相关论文: Current-induced spin and orbital polarization in t…
The ability to engineer new states of matter and to control their electronic and spintronic properties by electric fields is at the heart of the modern information technology and driving force behind recent advances in van der Waals (vdW)…
We analyze the experimentally obtained spin-current-related magnetoresistance in epitaxial Pt/Co bilayers by using a drift-diffusion model that incorporates both bulk spin Hall effect and interfacial Rashba-Edelstein effect (REE). The…
Spintronic logic devices require efficient spin-charge interconversion: converting charge current to spin current and spin current to charge current. In spin-orbit materials that are regarded as the most promising candidate for spintronic…
Orbital effects, despite their fundamental significance and potential to engender novel physical phenomena and enable new applications, have long been underexplored compared to their spin counterparts. Recently, surging interest in the…
In systems with time-reversal symmetry, the orbital magnetization is zero in equilibrium. Recently, it has been proposed that the orbital magnetization can be induced by an electric current in a helical crystal structure in the same manner…
Semimetallic tungsten ditelluride (WTe2) displays an extremely large non-saturating magnetoresistance (XMR), which is the subject of intense interest. This phenomenon is thought to arise from the combination of perfect n-p charge…
Recently large Rashba-like spin splitting has been observed in certain bulk ferroelectrics. In contrast with the relativistic Rashba effect, the chiral spin texture and large spin-splitting of the electronic bands depend strongly on the…
Spin-orbit interactions in two-dimensional electron liquids are responsible for many interesting transport phenomena in which particle currents are converted to spin polarizations and spin currents and viceversa. Prime examples are the spin…
The electrical manipulation of magnetization by current-induced spin torques has given access to realize a plethora of ultralow power and fast spintronic devices such as non-volatile magnetic memories, spin-torque nano-oscillators, and…
We theoretically study magnetoelectric effects in a heterostructure of a generic band insulator and a ferromagnet. In contrast to the kinetic magnetoelectric effect in metals, referred to as the Edelstein effect or the inverse spin galvanic…
Studies of structure-property relationships in spintronics are essential for the design of materials that can fill specific roles in devices. For example, materials with low symmetry allow unconventional configurations of charge-to-spin…
Rashba materials have appeared as an ideal playground for spin-to-charge conversion in prototype spintronics devices. Among them, $\alpha$-GeTe(111) is a non-centrosymmetric ferroelectric (FE) semiconductor for which a strong spin-orbit…
The optical control of spin- and valley-selective gapless states in two-dimensional materials presents new opportunities for next-generation spintronic and valleytronic technologies. In this work, we study monolayer jacutingaite…
In this paper we present spin-to-charge current conversion properties in the Weyl semimetal TaP by means of the inverse Rashba-Edelstein effect (IREE) with the integration of this quantum material with the ferromagnetic metal Permalloy…
We theoretically study current-induced orbital magnetization in a chiral crystal. This phenomenon is an orbital version of the Edelstein effect. We propose an analogy between the current-induced orbital magnetization and an Amp\`ere field…
A simple model of magnetization dynamics in a ferromagnet/doped semiconductor hybrid structure with Rashba spin-orbit interaction (SOI) driven by an applied pulse of the electric field is proposed. The electric current excited by the…
Edelstein and spin Hall effect response functions for a two-dimensional (2D) system of pseudospin-1 particles is investigated. These two response functions denoted by $ \sigma_{SH} $ and $ \sigma_{EE} $ have been analyzed in a pseudospin-1…
Topological insulators are quantum materials involving Time-reversal protected surface states(TSS) making them appealing candidates for the design of next generation of highly efficient spintronic devices. The very recent observation of…
The current-induced spin polarization and momentum-dependent spin-orbit field were measured in In$_{x}$Ga$_{1-x}$As epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and…
Current-induced spin-orbit torque (SOT) is regarded as a promising mechanism for driving neuromorphic behavior in spin-orbitronic devices. In principle, the strong SOT in heavy metal-based magnetic heterostructure is attributed to the…