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A graphene-optimized silicon carbide PIN detector was fabricated and its radiation tolerance under X-ray irradiation of 160 keV was evaluated. Its electrical properties, charge collection performance and time resolution of beta-particles…
A novel graphene-optimized silicon carbide PIN detector was fabricated. Its electrical properties, charge collection performance and signal rise time were evaluated under non-irradiated conditions and under X-ray irradiation with an energy…
Silicon carbide detectors exhibit good detection performance such as fast time resolution, high radiation tolerances, high breakdown voltage and low temperature sensitivity and have been studied for detection applications. Meanwhile,…
A silicon carbide PIN detector was fabricated and its radiation tolerance under Ta heavy ion irradiation of 2370 MeV was evaluated. Its electrical properties, charge collection performance and time resolution of $\beta$-particles…
The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier…
This study evaluates the radiation tolerance of a 4H-SiC PIN detector under X-ray irradiation up to \SI{2}{MGy} (Si) at \SI{160}{keV}. The detector features a fully epitaxial vertical PIN structure with mesa terminations and field plates.…
Due to the increased commercial availability, wide-bandgap semiconductors and their radiation hardness have recently received increased interest from the particle physics community. 4H-Silicon Carbide (SiC), especially, is an attractive…
In the field of high-energy particle detection, detectors operating in high-radiation environments primarily face high costs associated with power consumption and cooling systems. Therefore, the development of particle detectors capable of…
The Ion Beam Induced Charge Collection (IBIC) technique was used to map the charge collection efficiency (CCE) of a 4H-SiC photodetector with coplanar interdigitated Schottky barrier electrodes and a common ohmic contact on the back side.…
Silicon photonics with the advantages of low power consumption, low cost, and high yield is a crucial technology for facilitating high-capacity optical communications and interconnects. The graphene photodetectors (GPDs) featuring broadband…
The 4H-SiC material exhibits good detection performance, but there are still many problems like signal distortion and poor signal quality. The 4H-SiC low gain avalanche detector (LGAD) has been fabricated for the first time to solve these…
A fast silicon-graphene hybrid plasmonic waveguide photodetectors beyond 1.55 {\mu}m is proposed and realized by introducing an ultra-thin wide silicon-on-insulator ridge core region with a narrow metal cap. With this novel design, the…
During the scheduled high luminosity upgrade of LHC, the world's largest particle physics accelerator at CERN, the position sensitive silicon detectors installed in the vertex and tracking part of the CMS experiment will face more intense…
The challenge of next generation datacom and telecom communication is to increase the available bandwidth while reducing the size, cost and power consumption of photonic integrated circuits. Silicon (Si) photonics has emerged as a viable…
Graphene has emerged as an ultrafast optoelectronic material for on-chip photodetector applications. The 2D nature of graphene enables its facile integration with complementary metal-oxide semiconductor (CMOS) microelectronics and silicon…
In ion cancer therapy, high-intensity ion beams are used to treat tumors by taking advantage of the Bragg-Peak. Typical ion therapy centers use particle rates up to $10^{10}$ ions/second for treatment. On the other hand, such intensities…
Electronic devices using epitaxial graphene on Silicon Carbide require encapsulation to avoid uncontrolled doping by impurities deposited in ambient conditions. Additionally, interaction of the graphene monolayer with the substrate causes…
Silicon carbide (SiC) particle detectors have the potential to provide time resolutions and robust performance in extreme environments which exceed that of silicon detectors. In this work 4H-SiC low gain avalanche detectors (LGADs) and…
Silicon-based fast time detectors have been widely used in high energy physics, nuclear physics, space exploration and other fields in recent years. However, silicon detectors often require complex low-temperature systems when operating in…
In order to increase the response speed of the InSe-based photodetector with high photoresponsivity, graphene is used as the transparent electrodes to modify the difference of the work function between the electrodes and the InSe. As…