative dielectric constant,…
The spread of valence band Wannier functions in semiconductors and insulators is a characteristic property that gives a rough estimation of how insulating is the material. We elaborate that the gauge-invariant part of the spread can be…
Through systematic experimental and theoretical studies of layer-thickness-dependent absorption in semiconducting MoSe$_2$ and WS$_2$ across the visible to near-infrared spectral range, we demonstrate a universal absorption behavior in…
The presence of disorder in semiconductors can dramatically change their physical properties. Yet, models faithfully accounting for it are still scarce and computationally inefficient. We present a mathematical and computational model able…
The effects of chemical disorder on the electronic and optical properties of semiconductor alloy multilayers are studied based on the tight-binding theory and single-site coherent potential approximation. Due to the quantum confinement of…
Doping of a two-dimensional (2D) material by impurity atoms occurs \textit{via} two distinct mechanisms: absorption of the dopants by the 2D crystal or adsorption on its surface. To distinguish the relevant mechanism, we systematically dope…
Atomic-scale control of light-matter interactions represent the ultimate frontier for many applications in photonics and quantum technology. Two-dimensional semiconductors, including transition metal dichalcogenides, are a promising…
In 2D semiconductors and insulators, the Chern number of the valence band Bloch state is an important quantity that has been linked to various material properties, such as the topological order. We elaborate that the opacity of 2D materials…
Atomically thin two-dimensional (2D) semiconductors are extensively investigated for opto-electronic applications that require strong light-matter interactions. In view of such applications, it is essential to understand how…
Motivated by recent advances on local conductance measurement techniques at the nanoscale, timely questions are being raised about what possible information can be extracted from a disordered graphene sheet by selectively interrogating its…
Even the best quality 2D materials have non-negligible concentrations of vacancies and impurities. It is critical to understand and quantify how defects change intrinsic properties, and use this knowledge to generate functionality. This…
Despite the decades that have passed since the discovery of ultrafast transient absorption spectroscopy and its apparent simplicity, this method is still often subject to experimental errors and misinterpretations when applied to 2D…
We study the optical properties of gapped two-dimensional materials which are subject to the quantum anomalous Hall effect. At sufficiently low temperatures the transmission, reflection and absorption coefficients are found to have a…
The transport properties of disordered systems are known to depend critically on dimensionality. We study the diffusion coefficient of a quantum particle confined to a lattice on the surface of a tube, where it scales between the 1D and 2D…
Broadband absorption in the visible spectrum is essential in optoelectronic applications that involve power conversion such as photovoltaics and photocatalysis. Most ultrathin broadband absorbers use parasitic plasmonic structures that…
We introduce a nanomechanical platform for fast and sensitive measurements of the spectrally-resolved optical dielectric function of 2D materials. At the heart of our approach is a suspended 2D material integrated into a nanomechanical…
Inspired by the duality picture between superconductivity and insulator in two spatial dimension, we conjecture that the order parameter, suitable for characterizing 2D fermionic insulating state, is the disorder operator, usually known in…
Photonic band structure of metal-dielectric and semiconductor-dielectric layered structures are studied in the presence of a strong absorption. It is shown that absorption can enlarge some gaps by as much as 50%.
We measure the absolute absorption cross section of molecules using a matter-wave interferometer. A nanostructured density distribution is imprinted onto a dilute molecular beam through quantum interference. As the beam crosses the light…
2D materials are considered a key element in the development of next-generation electronics (nanoelectronics) due to their extreme thickness in the nanometer range and unique physical properties. The ultrafast dynamics of photoexcited…