相关论文: Spin valve effect in junctions with a single ferro…

Superconducting spintronics in hybrid superconductor/ferromagnet (S-F) heterostructures provides an exciting potential new class of device. The prototypical super-spintronic device is the superconducting spin-valve, where the critical…

The integration of the spin degree of freedom in charge-based electronic devices has revolutionised both sensing and memory capability in microelectronics. Further development in spintronic devices requires electrical manipulation of spin…

We study spin switching effects in finite-size superconducting multivalve structures. We examine $\rm F_1F_2SF_3$ and $\rm F_1F_2SF_3F_4$ hybrids where a singlet superconductor ($\rm S$) layer is sandwiched among ferromagnet ($\rm F$)…

Joint influence of two effects, namely, nonequilibrium spin injection by current, and current induced surface torque, on spin-valve type ferromagnetic metallic junctions is considered theoretically. The CPP configuration is assumed. The…

Electrical spin injection from ferromagnetic metals into graphene is hindered by the impedance mismatch between the two materials. This problem can be reduced by the introduction of a thin tunnel barrier at the interface. We present room…

We study electron transport in monolayer molybdenum disulfide MoS$_2$ subjected to a magnetic barrier. Our analysis employs a full-band continuum model to capture the relevant physical phenomena. We focus on how electron energy, magnetic…

Understanding magnetoelectric coupling in emerging van der Waals multiferroics is crucial for developing atomically thin spintronic devices. Here, we present a comprehensive first-principles investigation of magnetoelectric coupling in…

We study the electron and spin transport in a van der Waals system formed by one layer with strong spin-orbit coupling and a second layer without spin-orbit coupling, in the regime when the interlayer tunneling is random. We find that in…

We consider the separate spin channel contributions to the charge conductance in superconducting/ferromagnetic spin valve $F_1/N/F_2/S$ structures. We find that the up- and down-spin conductance contributions may have a very different…

Manipulating quantum state via electrostatic gating has been intriguing for many model systems in nanoelectronics. When it comes to the question of controlling the electron spins, more specifically, the magnetism of a system, tuning with…

When charge current passes through a normal metal that exhibits spin Hall effect, spin accumulates at the edge of the sample in the transverse direction. We predict that this spin accumulation, or spin voltage, enables quantum tunneling of…

Magnetic tunnel junctions with a ferrimagnetic barrier layer have been studied to understand the role of the barrier layer in the tunneling process - a factor that has been largely overlooked until recently. Epitaxial oxide junctions of…

Graphene has remarkable opportunities for spintronics due to its high mobility and long spin diffusion length, especially when encapsulated in hexagonal boron nitride (h-BN). Here, for the first time, we demonstrate gate-tunable spin…

We consider the superconducting pairing induced by spin waves exchange in a ferromagnet with both conduction and localized electrons, the latter being described as spins. We use the microscopic Eliashberg theory to describe the pairing of…

We explore theoretically the spin transport in nanostructures consisting of a gold quantum dot bridging nonmagnetic electrodes and two Mn12-Ph single molecule magnets (SMMs) that are thiol-bonded to the dot but are not in direct contact…

We have studied the proximity-induced superconducting triplet pairing in CoO$_x$/Py1/Cu/Py2/Cu/Pb spin-valve structure (where Py = Ni$_{0.81}$Fe$_{0.19}$). By optimizing the parameters of this structure we found a triplet channel assisted…

We demonstrate experimentally the electrical ballistic electron spin injection from a ferromagnetic metal / tunnel barrier contact into a semiconductor III-V heterostructure. We introduce the Oblique Hanle Effect technique for reliable…

Tunneling Magnetoresistance between two ferrromagnets is an issue of fundamental importance in spintronics. In this work, we show that tunneling magnetoresistance can also emerge in junctions composed of ferromagnets and time-reversal…

Spintronics has become a broad and important research field that intersects with magnetism, nano-electronics, and materials science. Its overarching aim is to provide a fundamental understanding of spin-dependent phenomena in solid-state…

Thermoelectric effects in magnetic nanostructures and the so-called spin caloritronics are attracting much interest. Indeed it provides a new way to control and manipulate spin currents which are key elements of spin-based electronics. Here…